Fairchild Semiconductor FDW2501N Datasheet
FDW2501N
FDW2501N
Dual N-Channel 2.5V Specified PowerTrench MOSFET
May 2000
PRELIMINARY
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
Applications
• Load switch
• Motor drive
• DC/DC conversion
• Power management
Absolute Maximum Ratings T
=25oC unless otherwise noted
A
Features
• 6 A, 20 V. R
R
• Extended V
• High performance trench technology for extremely
low R
• Low profile TSSOP-8 package
GSS
DS(ON)
1
2
3
4
= 0.018 Ω @ VGS = 4.5V
DS(ON)
= 0.028 Ω @ VGS = 2.5V
DS(ON)
range (±12V) for battery applications.
8
7
6
5
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D Drain Current – Continuous (Note 1a) 6 A
P
D
TJ, T
STG
Drain-Source Voltage 20 V
Gate-Source Voltage
– Pulsed 30
Power Dissipation (Note 1a) 1.0 W
(Note 1b)
Operating and Storage Junction Temperature Range -55 to +150
±12
0.6
V
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 125
(Note 1b)
208
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
2501N FDW2501N 13’’ 12mm 3000 units
2000 Fairchild Semiconductor Corporation
°C/W
FDW2501N Rev C1(W)
Electrical Characteristics T
FDW2501N
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BVDSS
∆T
I
DSS
I
GSSF
I
GSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C 14 mV/°C
20 V
Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1
Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V –100 nA
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain–Source
On–Resistance
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 4.5 V, ID = 6.0 A
VGS = 2.5 V, ID = 4.7 A
V
= 4.5 V, ID = 6.0A, TJ=125°C
GS
0.4 1.0 1.5 V
-3.5 mV/°C
0.015
0.022
0.021
On–State Drain Current VGS = 4.5 V, VDS = 5 V 30 A
Forward Transconductance VDS = 5 V, ID = 6.0 A 28 S
0.018
0.028
0.029
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 1276 pF
Output Capacitance 558 pF
Reverse Transfer Capacitance
VDS = 10 V, V
f = 1.0 MHz
= 0 V,
GS
187 pF
Switching Characteristics (Note 2)
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
g
gs
gd
Turn–On Delay Time 10 20 ns
Turn–On Rise Time 20 40 ns
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, R
GEN
= 6 Ω
Turn–Off Delay Time 31 60 ns
Turn–Off Fall Time
Total Gate Charge 13.3 19 nC
Gate–Source Charge 3.0 nC
VDS = 10 V, ID = 6.0 A,
VGS = 4.5 V
Gate–Drain Charge
16 30 ns
3.8 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
θJA
the drain pins. R
a) R
b) R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Maximum Continuous Drain–Source Diode Forward Current 0.83 A
Drain–Source Diode Forward
VGS = 0 V, IS = 0.83 A (Note 2) 0.7 1.2 V
Voltage
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
θJA
is guaranteed by design while R
θJC
is 125°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
is 208°C/W (steady state) when mounted on a minimum copper pad on FR-4.
is determined by the user's board design.
θCA
µA
Ω
FDW2501N Rev C1(W)
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