Fairchild Semiconductor FDV303N Datasheet
August 1997
FDV303N
Digital FET, N-Channel
General Description Features
These N-Channel enhancement mode field effect transistors are
produced using Fairchild's proprietary, high cell density, DMOS
technology. This very high density process is tailored to minimize
on-state resistance at low gate drive conditions. This device is
designed especially for application in battery circuits using either
one lithium or three cadmium or NMH cells. It can be used as an
inverter or for high-efficiency miniature discrete DC/DC
conversion in compact portable electronic devices like cellular
phones and pagers. This device has excellent on-state
resistance even at gate drive voltages as low as 2.5 volts.
SOT-23
Mark:303
SuperSOTTM-6
SuperSOTTM-8
25 V, 0.68 A continuous, 2 A Peak.
R
R
= 0.45 Ω @ V
DS(ON)
= 0.6 Ω @ VGS= 2.7 V.
DS(ON)
= 4.5 V
GS
Very low level gate drive requirements allowing direct
operation in 3V circuits. V
GS(th)
< 1.5V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
Compact industry standard SOT-23 surface mount
package.
Alternative to TN0200T and TN0201T.
SO-8
SOT-223
SOIC-16
D
S
Absolute Maximum Ratings T
G
= 25oC unless other wise noted
A
Symbol Parameter FDV303N Units
V
DSS
V
GSS
I
D
Drain-Source Voltage, Power Supply Voltage 25 V
Gate-Source Voltage, V
IN
8 V
Drain/Output Current - Continuous 0.68 A
- Pulsed 2
P
D
TJ,T
ESD Electrostatic Discharge Rating MIL-STD-883D
Maximum Power Dissipation 0.35 W
Operating and Storage Temperature Range -55 to 150 °C
STG
6.0 kV
Human Body Model (100pf / 1500 Ohm)
THERMAL CHARACTERISTICS
R
JA
θ
Thermal Resistance, Junction-to-Ambient 357 °C/W
© 1997 Fairchild Semiconductor Corporation
FDV303N Rev.D1
Electrical Characteristics (T
= 25 OC unless otherwise noted )
A
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BV
∆BV
I
DSS
I
GSS
DSS
DSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 25 V
Breakdown Voltage Temp. Coefficient
/∆T
J
Zero Gate Voltage Drain Current
ID = 250 µA, Referenced to 25 o C
VDS = 20 V, V
GS
= 0 V
26
1 µA
TJ = 55°C
Gate - Body Leakage Current VGS = 8 V, VDS= 0 V 100 nA
mV / oC
10 µA
ON CHARACTERISTICS (Note)
∆V
V
R
GS(th)
DS(ON)
GS(th)
Gate Threshold Voltage Temp. Coefficient
/∆T
J
Gate Threshold Voltage
ID = 250 µA, Referenced to 25 o C
VDS = VGS, ID = 250 µA
Static Drain-Source On-Resistance VGS = 4.5 V, ID = 0.5 A 0.33 0.45
TJ =125°C
-2.6
mV / oC
0.65 0.8 1.5 V
0.52 0.8
VGS = 2.7 V, ID = 0.2 A 0.44 0.6
I
g
D(ON)
FS
On-State Drain Current
VGS = 2.7 V, VDS = 5 V
Forward Transconductance VDS = 5 V, ID= 0.5 A 1.45 S
0.5 A
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 28 pF
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
Reverse Transfer Capacitance 9 pF
50 pF
SWITCHING CHARACTERISTICS (Note)
t
t
t
t
Q
Q
Q
D(on)
r
D(off)
f
g
gs
gd
Turn - On Delay Time VDD = 6 V, ID = 0.5 A,
Turn - On Rise Time 8.5 18 ns
VGS = 4.5 V, R
GEN
= 50 Ω
3 6 ns
Turn - Off Delay Time 17 30 ns
Turn - Off Fall Time 13 25 ns
Total Gate Charge VDS = 5 V, ID = 0.5 A,
Gate-Source Charge 0.38 nC
VGS = 4.5 V
1.64 2.3 nC
Gate-Drain Charge 0.45 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Note:
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
Maximum Continuous Drain-Source Diode Forward Current 0.3 A
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 0.5 A (Note)
0.83 1.2 V
Ω
FDV303N Rev.D1
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