Fairchild Semiconductor FDV301N Datasheet
March 1999
FDV301N
Digital FET , N-Channel
General Description Features
This N-Channel logic level enhancement mode field effect
transistor is produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance. This
device has been designed especially for low voltage
applications as a replacement for digital transistors. Since
bias resistors are not required, this one N-channel FET can
replace several different digital transistors, with different bias
resistor values.
SOT-23
Mark:301
SuperSOTTM-6
SuperSOTTM-8
G
25 V, 0.22 A continuous, 0.5 A Peak.
R
= 5 Ω @ VGS= 2.7 V
R
DS(ON)
= 4 Ω @ VGS= 4.5 V.
DS(ON)
Very low level gate drive requirements allowing direct
operation in 3V circuits. V
GS(th)
< 1.5V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
Replace multiple NPN digital transistors with one DMOS
FET.
SO-8
D
S
SOT-223
INVERTER APPLICATION
IN
SOIC-16
Vcc
D
OUT
SG
GND
Absolute Maximum Ratings T
= 25oC unless other wise noted
A
Symbol Parameter FDV301N Units
V
, VCCDrain-Source Voltage, Power Supply Voltage 25 V
DSS
V
, VIGate-Source Voltage, V
GSS
ID, I
Drain/Output Current - Continuous 0.22 A
O
IN
8 V
0.5
P
D
TJ,T
ESD Electrostatic Discharge Rating MIL-STD-883D
Maximum Power Dissipation 0.35 W
Operating and Storage Temperature Range -55 to 150 °C
STG
6.0 kV
Human Body Model (100pf / 1500 Ohm)
THERMAL CHARACTERISTICS
R
JA
θ
© 1999 Fairchild Semiconductor Corporation
Thermal Resistance, Junction-to-Ambient 357 °C/W
FDV301N Rev.F
Inverter Electrical Characteristics (T
= 25°C unless otherwise noted)
A
Symbol Parameter Conditions Min Typ Max Units
I
O (off)
VI
VI
R
(off)
(on)
O (on)
Zero Input Voltage Output Current VCC = 20 V, VI = 0 V 1 µA
Input Voltage VCC = 5 V, IO = 10 µA 0.5 V
VO = 0.3 V, IO = 0.005 A 1 V
Output to Ground Resistance VI = 2.7 V, IO = 0.2 A 4 5
Ω
Electrical Characteristics (T
= 25 OC unless otherwise noted )
A
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BV
∆BV
I
DSS
DSS
DSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 25 V
Breakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 o C 25 mV / oC
/∆T
J
Zero Gate Voltage Drain Current VDS = 20 V, V
= 0 V 1 µA
GS
TJ = 55°C 10 µA
I
GSS
Gate - Body Leakage Current VGS = 8 V, VDS= 0 V 100 nA
ON CHARACTERISTICS (Note)
∆V
V
R
GS(th)
GS(th)
DS(ON)
Gate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 o C -2.1 mV / oC
/∆T
J
Gate Threshold Voltage VDS = VGS, ID = 250 µA 0.65 0.85 1.5 V
Static Drain-Source On-Resistance VGS = 2.7 V, ID = 0.2 A 3.8 5
TJ =125°C 6.3 9
VGS = 4.5 V, ID = 0.4 A 3.1 4
I
D(ON)
g
FS
On-State Drain Current VGS = 2.7 V, VDS = 5 V 0.2 A
Forward Transconductance VDS = 5 V, ID= 0.4 A 0.2 S
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance VDS = 10 V, VGS = 0 V,
Output Capacitance 6 pF
f = 1.0 MHz
9.5 pF
Reverse Transfer Capacitance 1.3 pF
SWITCHING CHARACTERISTICS (Note)
t
t
t
t
Q
Q
Q
D(on)
r
D(off)
f
g
gs
gd
Turn - On Delay Time VDD = 6 V, ID = 0.5 A,
Turn - On Rise Time 6 15 ns
VGS = 4.5 V, R
GEN
= 50 Ω
3.2 8 ns
Turn - Off Delay Time 3.5 8 ns
Turn - Off Fall Time 3.5 8 ns
Total Gate Charge VDS = 5 V, ID = 0.2 A,
Gate-Source Charge 0.22 nC
VGS = 4.5 V
0.49 0.7 nC
Gate-Drain Charge 0.07 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Note:
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
Maximum Continuous Drain-Source Diode Forward Current 0.29 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.29 A
(Note) 0.8 1.2 V
Ω
FDV301N Rev.F
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