Fairchild Semiconductor FDU6692, FDD6692 Datasheet
FDD6692/FDU6692
30V N-Channel PowerTrench
MOSFET
FDD6692/FDU6692
April 2001
General Description
This N-Channel MOSFET has been designed
specifically to i mprove the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS( ON) and fast switching speed.
Features
• 54 A, 30 V. R
R
• Low gate charge (18 nC typical)
• Fast switching
= 12 mΩ @ VGS = 10 V
DS(ON)
= 14.5 mΩ @ VGS = 4.5 V
DS(ON)
Applications
• DC/DC converter
• Motor drives
• High performance trench te chnology for extremely
low R
DS(ON)
D
D
G
S
D-PAK
TO-252
(TO-252)
G DS
Absolute Maximum Ratings T
I-PAK
(TO-251AA)
o
=25
C unless otherwise noted
A
G
S
Symbol Parameter Ratings Units
V
Drain-Source Voltage 30 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 3) 54 A
– Pulsed (Note 1a) 162
PD
TJ, T
STG
Power Dissipation for Single Operation (Note 1) 57
(Note 1a)
Operating and Storage Junction Temperature Range -55 to +175
(Note 1b)
±16
3.8
1.6
V
W
°C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1) 2.6
(Note 1a) 40
(Note 1b) 96
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape width Quantity
FDD6692 FDD6692 D-PAK (TO-252) 13’’ 12mm 2500 units
2001 Fairchild Semiconductor Corporation
FDU6692 FDU6692 I-PAK (TO-251) Tube N/A 75
°C/W
°C/W
°C/W
FDD/FDU6692 Rev C(W)
FDD6692/FDU6692
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
W
Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID=14A 165 mJ
DSS
IAR Drain-Source Avalanche Current 14 A
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
J
Gate–Body Leakage, Forward VGS = 16 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –16 V, VDS = 0 V –100 nA
= 0 V, ID = 250 µA
V
GS
= 250 µA, Referenced to 25°C
I
D
30 V
26
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drai n–Source
On–Resistance
I
On–State Drain Current VGS = 10 V, VDS = 5 V 50 A
D(on)
= VGS, ID = 250 µA
V
DS
= 250 µA, Referenced to 25°C
I
D
VGS = 10 V, ID = 14 A
= 4.5 V, ID = 13 A
V
GS
V
= 10 V, ID = 14 A, TJ = 125°C
GS
gFS Forward Transconductance VDS = 5 V, ID = 14 A 54 S
1 1.6 3 V
–5
9.5
11.5
16.5
12
14.5
18
mV/°C
mΩ
Dynamic Characteristics
C
Input Capacitance 2164 pF
iss
C
Output Capacitance 357 pF
oss
C
Reverse Transfer Capacitance
rss
= 15 V, V
V
DS
f = 1.0 MHz
= 0 V,
GS
138 pF
Switching Characteristics (Note 2)
V
t
Turn–On Delay Time 9 18 ns
d(on)
tr Turn–On Rise Time 5 10 ns
t
Turn–Off Delay Time 35 56 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 18 25 nC
Qgs Gate–Source Charge 5 nC
Qgd Gate–Drain Charge
= 15 V, ID = 1 A,
DD
= 10 V, R
V
GS
V
= 15 V, ID = 14 A,
DS
= 5 V
V
GS
GEN
= 6 Ω
10 20 ns
5 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 3.2 A
VSD Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 3.2 A (Note 2) 0.72 1.2 V
FDD/ FDU6692 Rev. C(W)
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