Fairchild Semiconductor FDU6644, FDD6644 Datasheet
FDD6644/FDU6644
30V N-Channel PowerTrench
MOSFET
FDD6644/FDU6644
April 2001
General Description
This N-Channel MOSFET has been designed
specifically to i mprove the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM c ontrollers. It has been optimized for
low gate charge, low R
and fast switching speed.
DS(ON)
Features
• 67 A, 30 V. R
R
• High performance trench te chnology for extremely
low R
DS(ON)
= 8.5 mΩ @ VGS = 10 V
DS(ON)
= 10.5 mΩ @ VGS = 4.5 V
DS(ON)
Applications
• DC/DC converter
• Low gate charge (25 nC typical)
• High power and current handling capability
D
D
G
S
D-PAK
TO-252
(TO-252)
G DS
Absolute Maximum Ratings T
I-PAK
(TO-251AA)
o
=25
C unless otherwise noted
A
G
S
Symbol Parameter Ratings Units
V
Drain-Source Voltage 30 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1a) 67 A
– Pulsed 100
PD
TJ, T
STG
Maximum Power Dissipation (Note 1) 68
(Note 1a)
Operating and Storage Junction Temperature Range -55 to +175
(Note 1b)
±16
3.8
1.6
V
W
°C
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(Note 1) 2.2
(Note 1b) 96
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape width Quantity
FDD6644 FDD6644 D-PAK (TO-252) 13’’ 12mm 2500 units
2001 Fairchild Semiconductor Corporation
FDU6644 FDU6644 I-PAK (TO-251) Tube N/A 75
°C/W
°C/W
FDD/FDU6644 Rev C(W)
FDD6644/FDU6644
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
W
Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID=17A 240 mJ
DSS
IAR Drain-Source Avalanche Current 17 A
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
J
Gate–Body Leakage, Forward VGS = 16 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –16 V, VDS = 0 V –100 nA
= 0 V, ID = 250 µA
V
GS
= 250 µA, Referenced to 25°C
I
D
30 V
27
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
On–S t ate Drain Current VGS = 10 V, VDS = 5 V 50 A
D(on)
= VGS, ID = 250 µA
V
DS
= 250 µA, Referenced to 25°C
I
D
VGS = 10 V, ID = 16 A
= 4.5 V, ID = 15 A
V
GS
= 10 V, ID = 16.5A,TJ=125°C
V
GS
gFS Forward Transconductance VDS = 5 V, ID = 16 A 74 S
1 1.5 3 V
–5
6.5
7.5
10
8.5
10.5
13
mV/°C
mΩ
Dynamic Characteristics
C
Input Capacitance 3087 pF
iss
C
Output Capacitance 489 pF
oss
C
Reverse Transfer Capacitance
rss
= 15 V, V
V
DS
f = 1.0 MHz
= 0 V,
GS
185 pF
Switching Characteristics (Note 2)
V
t
Turn–On Delay Time 10 20 ns
d(on)
tr Turn–On Rise Time 12 22 ns
t
Turn–Off Delay Time 48 77 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 25 35 nC
Qgs Gate–Source Charge 7.5
Qgd Gate–Drain Charge
= 15 V, ID = 1 A,
DD
= 10 V, R
V
GS
V
= 15 V, ID = 16 A,
DS
= 5 V
V
GS
GEN
= 6 Ω
10 20 ns
6.5
FDD/FDU6644 Rev C(W)
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