Fairchild Semiconductor FDU6612A Datasheet
FDD6612A/FDU6612A
30V N-Channel PowerTrench
MOSFET
FDD6612A/FDU6612A
January 2002
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
extremely low R
DS( ON) , fast switching speed and
in a small package.
DS(ON)
Features
• 30 A, 30 V R
R
• Low gate charge (9 nC typical)
• Fast Switching
= 20 mΩ @ VGS = 10 V
DS(ON)
= 28 mΩ @ VGS = 4.5 V
DS(ON)
Applications
• DC/DC converter
• Motor Drives
• High performance trench technology for extremely
low R
DS(ON)
D
D
G
S
D-PAK
TO-252
(TO-252)
G DS
Absolute Maximum Ratings T
I-PAK
(TO-251AA)
o
=25
C unless otherwise noted
A
G
S
Symbol Parameter Ratings Units
V
Drain-Source Voltage 30 V
DSS
V
Gate-Source Voltage
GSS
ID Continuous Drain Current @TC=25°C (Note 3) 30 A
@TA=25°C (Note 1a) 9.5
Pulsed (Note 1a) 60
PD
TJ, T
STG
Power Dissipation @TC=25°C (Note 3) 36
@TA=25°C (Note 1a) 2.8
@T
Operating and Storage Junction Temperature Range -55 to +175
=25°C (Note 1b) 1.3
A
±20
V
W
°C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1) 3.5
(Note 1a) 45
(Note 1b) 96
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape width Quantity
FDD6612A FDD6612A D-PAK (TO-252) 13’’ 12mm 2500 units
FDU6612A FDU6612A I-PAK (TO-251) Tube N/A 75
2002 Fairchild Sem iconductor Corporation
FDD6612A/FDU6612A Rev D1 (W )
°C/W
°C/W
°C/W
FDD6612A/FDU6612A
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
W
Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID=10 A 90 mJ
DSS
IAR Drain-Source Avalanche Current 10 A
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
I
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current V
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA
= 0 V, ID = 250 µA
V
GS
= 250 µA,Referenced to 25°C
I
D
= 24 V, VGS = 0 V 1
DS
30 V
22
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
= VGS, ID = 250 µA
V
DS
= 250 µA,Referenced to 25°C
I
D
VGS = 10 V, ID = 9.5 A
= 4.5 V, ID = 8 A
V
GS
= 10 V, ID = 9.5 A, TJ=125°C
V
GS
gFS Forward Transconductance VDS = 5 V, ID = 9.5 A 22 S
1 1.6 3 V
-4.2
17
24
26
20
28
36
mV/°C
mΩ
Dynamic Characteristics
C
Input Capacitance 830 pF
iss
C
Output Capacitance 185 pF
oss
C
Reverse Transfer Capacitance
rss
RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.8
V
= 15 V, V
DS
f = 1.0 MHz
= 0 V,
GS
80 pF
Ω
Switching Characteristics (Note 2)
t
Turn–On Delay Time 6 12 ns
d(on)
tr Turn–On Rise Time 10 18 ns
t
Turn–Off Delay Time 18 29 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 9 13 nC
Qgs Gate–Source Charge 2.8 nC
Qgd Gate–Drain Charge
V
= 15 V, ID = 1 A,
DD
V
= 10 V, R
GS
= 40V, ID = 9.5 A,
V
DS
= 5 V
V
GS
GEN
= 6 Ω
5 12 ns
3.1 nC
FDD6612A/FDU6612A Rev. D1 (W)
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