Fairchild Semiconductor FDU6030BL Datasheet
FDD6030BL/FDU6030BL
FDD6030BL/FDU6030BL
30V N-Channel PowerTrench MOSFET
July 2001
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) , fast switching speed and
extremely low R
in a small package.
DS(ON)
Features
• 42 A, 30 V R
R
• Low gate charge (22 nC typical)
• Fast switching
= 16 mΩ @ VGS = 10 V
DS(ON)
= 22 mΩ @ VGS = 4.5 V
DS(ON)
Applications
• DC/DC converter
• Motor drives
• High performance trench technology for extremely
low R
DS(ON)
D
D
G
S
D-PAK
TO-252
(TO-252)
G D S
Absolute Maximum Ratings T
I-PAK
(TO-251AA)
o
=25
C unless otherwise noted
A
G
S
Symbol Parameter Ratings Units
V
Drain-Source Voltage 30 V
DSS
V
Gate-Source Voltage ±20 V
GSS
ID Continuous Drain Current @TC=25°C (Note 3) 42 A
@TA=25°C (Note 1a) 10
Pulsed (Note 1a) 100
PD
TJ, T
STG
Power Dissipation @TC=25°C (Note 3) 50
@TA=25°C (Note 1a) 3.8
@TA=25°C (Note 1b) 1.6
Operating and Storage Junction Temperature Range –55 to +175 °C
W
Thermal Characteristics
R
Thermal Resistance, Junction-to-Case (Note 1) 3.0 °C/W
θJC
R
Thermal Resistance, Junction-to-Ambient (Note 1a) 45 °C/W
θJA
R
Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape width Quantity
FDD6030BL FDD6030BL D-PAK (TO-252) 13’’ 12mm 2500 units
FDU6030BL FDU6030BL I-PAK (TO-251) Tube N/A 75
2001 Fairchild Semiconductor Corporation FDD6030BL/FDU6030BL Rev C(W)
FDD6030BL/FDU6030BL
Electrical Characteristics T
= 25°C unless otherw ise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
W
Drain-Source Avalanche Energy Single Pulse, VDD = 15 V 130 mJ
DSS
IAR Drain-Source Avalanche Current 10 A
Off Cha racteristics
BV
Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V
DSS
∆BVDSS
∆TJ
I
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
ID = 250 µA,Referenced to 25°C
22
mV/°C
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA
On Characteristics (Note 2)
V
Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.6 3 V
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 10 A
VGS = 4.5 V, ID = 8.4 A
VGS = 10 V, ID = 10 A, TJ=125°C
I
On–State Drain Current VGS = 10 V, VDS = 5 V 50 A
D(on)
–4
12
17
19
16
22
26
mV/°C
m Ω
gFS Forward Transconductance VDS = 10 V, ID = 10 A 29 S
Dynamic Characteristics
C
Input Capacitance 1143 pF
iss
C
Output Capacitance 249 pF
oss
C
Reverse Transfer Capacitance
rss
VDS = 15 V, V
f = 1.0 MHz
= 0 V,
GS
107 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 6 12 ns
d(on)
tr Turn–On Rise Time 10 18 ns
t
Turn–Off Delay Time 18 29 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 22 31 nC
Qgs Gate–Source Charge 3 nC
Qgd Gate–Drain Charge
VDD = 15 V, ID = 1 A,
VGS = 10 V, R
GEN
= 6 Ω
VDS = 15V, ID = 10 A,
VGS = 10 V
5 12 ns
4 nC
FDD6030BL/FDU6030BL Rev. C(W)
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