Fairchild Semiconductor FDT458P Datasheet
SOT-223
FDT458P
FDT458P
30V P-Channel PowerTrench MOSFET
June 2001
General Description
This P-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
Features
• 3.4 A, –30 V. R
R
• Fast switching speed
DS(ON)
DS(ON)
= 130 mΩ @ VGS = 10 V
= 200 mΩ @ VGS = 4.5 V
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
specifications.
DS(ON)
Applications
• Battery chargers
• Motor drives
• Low gate charge (2.5 nC typical)
• High performance trench technology for extremely
low R
DS(ON)
• High power and current handling capability in a
widely used surface mount package
D
D
S
D
G
Absolute Maximum Ratings T
SG D
o
=25
C unless otherwise noted
A
D
SOT-223*
(J23Z)
S
G
D
G
S
Symbol Parameter Ratings Units
V
Drain-Source Voltage – 30 V
DSS
V
Gate-Source Voltage ±20 V
GSS
ID Drain Current – Continuous (Note 1a) 3.4 A
– Pulsed 10
PD
TJ, T
STG
Maximum Power Dissipation (Note 1a) 3.0
(Note 1b)
(Note 1c)
1.3
1.1
Operating and Storage Junction Temperature Range –55 to +150 °C
W
Thermal Characteristics
R
Thermal Resistance, Junction-to-Ambient (Note 1a) 42 °C/W
θJA
R
Thermal Resistance, Junction-to-Case (Note 1) 12 °C/W
θJC
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
458P FDT458P 13’’ 12mm 2500 units
2001 Fairchild Semiconductor Corporation FDT458P Rev. B(W)
FDT458P
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –30 V
DSS
∆BVDSS
∆TJ
I
Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1 µA
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
ID = –250 µA, Referenced to 25°C –23 mV/°C
Gate–Body Leakage, Forward VGS = –25 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –25 V, VDS = 0 V –100 nA
On Characteristics (Note 2)
V
Gate Threshold Voltage VDS = VGS, ID = –250 µA –1 –1.8 –3 V
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
I
D(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = –250 µA, Referenced to 25°C
VGS = –10 V, ID = –3.4 A
VGS = –4.5 V, ID = –2.7 A
VGS=–10 V, ID =–3.4 A, TJ=125°C
4 mV/°C
105
157
147
130
200
210
m Ω
On–State Drain Current VGS = –10 V, VDS = –5 V –5 A
gFS Forward Transconductance VDS = –5 V, ID = –3.4 A 3 S
Dynamic Characteristics
C
Input Capacitance 205 pF
iss
C
Output Capacitance 55 pF
oss
C
Reverse Transfer Capacitance
rss
VDS = –15 V, V
f = 1.0 MHz
= 0 V,
GS
26 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 4.5 9 ns
d(on)
tr Turn–On Rise Time 12.5 23 ns
t
Turn–Off Delay Time 11 20 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 2.5 3.5 nC
Qgs Gate–Source Charge 0.7 nC
Qgd Gate–Drain Charge
VDD = –15 V, ID = –1 A,
VGS = –10 V, R
GEN
= 6 Ω
VDS = –15 V, ID = –3.4 A,
VGS = –10 V
2 4 ns
1 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current –2.5 A
VSD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
a) 42°C/W when
mounted on a 1in2
pad of 2 oz copper
is determined by the user's board design.
θCA
VGS = 0 V, IS = –2.5 A (Note 2) –0.8 –1.2 V
b) 95°C/W when
mounted on a .0066
in2 pad of 2 oz
copper
c) 110°C/W when mounted on a
minimum pad.
FDT458P Rev. B(W)
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