Fairchild Semiconductor FDT434P Datasheet
FDT434P
P-Channel 2.5V Specified PowerTrench MOSFET
FDT434P
January 2000
General Description
This P-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
Applications
Low Dropout Regulator
•
DC/DC converter
•
Load switch
•
Motor driving
•
D
D
S
D
SOT-22 3
G
Absolute Maximum Ratings
SG
D
TA=25oC unless otherwise noted
Features
–5.5 A, –20 V. R
•
Low gate charge (13nC typical)
•
High performance trench technology for extremely
•
DS(ON)
.
low R
High power and current handling capability in a
•
widely used surface mount package.
D
G
*
SOT-223
(J23Z)
= 0.050 Ω @ VGS = –4.5 V
DS(ON)
= 0.070 Ω @ VGS = –2.5 V.
R
DS(ON)
D
S
G
S
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
stg
Drain-Source Voltage –20 V
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
8
±
–6 A
– Pulsed –30
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
3
1.3
1.1
Operating and Storage Junction Temperature Range -55 to +150
V
W
C
°
Thermal Characteristics
R
JA
θ
R
JC
θ
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
42
12
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
434 FDT434P 13’’ 12mm 2500 units
1999 Fairchild Semiconductor Corpor ation
C/W
°
C/W
°
FDT434P Rev. C1 (W)
FDT434P
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
BV
∆
T
∆
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
GS(th)
V
∆
T
∆
R
DS(on)
I
D(on)
g
FS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
DSS
Coefficient
J
V
= 0 V, ID = –250 µA
GS
I
= –250 µA,Referenced to 25°C
D
–20 V
–28
Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1
Gate–Body Leakage Current,
VGS = 8 V, VDS = 0 V 100 nA
Forward
Gate–Body Leakage Current,
VGS = –8 V VDS = 0 V –100 nA
Reverse
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain–Source
On–Resistance
V
= VGS, ID = –250 µA
DS
= –250 µA,Referenced to 25°C
I
D
VGS = –4.5 V, ID = –6 A
= –4.5 V, ID = –6 A
V
GS
= –2.5 V, ID = –4 A
V
GS
=125°C
T
J
–0.4 –0.6 –1 V
2
0.040
0.067
0.050
On–State Drain Current VGS = –4.5 V, VDS = –5 V –20 A
Forward Transconductance VDS = –10 V, ID = –6 A 6.5 S
0.050
0.083
0.070
mV/°C
A
µ
mV/°C
Ω
Dynamic Characteristics
= –10 V, V
C
iss
C
oss
C
rss
Input Capacitance 1240 pF
Output Capacitance 270 pF
Reverse Transfer Capacitance
V
DS
f = 1.0 MHz
GS
= 0 V,
100 pF
Switching Characteristics
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
g
gs
gd
Turn–On Delay Time 8 16 ns
Turn–On Rise Time 15 25 ns
Turn–Off Delay Time 45 65 ns
Turn–Off Fall Time
Total Gate Charge 13 19 nC
Gate–Source Charge 1.8 nC
Gate–Drain Charge
(Note 2)
V
= –5 V, ID = –1 A,
DD
= –4.5 V, R
V
GS
V
= –10 V, ID = –6 A,
DS
= –4.5 V
V
GS
GEN
= 6
Ω
30 50 ns
3nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
1.
JA
θ
the drain pins. R
Scale 1 : 1 on letter size paper
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2.
Maximum Continuous Drain–Source Diode Forward Current –1.3 A
Drain–Source Diode Forward
VGS = 0 V, IS = –2.1 A
(Note 2)
–0.75 –1.2 V
Voltage
is guaranteed by design while R
JC
θ
a) 42°C/W when
mounted on a 1in
pad of 2 oz copper
is determined by the user's board design.
CA
θ
2
b) 95°/W when mounted
on a .0066 in
2 oz copper
2
pad of
c) 110°/W when mounted on a
minimum pad.
FDT434P Rev. C1 (W)
Typical Characteristics
FDT434P
20
V = - 4.5V
GS
16
-3. 0V
- 2.5V
12
8
4
D
0
012345
- 2. 0V
-1. 5V
-V , DRAIN-S OURCE VOLTAGE (V)
DS
1.8
1.6
V = -2.5V
GS
1.4
1.2
DS(ON)
R , NORMALIZED
1
DRAIN-SOURCE ON-RESISTANCE
0.8
0 5 10 15 20
-3.0V
-3.5V
- I , DRAIN CURRENT (A)
D
-4.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
I = - 6 A
D
V = - 4.5V
1.4
GS
1.2
1
DS(ON)
R , NORMALIZED
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
T =125°C
R
A
25°C
-4.5V
I = -6 A
D
Figure 3. On-Resistance Variation
withTemperature.
15
V = -5V
DS
12
9
6
D
- I , DRAIN CURRENT (A)
3
0
0.9 1.2 1.5 1.8 2.1 2.4 2.7
-V , GATE TO SOURCE VOLTAGE (V)
GS
T = -55°C
J
125°C
25°C
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
15
V = 0V
GS
T = 125°C
1
0.1
0.01
S
- I , REVERSE DRAIN CURRENT (A)
0.001
0 0.2 0.4 0.6 0.8 1 1.2 1.4
J
25°C
-55°C
-V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDT434P Rev. C1 (W)
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