Fairchild Semiconductor FDS9953A Datasheet

FDS9953A

FDS9953A

Dual 30V P-Channel PowerTrench MOSFET

May 2001

General Description

This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V).

Applications

• Power management

• Load switch

• Battery protection

D1

D

D1

D

D2

D

D2

D

S2

S

G2

S

G1

G

S1

S

o

=25

C unless otherwise noted

A

SO-8

SO-8

Pin 1

Absolute Maximum Ratings T

Features

• –2.9 A, –30 V R
R

• Low gate charge (2.5nC typical)

• Fast switching speed

• High performance trench technology for extremely

low R

• High power and current handling capability

DS(ON)

5
6
7
8

= 130 mΩ @ VGS = –10 V

DS(ON)

= 200 mΩ @ VGS = –4.5 V

DS(ON)

4

Q1

Q2

3
2
1

Symbol Parameter Ratings Units

V

Drain-Source Voltage

DSS

V

Gate-Source Voltage

GSS

ID Drain Current – Continuous (Note 1a)
– Pulsed
PD

TJ, T

STG

Power Dissipation for Dual Operation 2
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b)
(Note 1c)

Operating and Storage Junction Temperature Range –55 to +150 °C

–30

±25

±2.9

±10

1

0.9

V
V
A

W

Thermal Characteristics

R

Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W

θJA

R

Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W

θJC

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS9953A FDS9953A 13’’ 12mm 2500 units

2001 Fairchild Semiconductor Corporation FDS9953A Rev B(W)

FDS9953A

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

DSS

∆BVDSS
∆TJ

I

Zero Gate Voltage Drain Current

DSS

I

Gate–Body Leakage, Forward

GSSF

I

GSSR

Drain–Source Breakdown
Voltage
Breakdown Voltage Temperature
Coefficient

Gate–Body Leakage, Reverse

VGS = 0 V, ID = –250 µA
ID = –250 µA, Referenced to 25°C
VDS = –24 V, VGS = 0 V –2

VGS = –25 V, VDS = 0 V –100 nA
VGS = 25 V, VDS = 0 V 100 nA

–30 V

–23

mV/°C

µA

On Characteristics (Note 2)

V

Gate Threshold Voltage

GS(th)

∆VGS(th)
∆TJ

R

DS(on)

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source

On–Resistance

VDS = VGS, ID = –250 µA
ID = –250 µA, Referenced to 25°C

VGS = –10 V, ID = –1 A
VGS = –10 V, ID = –1 A, TJ=125°C
VGS = –4.5 V, ID = –0.5 A
VGS = –4.5 V, ID = –0.5 A, TJ=125°C

I

On–State Drain Current

D(on)

VGS = –10 V, VDS = –5 V –5
VGS = –4.5 V, VDS = –5 V –1.5

gFS Forward Transconductance VDS = –15 V, ID = –1 A 4 S

–1 –1.8 –3.0 V

4
95

137
142
202

130
200
200

310

mV/°C

m Ω

A

Dynamic Characteristics

C

Input Capacitance 185 pF

iss

C

Output Capacitance 56 pF

oss

C

Reverse Transfer Capacitance

rss

VDS = –15 V, V
f = 1.0 MHz

= 0 V,

GS

26 pF

Switching Characteristics (Note 2)

t

Turn–On Delay Time 4.5 9 ns

d(on)

tr Turn–On Rise Time 13 23 ns
t

Turn–Off Delay Time 11 20 ns

d(off)

tf Turn–Off Fall Time
Qg Total Gate Charge 2.5 3.5 nC
Qgs Gate–Source Charge 0.8 nC
Qgd Gate–Drain Charge

VDD = –15 V, ID = –1 A,
VGS = –10 V, R

GEN

= 6 Ω

VDS = –5 V, ID = –1 A,
VGS = –10 V

2 4 ns

0.9 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current
VSD Drain–Source Diode Forward

VGS = 0 V, IS = –1.3 A (Note 2) –0.8 1.3 V

Voltage

trr Reverse Recovery Time VGS = 0 V, IF = –1.25A,

dIF/dt = 100A/µs

–1.2

A

17 100 nS

FDS9953A Rev B(W)