Fairchild Semiconductor FDS9933A Datasheet

FDS9933A

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Dual P-Channel 2.5V Specified PowerTrench  MOSFET

FDS9933A

November 1998

General Description

These P-Channel 2.5V specified MOSFET s are produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.

Features

• -3.8 A, -20 V. R

R

= 0.075 Ω @ V

DS(on)

= 0.105 Ω @ V

DS(on)

• Low gate charge ( 7nC typical ).

= -4.5 V

GS

= -2.5 V.

GS

• Fast switching speed.

Applications

• Load switch

• DC/DC converter

• High performance trench technology for extremely

low R

DS(on)

.

• High power and current handling capability .

• Motor drives

D2

D2

D1

D1

S2

G1

1

SO-8

pin

S1

Absolute Maximum Ratings

G2

T

=25oC unless otherwise noted

A

5
6

7

8

4

3
2

1

Symbol Parameter FDS9933A Units

V

DSS

V

GSS

I

D

P

D

TJ, T

stg

Drain-Source Voltage -20 V
Gate-Source Voltage
Drain Current - Continuous

Note 1a

8V

±

-3.8 A

- Pulsed -20
Power Dissipation for Dual Operation 2.0
Power Dissipation for Single Operation

Note 1a

Note 1b
Note 1c

1.6

1.0

0.9

Operating and Storage Junction Temperature Range -55 to +150

W

C

°

Thermal Characteristics

R

JA

θ

R

JC

θ

Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width

FDS9933A FDS9933A 13’’ 12mm 2500 units

1998 Fairchild Semiconductor Corporation

(Note 1a)
(Note 1)

78
40

C/W

°

C/W

°

Quantity

FDS9933A Rev. C

FDS9933A

DMOS Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

∆Β
∆

I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA-20 V

DSS

Breakdown Voltage Temperature

DSS

V

Coefficient

T

J

Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1

ID = -250 µA, Referenced to 25°C-16mV/

A

µ

Gate-Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA
Gate-Body Leakage, Reverse VGS = -8 V, VDS = 0 V -100 nA

On Characteristics (Note 2)

V

GS(th)

GS(th)

V

∆

T

∆

R

DS(on)

I

D(on)

g

FS

Gate Threshold Voltage VDS = VGS, ID = -250 µA -0.4 -0.8 -1.5 V
Gate Threshold Voltage

Temperature Coefficient

J

Static Drain-Source
On-Resistance

ID = -250 µA, Referenced to 25°C2.5mV/

VGS = -4.5 V, ID = -3.8 A
V

= -4.5 V, ID = -3.8 A, TJ = 125°C

GS

V

= -2.5 V, ID = -3.3 A

GS

0.058

0.086

0.084

On-State Drain Current VGS = -4.5 V, VDS = -5.0 V -10 A
Forward Transconductance VDS = -4.5 V, ID = -3.8 A 10 S

0.075

0.12

0.105

Ω
Ω
Ω

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance VDS = -10 V, VGS = 0 V, f = 1.0 MHz 600 pF
Output Capacitance 175 pF
Reverse Transfer Capacitance 80 pF

Switching Characteristics (Note 2)

C

°

C

°

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g

gs

gd

Turn-On Delay Time VDD = -5 V, ID = -0.5 A, 6 12 ns
Turn-On Rise Time VGS = -4.5 V, R

GEN

= 6.0

Ω

918ns
Turn-Off Delay Time 31 50 ns
Turn-Off Fall Time 28 42 ns
Total Gate Charge VDS = -10 V, ID = -3.8 A, 7 10 nC
Gate-Source Charge VGS = -4.5 V 1.3 nC
Gate-Drain Charge 2 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:
1: R

θJA

the drain pins. R

Scale 1 : 1 on letter size paper

2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Maximum Continuous Drain-Source Diode Forward Current -1.3 A
Drain-Source Diode Forward

VGS = 0 V, IS = -1.3 A

(Note 2)

-0.75 -1.2 V

Voltage

is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of

is guaranteed by design while R

θJC

a) 78° C/W when

mounted on a 0.5 in
pad of 2 oz. copper.

is determined by the user's board design.

θJA

2

b) 125° C/W when

mounted on a 0.02 in
pad of 2 oz. copper.

2

c) 135° C/W when

mounted on a 0.003 in
pad of 2 oz. copper.

2

FDS9933A Rev. C

T ypical Characteristics (continued)

FDS9933A

20

V = - 4.5V

GS

-3.5V

-3.0V

15

10

-2.5V

-2.0V

5

D

- I , DRAIN-SOURCE CURREN T (A )
0

012345

- V , DRAI N-SOURCE VOLTA GE (V)

DS

-1.5V

0.12

V = -2 .0V

GS

0.1

-2.5 V

0.08

-3.0 V

-3.5 V

DS(ON )

0.06

R , NORM ALIZED

DR AIN-SOURCE ON-R ESIST ANCE

0.04
0 4 8 121620

- I , DRAIN CURRENT (A)

D

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate V oltage.

1.6

I = -3. 8A

D

V = -4.5V

GS

1.4

1.2

1

DS(ON)

R , NORM ALIZED

0.8

DRAI N-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150
T , JU N CT ION TEMPERATU RE (° C)

J

0.25

0.2

0.15

T = 125°C

0.1

0.05

DS(ON)

R , ON-RESISTANCE (OHM)

0

12345

- V , GATE TO SOURCE VOLTAGE (V)

GS

J

25°C

-4.5 V

I = -2.0A

D

Figure 3. On-Resistance Variation

withT emperature.

10

V = -5V

DS

8

6

4

D

- I , DRAIN CURRE NT (A)

2

0

11.522.53

-V , GA TE TO S OURCE VOLTAGE ( V)

GS

T = -55° C

J

125°C

25°C

Figure 5. Transfer Characteristics.

Figure 4. On-Resistance Variation with

Gate-to-Source V oltage.

10

V = 0V

GS

1

0.1

0.01

0.0 01

S

-I , REV ERS E DRAIN CURRE NT (A)

0.0001
0 0.2 0.4 0.6 0.8 1 1.2

T = 1 25° C

J

25 °C

-55 °C

-V , BODY DIO DE FORWARD VOLTA G E (V)

SD

Figure 6. Body Diode Forward V oltage

Variation with Source Current

and Temperature.

FDS9933A Rev. C