Fairchild Semiconductor FDS9435A Datasheet

May 1999

FDS9435A
Single P-Channel Enhancement Mode Field Effect Transistor

GeneralDescription Features

SO-8 P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance
and provide superior switching performance. These devices
are particularly suited for low voltage applications such as
notebook computer power management and other battery
powered circuits where fast switching, low in-line power loss,
and resistance to transients are needed.

SOT-23

SuperSOTTM-8

D

D

D

D

FDS

9435A

G

SO-8

1

pin

S

S

S

-5.3 A, -30 V, R
R

High density cell design for extremely low R
High power and current handling capability in a widely

used surface mount package.

SO-8 SOT-223SuperSOTTM-6

= 0.045 Ω @ VGS = -10 V,

DS(ON)

= 0.075 Ω @ VGS = - 4.5 V.

DS(ON)

5

6
7

8

DS(ON)

SOIC-16

4

3
2
1

.

Absolute Maximum Ratings T

Symbol Parameter FDS9435A Units

V

DSS

V

GSS

I

D

Drain-Source Voltage -30 V
Gate-Source Voltage -20 V
Drain Current - Continuous (Note 1a) - 5.3 A

= 25oC unless otherwise noted

A

- Pulsed -50

P

D

TJ,T

THERMAL CHARACTERISTICS

R

JA

θ

R

JC

θ

© 1999 Fairchild Semiconductor Corporation

Maximum Power Dissipation (Note 1a) 2.5 W

(Note 1b)

(Note 1c)

Operating and Storage Temperature Range -55 to 150 °C

STG

1.2
1

Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W

FDS9435A Rev.C

Electrical Characteristics (T

= 25 OC unless otherwise noted )

A

Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS

BV

∆BV

I

DSS

I

GSSF

I

GSSR

DSS

DSS

Drain-Source Breakdown Voltage VGS = 0 V, I D = -250 µA -30 V
Breakdown Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 oC -25 mV/ oC

/∆T

J

Zero Gate Voltage Drain Current VDS = -24 V, V

= 0 V -1 µA

GS

Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V -100 nA
Gate - Body Leakage, Reverse VGS = -20 V, V

= 0 V -100 nA

DS

ON CHARACTERISTICS (Note 2)

V

∆V

R

GS(th)

GS(th)

DS(ON)

Gate Threshold Voltage VDS = VGS, ID = -250 µA -1 -1.5 -3 V
Gate Threshold Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 oC -3.2 mV/oC

/∆T

J

Static Drain-Source On-Resistance VGS = -10 V, I D = -5.3 A 0.035 0.045

Ω

TJ =125°C 0.052 0.072

VGS = -4.5 V, I D = -4.0 A 0.059 0.075

I

D(ON)

g

FS

On-State Drain Current VGS = -10 V, VDS = -5 V -25 A
Forward Transconductance VDS = -10 V, I D = -4 A 9.5 S

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

Input Capacitance VDS = -15 V, VGS = 0 V,
Output Capacitance 400 pF

f = 1.0 MHz

730 pF

Reverse Transfer Capacitance 90 pF

SWITCHING CHARACTERISTICS (Note 2)

t
t

t
t
Q
Q
Q

D(on)

r

D(off)

f

g

gs

gd

Turn - On Delay Time V
Turn - On Rise Time

= -10 V, I

DS

VGS = -10 V , R

= -1 A 11 20 ns

D

GEN

= 6 Ω

10 18

Turn - Off Delay Time 90 125
Turn - Off Fall Time 55 80
Total Gate Charge VDS = -10 V, I D = -4 A, 19 27 nC
Gate-Source Charge VGS = -10 V 3.5
Gate-Drain Charge 3.6

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

V

SD

Notes:

1. R

JA

θ

guaranteed by design while R

Maximum Continuous Drain-Source Diode Forward Current -2.1 A
Drain-Source Diode Forward Voltage VGS = 0 V, I S = -2.1 A

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R

is determined by the user's board design.

CA

θ

(Note 2) -0.77 -1.2 V

θ

is

JC

a. 50OC/W on a 1 in2 pad

of 2oz copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

b. 105OC/W on a 0.04 in

pad of 2oz copper.

2

c. 125OC/W on a 0.006 in2 pad

of 2oz copper.

FDS9435A Rev.C

Typical Electrical Characteristics

50

V = -10V

GS

-7.0V

40

30

20

-6.0V

-5.0V

-4.5V

-4.0V

10

D

- I , DRAIN-SOURCE CURRENT (A)
0

0 2 4 6 8 10

-V , DRAIN-SOURCE VOLTAGE (V)

DS

-3.5V

Figure 1. On-Region Characteristics.

1.6

I = -5.3A

D

V = -10V

GS

1.4

1.2

1

DS(ON)

0.8

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

Figure 3. On-Resistance Variation with

Temperature.

3

V = -3.5 V

GS

2.5

2

1.5

DS(on)

R , NORMALIZED

1

DRAIN-SOURCE ON-RESISTANCE

0.5
0 10 20 30 40 50

Figure 2. On-Resistance Variation with

0.2

0.175

0.15

0.125

0.1

0.075

0.05

DS(ON)

0.025

R , ON-RESISTANCE (OHM)

0

2 4 6 8 10

Figure 4. On-Resistance Variation with

-4.0V

-4.5V

-5.0V

-6.0V

-8.0V

-10V

- I , DRAIN CURRENT (A)

D

Drain Current and Gate Voltage.

I = -2.7A

D

T = 125°C

J

T = 25°C

J

-V , GATE TO SOURCE VOLTAGE (V)

GS

Gate-to-Source Voltage.

50

V = -5V

DS

40

30

20

D

- I , DRAIN CURRENT (A)

10

0

0 2 4 6 8 10

-V , GATE TO SOURCE VOLTAGE (V)

T = -55°C

J

25°C

125°C

GS

Figure 5. Transfer Characteristics.

60

V = 0V

GS

10

T = 125°C

1

J

25°C

0.1

-55°C

0.01

0.001

S

-I , REVERSE DRAIN CURRENT (A)

0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4

-V , BODY DIODE FORWARD VOLTAGE (V)

SD

Figure 6 . Body Diode Forward Voltage

Variation with Source Current
and Temperature.

FDS9435A Rev.C