Fairchild Semiconductor FDS9412 Datasheet
FDS9412
Single N-Channel Enhancement Mode Field Effect Transistor
FDS9412
April 2000
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are particularly suited for low voltage
Features
7.9 A, 30 V. R
•
Very low gate charge.
•
High switching speed
•
R
DS(ON)
DS(ON)
= 22 mΩ @ VGS = 10 V
= 36 mΩ @ VGS = 4.5 V
applications such as notebook computer DC-DC
converter where fast switching, low conduction loss and
high efficiency are needed.
High performance trench technology for extremely
•
low R
DS(ON)
High power and current handling capability in a
•
widely used surface mount package.
D
D
D
D
G
S
SO-8
S
S
Absolute Maximum Ratings
TA=25oC unless otherwise noted
5
6
7
8
4
3
2
1
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 30 V
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
20
±
7.9 A
– Pulsed 24
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
2.5
1.2
1.0
Operating and Storage Junction Temperature Range -55 to +150
V
W
C
°
Thermal Characteristics
R
JA
θ
R
JC
θ
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS9412 FDS9412 13’’ 12mm 2500 units
2000 Fairchild Semiconductor Corporation
C/W
°
C/W
°
FDS9412 Rev D(W)
FDS9412
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
BV
∆
T
∆
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
GS(th)
V
∆
T
∆
R
DS(on)
I
D(on)
g
FS
Drain–Source Breakdown Voltage
DSS
Breakdown Voltage Temperature
Coefficient
J
V
= 0 V, ID = 250 µA
GS
I
= 250 µA, Referenced to 25°C
D
30 V
28
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain–Source
On–Resistance
V
= VGS, ID = 250 µA
DS
I
= 250 µA, Referenced to 25°C
D
VGS = 10 V, ID = 7.9 A
= 10 V, ID = 7.9 A, TJ=125°C
V
GS
= 4.5 V, ID = 6.2 A
V
GS
11.62.0 V
-4.3
19
30
25
On–State Drain Current VGS = 10 V, VDS = 5 V 16 A
Forward Transconductance VDS = 10 V, ID = 7.9 A 22 S
mV/°C
mV/°C
22
35
36
Dynamic Characteristics
C
iss
C
oss
C
rss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Input Capacitance 830 pF
Output Capacitance 185 pF
Reverse Transfer Capacitance
(Note 2)
Turn–On Delay Time 6 12 ns
Turn–On Rise Time 10 20 ns
= 15 V, V
V
DS
f = 1.0 MHz
= 10 V, ID = 1 A,
V
DD
= 10 V, R
V
GS
GS
GEN
= 0 V,
= 6
80 pF
Ω
Turn–Off Delay Time 18 32 ns
Turn–Off Fall Time
V
= 12 V, ID = 7.9 A,
Total Gate Charge 14 22 nC
Gate–Source Charge 2.7 nC
V
DS
= 10 V
GS
Gate–Drain Charge
510ns
3.0 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
1.
JA
θ
the drain pins. R
Maximum Continuous Drain–Source Diode Forward Current 2 A
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
JC
θ
= 0 V, IS = 2 A
V
GS
is determined by the user's board design.
CA
θ
(Note 2)
0.7 1.2 V
A
µ
m
Ω
a) 50°/W when
mounted on a 1in
pad of 2 oz copper
Scale 1 : 1 on letter size paper
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2.
2
b) 105°/W when
mounted on a .04 in
pad of 2 oz copper
2
c) 125°/W when mounted on a
minimum pad.
FDS9412 Rev D(W)
Typical Characteristics
FDS9412
30
VGS = 10V
25
6.0V
5.0V
20
4.5V
15
10
5
0
00.511.522.5
4.0V
3.5V
3.0V
2.5V
V
, DRAIN-SOURCE VOLTAGE (V)
DS
2.5
VGS = 3.0V
2
3.5V
1.5
1
0.5
0 5 10 15 20 25 30
4.0V
4.5V
, DRAIN CURRENT (A)
I
D
5.0V
6.0V
10V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
ID = 7.9A
1.6
VGS = 10V
1.4
1.2
1
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125 150
T
, JUNCTION TEMP E RATURE (oC)
J
0.1
0.08
0.06
0.04
TA = 25oC
0.02
0
246810
TA = 125oC
, GATE TO SOURCE VOLTAGE (V)
V
GS
ID = 7.9 A
Figure 3. On-Resistance Variation with
Temperature.
30
VDS = 5V
25
20
15
10
5
0
0.5 1.5 2.5 3.5 4.5
V
, GATE TO SOURCE VOLTAGE (V)
GS
TA = -55oC
o
o
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
0.001
0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4
TA = 125oC
o
25
-55oC
V
, BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS9412 Rev D(W)
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