Fairchild Semiconductor FDS8958A Datasheet

FDS8958A
Dual N & P-Channel Enhancement Mode Field Effect Transistor

General Description Features

June 1998

These dual N- and P -Channel enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for low
voltage applications such as notebook computer power
management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.

SuperSOTTM-6

D2

D2

D1

D1

FDS

8958A

G2

S2

SO-8

pin 1

G1

S1

N-Channel 7.0 A,30 V, R
R
P-Channel -5.0 A,-30 V,R
R

High density cell design for extremely low R

=0.028 Ω @ VGS=10 V

DS(ON)

=0.040 Ω @ VGS= 4.5 V.

DS(ON)

=0.052 Ω @ VGS=-10 V

DS(ON)

=0.080Ω @ VGS=-4.5 V.

DS(ON)

.

DS(ON)

High power and current handling capability in a widely used
surface mount package.

Dual (N & P-Channel) MOSFET in surface mount package.

SOIC-16SOT-23 SuperSOTTM-8 SO-8 SOT-223

5

6

7

8

3
2

141

Absolute Maximum Ratings T

Symbol Parameter N-Channel P-Channel Units

V

DSS

V

GSS

I

D

P

D

TJ,T

THERMAL CHARACTERISTICS

R

θJA

R

θ

JC

© 1998 Fairchild Semiconductor Corporation

Drain-Source Voltage 30 -30 V
Gate-Source Voltage 20 -20 V
Drain Current - Continuous (Note 1a) 7 -5 A

- Pulsed 20 -20
Power Dissipation for Dual Operation 2 W
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b) 1
(Note 1c) 0.9
Operating and Storage Temperature Range -55 to 150 °C

STG

Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W

= 25°C unless otherwise noted

A

FDS8958A Rev. C

Electrical Characteristics (T

= 25°C unless otherwise noted)

A

Symbol Parameter Conditions Type Min Typ Max Units
OFF CHARACTERISTICS

BV

∆BV

I

DSS

I

GSSF

I

GSSR

DSS

DSS

Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA N-Ch 30 V

VGS = 0 V, ID = -250 µA

Breakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC N-Ch 30 mV/oC

/∆T

J

ID = -250 µA, Referenced to 25 oC

Zero Gate Voltage Drain Current VDS = 24 V, V

VDS = -24 V, V

= 0 V N-Ch 1 µA

GS

= 0 V

GS

P-Ch -30 V

P-Ch -25

P-Ch -1 µA
Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V All 100 nA
Gate - Body Leakage, Reverse

VGS = -20 V, VDS = 0 V

All -100 nA

ON CHARACTERISTICS (Note 2)

V

∆V

R

I

D(on)

g

GS(th)

DS(ON)

FS

GS(th)

Gate Threshold Voltage

Gate Threshold Voltage Temp. Coefficient

/∆T

J

Static Drain-Source On-Resistance

On-State Drain Current

Forward Transconductance

V

= VGS, ID = 250 µA

DS

V

= VGS, ID = -250 µA

DS

ID = 250 µA, Referenced to 25 oC
ID = -250 µA, Referenced to 25 oC
V

= 10 V, ID = 7.0 A

GS

V

= 4.5 V, ID = 6.0 A 0.035 0.04

GS

V

= -10 V, ID = -5.0 A

GS

V

= -4.5 V, ID = - 4.0 A 0.068 0.08

GS

VGS = 10 V, V
VGS = -10 V, V

= 5 V

DS

= -5 V P-Ch -20

DS

VDS = 5 V, I D = -7 A

N-Ch 1 1.7 3 V

P-Ch -1 -1.5 -3 V

N-Ch -4.4

mV/oC
P-Ch 3.2
N-Ch 0.024 0.028

P-Ch 0.044 0.052

N-Ch 20 A

N-Ch 15 S

Ω

VDS = -5 V, I D = -5 A P-Ch 8 S

DYNAMIC CHARACTERISTICS

C

iss

C

oss

Input Capacitance

VDS = 15 V, VGS = 0 V,
f = 1.0 MHz

Input Capacitance N-Ch 345 pF

VDS = -15 V, VGS = 0 V,

C

rss

Reverse Transfer Capacitance N-Ch 90 pF

f = 1.0 MHz

N-Ch 650 pF
P-Ch 730

P-Ch 400

P-Ch 90

FDS8958A Rev. C

Electrical Characteristics (continued)

SWITCHING CHARACTERISTICS (Note 2)
Symbol Parameter Conditions Type Min Typ Max Units

t

D(on)

t

r

t

D(off)

t

f

Q

g

Q

gs

Q

gd

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

V

SD

Notes:

1. R

JA

θ

design while R

Turn - On Delay Time V

= 10 V, I D = 1 A N-Ch 8 16 ns

DS

VGS = 10 V , R

GEN

= 6 Ω

P-Ch 11 20

Turn - On Rise Time N-Ch 14 25 ns

P-Ch 10 18

Turn - Off Delay Time V

= -10 V, I D = -1 A N-Ch 23 37 ns

DS

VGS = -10 V , R

GEN

= 6 Ω

P-Ch 90 125

Turn - Off Fall Time N-Ch 9 18 ns

P-Ch 55 80

Total Gate Charge

VDS = 10 V, I D = 7 A,
VGS = 10 V

N-Ch 18 26 nC
P-Ch 19 27

Gate-Source Charge N-Ch 3.2 nC

VDS = -10 V, I D = -5 A, P-Ch 3.5

Gate-Drain Charge

VGS = -10 V

N-Ch 4.3 nC
P-Ch 3.6

Maximum Continuous Drain-Source Diode Forward Current N-Ch 1.3 A

P-Ch -1.3 A

Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A

VGS = 0 V, IS = -1.3 A

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R

is determined by the user's board design.

CA

θ

(Note 2) N-Ch 0.75 1.2 V

(Note 2)

P-Ch -0.75 -1.2 V

is guaranteed by

JC

θ

a. 78OC/W on a 0.5 in

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%..

pad of 2oz copper.

2

b. 125OC/W on a 0.02 in

pad of 2oz copper.

2

c. 135OC/W on a 0.003 in

pad of 2oz copper.

2

FDS8958A Rev. C

Typical Electrical Characteristics: N-Channel

30

V = 10V

GS

5.5V

24

18

12

4.5V

4.0V

3.5V

6

D

I , DRAIN-SOURCE CURRENT (A)

0

0 1 2 3 4 5

V , DRAIN-SOURCE VOLTAGE (V)

DS

3.0V

Figure 1. On-Region Characteristics.

1.8

I = 7A

D

V = 10V

GS

1.6

1.4

1.2

1

DS(ON)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

2.4

2

V = 4.0V

GS

1.6

4.5 V

5.0V

DS(ON)

1.2

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0.8
0 6 12 18 24 30

I , DRAIN CURRENT (A)

D

6.0 V

7.0V

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.15

0.12

0.09

0.06

0.03

DS(ON)

R , ON-RESISTANCE (OHM)

0

2 4 6 8 10

V , GATE TO SOURCE VOLTAGE (V)

GS

10V

I = 3A

D

T = 125°C

A

T = 25°C

A

Figure 3. On-Resistance Variation

with Temperature.

30

V = 10V

DS

25

20

15

10

D

I , DRAIN CURRENT (A)

5

0

1 2 3 4 5

Figure 5. Transfer Characteristics.

T = 125°C

J

25°C

-55°C

V , GATE TO SOURCE VOLTAGE (V)

GS

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

20

V = 0V

GS

1

T = 125°C

J

25°C

0.1

0.01

0.001

S

I , REVERSE DRAIN CURRENT (A)

0.0001
0 0.2 0.4 0.6 0.8 1 1.2

V , BODY DIODE FORWARD VOLTAGE (V)

SD

-55°C

Figure 6. Body Diode Forward Voltage

Variation with Source Current
and Temperature.

FDS8958A Rev. C