Fairchild Semiconductor FDS4465 Datasheet
March 2003
FDS4465
P-Channel 1.8V Specified PowerTrench
MOSFET
FDS4465
General Description
This P-Channel 1.8V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized f or power
management applications with a wide range of gate
drive voltage (1.8V – 8V).
Features
• –13.5 A, –20 V. R
R
R
• Fast switching speed
DS(ON)
DS(ON)
DS(ON)
= 8.5 mΩ @ VGS = –4.5 V
= 10.5 mΩ @ VGS = –2.5 V
= 14 mΩ @ VGS = –1.8 V
Applications
• Power management
• Load switch
• Battery protection
D
D
D
D
D
D
D
D
SO-8
Pin 1
SO-8
S
S
Absolute Maximum Ratings
G
G
S
S
S
S
TA=25oC unless otherwise noted
• High performance trench technology for extremely
DS(ON)
5
6
7
8
4
3
2
1
low R
• High current and power handling capability
Symbol Parameter Ratings Units
V
Drain-Source Voltage –20 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous
– Pulsed –50
PD
TJ, T
STG
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range –55 to +175
(Note 1a)
–13.5 A
(Note 1a)
2.5
(Note 1b)
(Note 1c)
±8
1.5
1.2
V
W
°C
Thermal Characteristics
R
θJA
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
50
125
25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
2003 Fairchild Semiconductor Corporation
FDS4465 FDS4465 13’’ 12mm 2500 units
°C/W
°C/W
°C/W
FDS4465 Rev C1 (W)
FDS4465
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BV
∆T
I
Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
∆V
GS(th)
∆TJ
R
DS(on)
Breakdown Voltage Temperature
DSS
Coefficient
J
Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA
Gate–Body Leakage, Revers e VGS = –8 V, VDS = 0 V –100 nA
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
On–State Drain Current VGS = –4.5 V, VDS = –5 V –50 A
D(on)
= 0 V, ID = –250 µA
V
GS
= –250 µA, Referenced to 25°C
I
D
= VGS, ID = –250 µA
V
DS
I
= –250 µA, Referenced to 25°C
D
VGS = –4.5 V, ID = –13.5 A
= –2.5 V, ID = –12 A
V
GS
= –1.8 V, ID = –10.5 A
V
GS
=–4.5 V, ID =–13.5A, TJ=125°C
V
GS
gFS Forward Transconductance VDS = –5 V, ID = –13.5 A 70 S
–20 V
–12
mV/°C
µA
–0.4 –0.6 –1.5 V
3
6.7
8.0
9.8
9.0
8.5
10.5
14
13
mV/°C
mΩ
Dynamic Characteristics
C
Input Capacitance 8237 pF
iss
C
Output Capacitance 1497 pF
oss
C
Reverse Transfer Capacitance
rss
Switching Characteristics
t
Turn–On Delay Time 20 36 ns
d(on)
(Note 2)
tr Turn–On Rise Time 24 38 ns
t
Turn–Off Delay Time 300 480 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 86 120 nC
Qgs Gate–Source Charge 20 nC
Qgd Gate–Drain Charge
= –10 V, V
V
DS
GS
f = 1.0 MHz
= –10V, ID = –1 A,
V
DD
= –4.5 V, R
V
GS
= –10 V, ID = –13.5 A,
V
DS
V
= –4.5 V
GS
GEN
= 0 V,
750 pF
= 6 Ω
140 224 ns
11 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current –2.1 A
VSD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
a) 50 °C/W when
mounted on a 1in
pad of 2 oz copper
θCA
2
VGS = 0 V, IS = –2.1 A
is determined by the user's board design.
b) 105 °C/W when
mounted on a .04 in2
pad of 2 oz copper
(Note 2)
–0.6 –1.2 V
c) 125 °C/W when mounted on a
minimum pad.
FDS4465 Rev C1 (W)
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