Fairchild Semiconductor FDS4435A Datasheet
FDS4435A
P-Channel Logic Level PowerTrenchTM MOSFET
FDS4435A
Septmeber 1999
General Description
This P-Channel Logic Level MOSFET is produced using
Fairchild Semiconductors advanced PowerTrench process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
These devices are well suited for notebook computer applications: load switching and power management, battery
charging circuits, and DC/DC conversion.
D
D
D
D
G
S
SO-8
Absolute Maximum Ratings T
S
S
= 25°C unless otherwise noted
A
Features
-9 A, -30 V. R
R
DS(ON)
DS(ON)
= 0.0175 Ω @ V
= 0.0250 Ω @ V
= -10 V
GS
= -4.5 V
GS
Low gate charge (21nC typical).
High performance trench technology for extremely
low R
DS(ON)
.
High power and current handling capability.
5
6
7
8
4
3
2
1
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
stg
Drain-Source Voltage -30 V
Gate-Source Voltage
Drain Current - Continuous (Note 1a) -9 A
- Pulsed -50
Power Dissipation for Single Operation (Note 1a) 2.5 W
(Note 1b)
(Note 1c)
Operating and Storage Junct i on Temperature Range -55 to +150
± 20
1.2
1
V
°C
Thermal Characteristics
R
JA
θ
R
JC
θ
Thermal Resistance, Junction-to-Ambient (Note 1a) 50
Thermal Resistance, Junction-to-Cas e (Note 1) 25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
FDS4435A FDS4435A 13’’ 12mm 2500 units
1999 Fairchild Semiconductor Corporation
°C/W
°C/W
FDS4435A Rev. C
FDS4435A
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BVDSS
∆T
J
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Volt age Temperature
Coefficient
Zero Gate Voltage Drain Current
= 0 V, ID = -250 µA
V
GS
= -250 µA,Referenced to 25°C
I
D
VDS = -24 V, VGS = 0 -1I
= 125°C
T
J
Gate-Body Leakage Current, For ward VGS = 20 V, VDS = 0 V 100 nA
Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -100 nA
-30 V
-26
mV/°C
-10
µA
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperatur e Coefficie nt
J
Static Drain-Source On-Resistance
V
= VGS, ID = -250 µA
DS
= -250 µA,Referenced to 25°C
I
D
VGS = -10 V, ID = -9 A 0.015 0.0185
-1 -1.7 -3 V
4.2
TJ = 125°C 0.021 0.030
= -4.5 V, ID = -7 A 0.023 0.025
V
GS
On-State Drain Current VGS = -10 V, VDS = -5 V -40 A
Forward Transconductance VDS = -10 V, ID = -9 A 25 S
mV/°C
Ω
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 2010 pF
Output Capacitance 590 pF
Reverse Transfer Capacitance
V
= -15 V, VGS = 0 V
DS
f = 1.0 MHz
260 pF
Switching Characteristics (Note 2)
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time 12 22 ns
Turn-On Rise Time 15 27 ns
= -15 V, ID = -1 A
V
DD
V
= -10 V, R
GS
GEN
= 6 Ω
Turn-Off Delay Time 100 140 ns
Turn-Off Fall Tim e
Total Gate Charge 21 30 nC
Gate-Source Charge 6 nC
V
= -15 V, ID = -9 A
DS
= -5 V,
V
GS
Gate-Drain Char ge
55 80 ns
8nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
t
rr
Notes:
1: R
θJA
drain pins. R
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Maximum Cont i nuous Drain-Sou rce Diode Forward Current -2.1 A
Drain-Sourc e Diode Forward Volta ge VGS = 0 V, IS = -2.1 A (Note 2) 0.75 -1.2 V
Source-Drain Reverse Recovery Time
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
is guaranteed by design while R
θJC
a) 50° C/W when
mounted on a 1 in
pad of 2 oz. copper.
is determined by the user's board design.
θJA
2
= -10 A, dlF/dt = 100 A/µS
I
F
b) 105° C/W when
mounted on a 0.04 in
pad of 2 oz. copper.
2
36 80 ns
c) 125° C/W when
mounted on a 0.006 in
pad of 2 oz. copper.
2
FDS4435A Rev. C
Typical Characteristics
FDS4435A
50
40
VGS = -10V
-6.0V
-5.0V
-4.5V
-4.0V
30
20
, DRAIN CURRENT (A)
D
-I
10
0
012345
, DRAIN-SOURCE VOLTAGE (V)
-V
DS
-3.5V
-3V
2.4
2.2
VGS = -3.5V
2
1.8
1.6
, NORMALIZED
1.4
DS(ON)
R
1.2
1
DRAIN-SOURCE ON-RESISTANCE
0.8
0 1020304050
-4.0V
-4.5V
-I
-5.0V
-6.0V
-7.0V
, DRAIN CURRENT (A)
D
Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage
1.6
ID = -8.8A
V
= -10V
GS
1.4
1.2
, NORMALIZ E D
1
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESIST ANCE
0.6
-50 -25 0 25 50 75 100 125 150
T
, JUNCTION TEMPERATURE (oC)
J
0.07
0.06
0.05
0.04
0.03
, ON-RESISTANCE (OHM)
0.02
DS(ON)
0.01
R
0
246810
, GATE TO SOURCE VOLTAGE (V)
-V
GS
TA = 125oC
TA = 25oC
-8.0V
-10V
ID = -4.4A
Figure 3. On-Resistance Variation
with Temperature
50
VDS = -5V
40
30
20
, DRAIN CURRENT (A)
D
-I
10
0
12345
, GATE TO SOURCE VOLTAGE (V)
-V
GS
TA = -55oC
25oC
125oC
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage
100
VGS = 0V
10
1
0.1
0.01
0.001
, REVERSE DRAI N CURRENT (A)
S
-I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4
TA = 125oC
25oC
-55oC
-V
BODY DIODE FORWARD VOLTAGE (V)
SD,
Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature
FDS4435A Rev. C
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