Fairchild Semiconductor FDS4080N7 Datasheet
May 2003
FDS4080N7
FDS4080N7
40V N-Channel FLMP PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R
in a small package.
DS(ON)
Applications
• Synchronous rectifier
• DC/DC converter
Features
• 13 A, 40 V R
• High performance trench technology for extremely
low R
• High power and current handling capability
• Fast switching (Qg = 30 nC )
• FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
DS(ON)
= 10 mΩ @ V
DS(ON)
GS
= 10 V
Bottom-side
Drain Contact
5
6
4
3
7
8
2
1
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
Symbol Parameter Ratings Units
V
Drain-Source Voltage 40 V
DSS
V
Gate-Source Voltage
GSS
± 20
V
ID Drain Current – Continuous (Note 1a) 13 A
– Pulsed 60
PD
TJ, T
STG
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range –55 to +150
(Note 1a) 3.9
W
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1a) 38
1
°C/W
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS4080N7 FDS4080N7 13’’ 12mm 2500 units
2003 Fairchild Semiconductor Corpora tion
FDS4080N7 Rev C1 (W)
FDS4080N7
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
EAS Drain-Source Avalanche Energy Single Pulse, VDD = 10V, ID=13A 200 mJ
IAS Drain-Source Avalanche Current 13 A
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V 1
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
J
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V ,VDS = 0 V –100 nA
= 0 V, ID = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
40 V
44
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
On–State Drain Current VGS = 10 V, VDS = 5 V 30 A
D(on)
= VGS, ID = 250 µA
V
DS
= 250 µA, Referenced to 25°C
I
D
VGS = 10 V, ID = 13 A
= 10 V, ID = 13 A, TJ=125°C
V
GS
gFS Forward Transconductance VDS = 5 V, ID = 13 A 41 S
2 3.9 5 V
–8
7.8
12
10
21
mV/°C
mΩ
Dynamic Characteristics
C
Input Capacitance 1750 pF
iss
C
Output Capacitance 357 pF
oss
C
Reverse Transfer Capacitance
rss
V
= 20 V, V
DS
f = 1.0 MHz
= 0 V,
GS
138 pF
Switching Characteristics (Note 2)
= 20 V, ID = 1 A,
V
t
Turn–On Delay Time 12 21 ns
d(on)
tr Turn–On Rise Time 8 17 ns
t
Turn–Off Delay Time 29 46 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 30 40 nC
Qgs Gate–Source Charge 9 nC
Qgd Gate–Drain Charge
DD
= 10 V, R
V
GS
= 20 V, ID = 13 A,
V
DS
= 10 V
V
GS
GEN
= 6 Ω
14 25 ns
10 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 3.2 A
VSD
Drain–Source Diode Forward
Voltage
= 0 V, IS = 3.2 A (Note 2) 0.7 1.2 V
V
GS
FDS4080N7 Rev C1 (W)
FDS4080N7
Electrical Characteristics T
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
is guaranteed by design while R
θJC
is determined by the user's board design.
θCA
a) 49°C/W when
mounted on a 1in
of 2 oz copper
= 25°C unless otherwise noted
A
2
pad
b) 85°C/W when mounted on
a minimum pad of 2 oz
copper
FDS4080N7 Rev C1 (W)
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