Fairchild Semiconductor FDS3912 Datasheet

FDS3912

FDS3912

100V Dual N-Channel PowerTrench MOSFET

October 2001

General Description

These N-Channel MOSFETs have been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.

These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R

specifications. The result is a MOSFET that is

DS(ON)

easy and safer to drive (even at very high frequencies),
and DC/DC power supply designs with higher overall
efficiency.

Features

• 3 A, 100 V. R
R

• Fast switching speed

• Low gate charge (14 nC typ)

• High performance trench technology for extremely

low R

DS(ON)

= 125 mΩ @ VGS = 10 V

DS(ON)

= 135 mΩ @ VGS = 6 V

DS(ON)

• High power and current handling capability

4
3
2
1

Absolute Maximum Ratings T

=25oC unless otherwise noted

A

5

Q1

6
7

Q2

8

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

STG

Drain-Source Voltage 100 V
Gate-Source Voltage ±20 V
Drain Current – Continuous (Note 1a) 3 A

– Pulsed 20
Power Dissipation for Dual Operation 2
Power Dissipation for Single Operation (Note 1a) 1.6

(Note 1b)
(Note 1c)

1.0

0.9

Operating and Storage Junction Temperature Range –55 to +175

W

°C

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient (Note 1a) 78
Thermal Resistance, Junction-to-Case (Note 1) 40

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS3912 FDS3912 13’’ 12mm 2500 units

2001 Fairchild Semiconductor Corporation

°C/W
°C/W

FDS3912 Rev C2(W)

Electrical Characteristics T

FDS3912

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Drain-Source Avalanche Ratings (Note 2)

W

DSS

I

AR

Drain-Source Avalanche Energy Single Pulse, VDD = 50 V, ID= 3 A 90 mJ
Drain-Source Avalanche Current 3.0 A

Off Characteristics

BV

DSS

∆BVDSS
∆T

I

DSS

I

GSSF

I

GSSR

Drain–Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

VGS = 0 V, ID = 250 µA
ID = 250 µA,Referenced to 25°C

100 V

108

Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 10
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA

mV/°C

µA

On Characteristics (Note 2)

V

GS(th)

∆VGS(th)
∆T

R

DS(on)

I

D(on)

g

FS

Gate Threshold Voltage
Gate Threshold Voltage

Temperature Coefficient

J

Static Drain–Source
On–Resistance

VDS = VGS, ID = 250 µA
ID = 250 µA,Referenced to 25°C

VGS = 10 V, ID = 3 A
VGS = 6 V, ID = 2.8 A
V

= 10 V, ID = 3 A, TJ = 125°C

GS

2 2.5 4 V

–6
92

98

175

On–State Drain Current VGS = 10 V, VDS = 10 V 10 A
Forward Transconductance VDS = 10V, ID = 3 A 11 S

125
135
250

mV/°C

mΩ

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 632 pF
Output Capacitance 40 pF
Reverse Transfer Capacitance

VDS = 50 V, V
f = 1.0 MHz

GS

= 0 V,

20 pF

Switching Characteristics (Note 2)

t
t
t
t
Q
Q
Q

d(on)

r

d(off)

f

g

gs

gd

Turn–On Delay Time 8.5 17 ns
Turn–On Rise Time 2 4 ns

VDD = 50 V, ID = 1 A,
VGS = 10 V, R

GEN

= 6 Ω

Turn–Off Delay Time 23 37 ns
Turn–Off Fall Time
Total Gate Charge 14 20 nC
Gate–Source Charge 2.4 nC

VDS = 50 V, ID = 3 A,
VGS = 10 V

Gate–Drain Charge

4.5 9 ns

3.8 nC

FDS3912 Rev C2(W)