Fairchild Semiconductor FDS3890 Datasheet
FDS3890
80V N-Channel Dual Powe rTre nch
MOSFET
FDS3890
February 2001
General Description
This N-Channel MOSFET has been designed
specifically to i mprove the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM c ontrollers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
specifications. The result is a MOSFET that is
R
DS(ON)
easy and safer to drive (even at very high frequenc ies),
and DC/DC power supply designs with higher overall
efficiency.
Features
4.7 A, 80 V. R
R
• Fast switching speed
• High performance trench te chnology for extremely
DS(ON)
low R
• High power and current handling capability
= 44 mΩ @ VGS = 10 V
DS(ON)
= 50 mΩ @ VGS = 6 V
DS(ON)
D1
D1
D2
D2
G1
S2
S1
G2
SO-8
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
5
Q1
6
7
Q2
8
4
3
2
1
Symbol Parameter Ratings Units
V
Drain-Source Voltage 80 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1a) 4.7 A
– Pulsed 20
PD
TJ, T
STG
Power Dissipation for Dual Operation 2
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b)
Operating and Storage Junction Temperature Range –55 to +175
(Note 1c)
± 20
1.0
0.9
V
W
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a) 78
(Note 1) 40
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
2001 Fairchild Semiconductor Corporation
FDS3890 FDS3890 13’’ 12mm 2500 units
°C/W
°C/W
FDS3890 Rev B(W)
FDS3890
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
W
Single Pulse Drain-Source
DSS
VDD = 40 V, ID = 4.7 A 175 mJ
Avalanche Energy
IAR Maximum Drain-Source Avalanche
4.7 A
Current
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V 1
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
J
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA
= 0 V, ID = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
80 V
86
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
On–State Drain Current VGS = 10 V, VDS = 5 V 20 A
D(on)
= VGS, ID = 250 µA
V
DS
I
= 250 µA, Referenced to 25°C
D
VGS = 10 V, ID = 4.7 A
= 6.0 V, ID = 4.4 A
V
GS
= 10 V, ID = 4.7 A, TJ = 125°C
V
GS
gFS Forward Transconductance VDS = 10 V, ID = 4.7 A 24 S
2 2.3 4 V
–6
34
37
60
44
50
82
mV/°C
mΩ
Dynamic Characteristics
C
Input Capacitance 1180 pF
iss
C
Output Capacitance 171 pF
oss
C
Reverse Transfer Capacitance
rss
= 40 V, V
V
DS
f = 1.0 MHz
= 0 V,
GS
50 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 11 20 ns
d(on)
tr Turn–On Rise Time 8 16 ns
t
Turn–Off Delay Time 26 50 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 25 35 nC
Qgs Gate–Source Charge 4.5 nC
Qgd Gate–Drain Charge
=40 V, ID = 1 A,
V
DD
= 10 V, R
V
GS
V
= 40 V, ID = 4.7 A,
DS
V
= 10 V
GS
GEN
= 6 Ω
12 25 ns
5.8 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 1.3 A
VSD
Notes:
1. R
θJA
the drain pins. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Drain–Source Diode Forward
Voltage
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
is guaranteed by design while R
θJC
a) 78°C/W when
mounted on a 1in2
pad of 2 oz copper
θCA
V
= 0 V, IS = 1.3 A (Note 2) 0.74 1.2 V
GS
is determined by the user's board design.
b) 125°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 135°C/W when mounted on a
minimum pad.
FDS3890 Rev B(W)
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