Fairchild Semiconductor FDS3690 Datasheet

FDS3690

100V N-Channel PowerTrench MOSFET

FDS3690

February 2000

PRELIMINARY

General Description

This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/ DC
converters using either synchronous or conventional
switching PWM controller s .

These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable

specifica tions. The result is a MOSFET that is

R

DS(ON)

easy and safer to drive (even at very high frequencies),
and DC/DC power supply designs with higher overall
efficiency.

Applications

DC/DC converter

•

Motor Driver

•

D

D

D

D

G

S

SO-8

Absolute Maximum Ratings

S

S

TA=25oC unless otherwise noted

Features

5 A, 100 V. R

•

Fast switching speed.

•

Low gate charge

•

High performance trench technology for extremely

•

low R

DS(ON)

High power and current handling capability.

•

5
6
7
8

= 0.059 Ω @ VGS = 10 V

DS(ON)

= 0.066 Ω @ VGS = 6 V

R

DS(ON)

4
3
2
1

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

STG

Drain-Source Voltage 100 V
Gate-Source Voltage
Drain Current – Continuous

(Note 1a)

20

±

5A

– Pulsed 40

Power Dissipation for Single Operation

(Note 1a)
(Note 1b)
(Note 1c)

2.5

1.2

1.0

Operating and Storage Junction Temperature Range -55 to +150

V

W

C

°

Thermal Characteristics

R

JA

θ

R

JC

θ

Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

50
25

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS3690 FDS3690 13’’ 12mm 2500 units

1999 Fairchild Semiconductor Corpor ation



C/W

°

C/W

°

FDS3690 Rev B(W)

FDS3690

Electrical Characteristics

TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

∆
∆

I

DSS

I

GSSF

I

GSSR

DSS

BV

T

Drain–Source Breakdown Voltage
Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 25
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA

On Characteristics

V

∆
∆

R

I

D(on)

g

GS(th)

GS(th)

V

T

DS(on)

FS

Gate Threshold Voltage
Gate Threshold Voltage

Temperature Coefficient

J

Static Drain–Source
On–Resistance

On–State Drain Current VGS = 10 V, VDS = 5 V 20 A
Forward Transconductance VDS = 5 V, ID = 5 A 20 S

[JK3]

(Note 2)

V

= 0 V, ID = 250 µA

GS

I

= 250 µA, Referenced to 25°C

D

V

= VGS, ID = 250 µA

DS

I

= 250 µA, Referenced to 25°C

D

VGS = 10 V, ID = 5A

= 10 V, ID = 5A

V

GS

V

= 6 V, ID = 4.4 A

GS

=125°C

T

J

100 V

78

mV/°C

A

µ

22.44 V
–6.2

0.044

0.088

0.047

0.059

0.130

0.066

mV/°C

Ω

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 1514 pF
Output Capacitance 82 pF
Reverse Transfer Capacitance

= 50 V, V

V

DS

f = 1.0 MHz

GS

= 0 V,

44 pF

Switching Characteristics

t
t
t
t
Q
Q
Q

d(on)

r

d(off)

f

g

gs

gd

Turn–On Delay Time 11 20 ns
Turn–On Rise Time 6.5 15 ns
Turn–Off Delay Time 29 60 ns
Turn–Off Fall Time
Total Gate Charge 28 39 nC
Gate–Source Charge 6.2 nC
Gate–Drain Charge

(Note 2)

V

= 50 V, ID = 1 A,

DD

= 10 V, R

V

GS

= 50 V, ID = 5 A,

V

DS

= 10 V

V

GS

GEN

= 6

Ω

10 20 ns

5.4 nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

R

1.

JA

θ

the drain pins. R

Scale 1 : 1 on letter size paper

Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

2.

Maximum Continuous Drain–Source Diode Forward Current 2.1 A
Drain–Source Diode Forward

VGS = 0 V, IS = 2.1 A

(Note 2)

0.73 1.2 V

Voltage

is guaranteed by design while R

JC

θ

a) 50°/W when

mounted on a 1in
pad of 2 oz copper

is determined by the user's board design.

CA

θ

2

b) 105°/W when

mounted on a .04 in
pad of 2 oz copper

2

c) 125°/W when mounted on a

minimum pad.

FDS3690 Rev B(W)

Typical Characteristics

FDS3690

35

30

25

20

15

10

, DRAIN CURRENT (A)

D

I

5

0

01234

VGS = 10V

, DRAIN-SOURCE VOLTAGE (V)

V

DS

5.0V

4.5V

4.0V

3.5V

1.6

VGS = 4.0V

1.4

1.2

, NORMALIZED

DS(ON)

R

1

DRAIN-SOURCE ON-RESISTANCE

0.8
0 5 10 15 20 25 30 35

4.5V

5.0V

6.0V

I

, DRAIN CURRENT (A)

D

10V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

2.4
ID = 5A

2.2

V

= 10V

GS

2

1.8

1.6

1.4

, NORMALIZED

1.2

1

DS(ON)

R

0.8

0.6

DRAIN-SOURCE ON-RESISTANCE

0.4

-50 -25 0 25 50 75 100 125 150

T

, JUNCTION TEMPERATURE (oC)

J

0.15

0.12

0.09

0.06

, ON-RESISTANCE (OHM)

0.03

DS(ON)

R

0

2345678910

, GATE TO SOURCE VOLTAGE (V)

V

GS

TA = 125oC

TA = 25oC

ID = 5 A

Figure 3. On-Resistance Variation

withTemperature.

35

VDS = 5V

30

25

20

15

10

, DRAIN CURRENT (A)

D

I

5

0

22.533.544.55

125oC

25oC

TA = -55oC

, GATE TO SOURCE VOLTAGE (V)

V

GS

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

I

0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4

TA = 125oC

o

25

-55oC

, BODY DIODE FORWARD VOLTAGE (V)

V

SD

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS3690 Rev B(W)