Fairchild Semiconductor FDS3672 Datasheet

FDS3672

N-Channel PowerTrench® MOSFET
100V, 7.5A, 22mΩ

FDS3672

March 2003

Features

•r

•Q

• Low Miller Charge

•Low Q

• Optimized eff iciency at high frequ encies

• UIS Capability (Single Pulse and Repetitive Pulse)

= 19mΩ (Typ.), V

DS(ON)

(tot) = 28nC (Typ.), V

g

Body Diode

RR

= 10V, ID = 7.5A

GS

= 10V

GS

Applications

• DC/DC converters and Off-Line UPS

• Distributed Pow er Architectures and VRMs

• Primary Switch for 24V and 48V Systems

• High Voltage Synchronous Re ctifier

• Direct Injection / Diesel Injection Systems

• 42V Automotive Lo ad Control

Formerly developmental type 82763

Branding Dash

1

2

3

4

5

• Electronic Valve T rain System s

5
6
7
8

SO-8

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DSS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
Drain Curr e nt
Continuous (T
Continuous (T

= 25oC, VGS = 10V, R

A

= 100oC, VGS = 10V, R

A

Pulsed Figure 4 A
Single Pulse Avalanche Energy (Note 1) 416 mJ
Power dissipation 2.5 W

o

Derate above 25

C20mW/

Operating and Storage Temperature -55 to 150

= 25°C unless otherwise noted

A

= 50oC/W)

θJA

= 50oC/W) 4.8 A

θJA

7.5 A

4
3
2
1

o

C

o

C

Thermal Characteristics

R

θJA

R

θJA

R

θJC

Thermal Resis tan ce , Ju nc tion to Ambi en t at 10 se co nds (Note 3) 50
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) 85
Thermal Resis tan ce , Ju nc tio n t o Cas e (Note 2) 25

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDS367 2 FDS3672 SO-8 330mm 12mm 2500 un its

©2003 Fairchild Semiconductor Corporation

o

C/W

o

C/W

o

C/W

FDS3672 Rev. B

FDS3672

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B
I

DSS

I

GSS

VDSS

Drain t o Source Breakdown Volta ge ID = 250µA, VGS = 0V 100 - - V

V

= 80V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150oC- - 250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2-4V

Drain to Source On Resistance

= 7.5A, V

I

D

I

= 6.8A, VGS = 6V - 0.023 0.028

D

= 7.5A, V

I

D

T

= 150oC

C

= 10V - 0.019 0.023

GS

= 10V,

GS

- 0.035 0.043

Dynamic Characteristics

C
C
C
Q
Q
Q
Q
Q

ISS
OSS
RSS

g(TOT)
g(TH)
gs
gs2
gd

Input Capacitance
Output Capacitance - 285 - pF
Reverse Transfer Capacitance - 70 - pF

= 25V, VGS = 0V,

V

DS

f = 1MHz

Total G ate Ch arg e at 10 V VGS = 0V to 10V
Threshold Gate Charge VGS = 0V to 2V - 4 6 nC
Gate to Source Gate Charge - 10 - nC
Gate Charge Threshold to Plateau - 6.8 - nC

V

DD

I

= 7.5A

D

I

= 1.0m A

g

= 50V

Gate to Drain “Miller” Charge - 6 - nC

-2015- pF

-2837nC

µA

Ω

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time
T urn-On Delay Time - 14 - ns
Rise Time - 20 - ns
T u rn-Off Delay Time - 37 - ns
Fall Time - 27 - ns
Turn-Off Time - - 96 ns

(VGS = 10V)

V

= 50V, ID = 4A

DD

V

= 10V, RGS = 10Ω

GS

--51ns

Drain-Source Diode Characteristics

I

= 7.5A - - 1.25 V

V

SD

t

rr

Q

RR

Notes:
1: Starting TJ = 25°C, L = 13mH, IAS = 8A.
2: R

θJA

drain pins. R

3: R

θJA

Source to Drain Di ode Voltage
Reverse Recovery Time ISD= 7.5A, dISD/dt= 100A/µs- - 55ns

Reverse Recovered Charge ISD= 7.5A, dISD/dt= 100A/µs- - 90nC

is the sum of the junction-to-case and cas e-to-a mbient thermal r esistance wher e the case thermal reference is defined as the solder mounting su rface of the
is measured with 1.0 in2 copper on FR-4 board

is guaranteed by design while R

θJC

is determined by the user’s board design.

θCA

SD

I

= 4A - - 1.0 V

SD

©2003 Fairchild Semiconductor Corporation FDS3672 Rev . B

FDS3672

Typical Characteristics T

= 25°C unless otherwise noted

A

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TA, AMBIENT TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

1

0.5

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

0.01

θJA

Z

THERMAL IMPEDANCE

0.001

-5

10

SINGLE PULSE

-4

10

-3

10

8

6

4

, DRAIN CURRENT (A)

D

2

I

0

125

25 50 75 100 125 150

Figure 2. Maximum Continuous Drain Curr ent vs

-2

10

t, RECTANGULAR PULSE DURATION (s)

-1

10

10

TC, CASE TEMPERATURE (oC)

Case Temperature

NOTES:
DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

0

1

10

V

= 10V

GS

R

=50oC/W

θJA

P

DM

t

1

t

2

2

x R

+ T

θJA

θJA

A

2

10

3

10

Figure 3. Normalized Maximum Transient Thermal Impedance

1000

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

VGS = 10V

100

, PEAK CURRENT (A)

DM

I

10

5

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

t, PULSE WIDTH (s)

TA = 25oC
FOR TEMPERATURES

ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:

150 - T

I = I

25

1

10

2

10

125

C

3

10

Figure 4. Peak Current Capability

©2003 Fairchild Semiconductor Corporation FDS3672 Rev . B

Typical Characteristics T

= 25°C unless otherwise noted

A

FDS3672

300
100

10

1

, DRAIN CURRENT (A)

D

I

0.1

0.01

OPERATION IN THIS

AREA MAY BE

LIMITED BY r

SINGLE PULSE
TJ = MAX R ATED

TC = 25oC

DS(ON)

1.0 10.0 100

VDS, DRAIN TO SOURCE VOLTAGE (V)

10µs

100µs

1ms
10ms

100ms

1s

Figure 5. Forward Bias Safe Operating Area

30

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

V

= 15V

DD

20

TJ = 150oC

30

If R = 0
tAV = (L)(IAS)/(1.3*RATED BV

If R ≠ 0

= (L/R)ln[(IAS*R)/(1.3*RATED BV

t

AV

10

, AVALANCHE CURRENT (A)

AS

I

STARTING TJ = 150oC

1

3000.1

0.01 0.1 1 10 100
tAV, TIME IN AVALANCHE (ms)

DSS

- VDD)

DSS

- VDD) +1]

ST ARTING TJ = 25oC

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

30

VGS = 10V

20

VGS = 6V

VGS = 5V

10

, DRAIN CURRENT (A)

D

I

0

2.53.03.54.04.55.05.5

TJ = 25oC

TJ = -55oC

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics

24

VGS = 6V

22

20

VGS = 10V

DRAIN TO SOURCE ON RESISTANCE (m Ω)

18

02468

ID, DRAIN CURRENT (A)

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

Figure 9. Drain to So urce On Resistanc e v s Drai n

Current

10

, DRAIN CURRENT (A)

D

I

0

0 0.5 1.0 1.5 2.0

2.0

1.5

1.0

ON RESISTANCE

NORMALIZED DRAIN TO SOURCE

0.5

VDS, DRAIN TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

-80 -40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)

TA = 25oC

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

VGS = 4.5V

VGS = 10V, ID = 7.5A

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature

©2003 Fairchild Semiconductor Corporation FDS3672 Rev . B