Fairchild Semiconductor FDS3670 Datasheet

FDS3670

100V N-Channel PowerTrench MOSFET

FDS3670

January 2000

PRELIMINARY

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/ DC converters using either synchronous or conventional switching PWM controller s .

Features

6.3 A, 100 V. R

•

Low gate charge (57 nC typical).

•

= 0.030 Ω @ VGS = 10 V

DS(ON)

R

= 0.033 Ω @ VGS = 6 V.

DS(ON)

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable

specifications.

R

DS(ON)

The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

D

Fast switching speed

•

High performance trench technology for extremely

•

DS(ON)

.

5

4

low R

High power and current handling capability.

•

D

G

S

SO-8

S

Absolute Maximum Ratings

TA=25oC unless otherwise noted

6

7 8

3

2 1

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

STG

Drain-Source Voltage 100 V Gate-Source Voltage Drain Current – Continuous

(Note 1a)

20

±

6.3 A

– Pulsed 50

Power Dissipation for Single Operation

(Note 1a) (Note 1b)

(Note 1c)

2.5

1.2

1.0

Operating and Storage Junction Temperature Range -55 to +150

V

W

C

°

Thermal Characteristics

R

JA

θ

R

JC

θ

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

50 25

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS3670 FDS3670 13’’ 12mm 2500 units

1999 Fairchild Semiconductor Corpor ation



C/W

°

C/W

°

FDS3670 Rev B1 (W)

FDS3670

Electrical Characteristics

TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics

BV

DSS

BV

∆

T

∆

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

V

∆

T

∆

R

DS(on)

I

D(on)

g

FS

Drain–Source Breakdown Voltage Breakdown Voltage Temperature

DSS

Coefficient

J

V

= 0 V, ID = 250 µA

GS

I

= 250 µA,Referenced to 25°C

D

100 V

92

Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 25 Gate–Body Leakage Current,

VGS = 20 V, VDS = 0 V 100 nA Forward Gate–Body Leakage Current,

VGS = –20 V VDS = 0 V –100 nA Reverse

(Note 2)

Gate Threshold Voltage Gate Threshold Voltage

Temperature Coefficient

J

Static Drain–Source On–Resistance

V

= VGS, ID = 250 µA

DS

= –250 µA,Referenced to 25°C

I

D

VGS = 10 V, ID = 6.3 A

= 10 V, ID = 6.3 A

V

GS

= 6 V, ID = 5.7 A

V

GS

= 125°C

T

J

22.54 V –7.2

0.022

0.039

0.024

On–State Drain Current VGS = 10 V, VDS = 5 V 25 A Forward Transconductance VDS = 5 V, ID = 6.3 A 31 S

0.030

0.060

0.033

mV/°C

A

µ

mV/°C

Ω

Dynamic Characteristics

= 50 V, V

C

iss

C

oss

C

rss

Input Capacitance 2490 pF Output Capacitance 265 pF Reverse Transfer Capacitance

V

DS

f = 1.0 MHz

GS

= 0 V,

80 pF

Switching Characteristics

t t t t Q Q Q

d(on)

r

d(off)

f

g

gs

gd

Turn–On Delay Time 16 26 ns Turn–On Rise Time 10 18 ns Turn–Off Delay Time 56 84 ns Turn–Off Fall Time Total Gate Charge 57 80 nC Gate–Source Charge 11 nC Gate–Drain Charge

(Note 2)

V

= 50 V, ID = 1 A,

DD

= 10 V, R

V

GS

V

= 50 V, ID = 25 A,

DS

= 10 V

V

GS

GEN

= 6

Ω

25 40 ns

15 nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

R

1.

JA

θ

the drain pins. R

Scale 1 : 1 on letter size paper

Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

2.

Maximum Continuous Drain–Source Diode Forward Current 2.1 A Drain–Source Diode Forward

VGS = 0 V, IS = 2.1 A

(Note 2)

0.72 1.2 V

Voltage

is guaranteed by design while R

JC

θ

a) 50 °C/W when

mounted on a 1in pad of 2 oz copper

is determined by the user's board design.

CA

θ

2

b) 105 °C/W when

mounted on a 0.04 in2 pad of 2 oz copper

c) 125 °C/W when mounted on a

minimum pad.

FDS3670 Rev B1 (W)

Typical Characteristics

FDS3670

60

50

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

VGS = 10V

5.5V

012345

5.0V

4.5V

V

, DRAIN-SOURCE VOLTAGE (V)

DS

4.0V

3.5V

2

1.8

1.6

1.4

, NORMALIZE D

1.2

DS(ON)

R

1

DRAIN-SOURCE ON-R ESI ST ANC E

0.8

VGS = 4.0V

4.5V

5.0V

5.5V

7.0V

0 102030405060

I

, DIRAIN CURRENT (A)

D

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

2.2 ID = 7.2A

2

= 10V

V

GS

1.8

1.6

1.4

1.2

, NORMALIZE D

1

DS(ON)

R

0.8

0.6

DRAIN-SOURCE ON-RESISTANCE

0.4

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMP ERA T URE (oC)

T

J

0.06

)

0.05

Ω

0.04

0.03

0.02

, ON-RESISTANCE (

DS(ON)

R

0.01

0

345678910

V

, GATE TO SOURCE VOLTAGE (V)

GS

TA = 125oC

TA = 25oC

10V

ID = 3.6A

Figure 3. On-Resistance Variation

withTemperature.

60

VDS = 5V

50

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

23456

125oC

25oC

TA = -55oC

V

, GATE TO SOURCE VOLTAGE (V)

GS

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

I

0.0001 0 0.2 0.4 0.6 0.8 1 1.2

TA = 125oC

25oC

-55oC

, BODY DIODE FORWARD VOLTAGE (V)

V

SD

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS3670 Rev B1 (W)

Fairchild Semiconductor FDS3670 Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual