Fairchild Semiconductor FDP038AN06A0, FDI038AN06A0 Datasheet

FDP038AN06A0 / FDI038AN06A0

N-Channel PowerTrench® MOSFET
60V, 80A, 3.8mΩ

FDP038AN06A0 / FDI038AN06A0

August 2002

Features

•r

•Q

• Low Miller Charge

•Low Q

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

Formerly developmental type 82584

(FLANGE)

MOSFET Maximum Ratings T

= 3.5mΩ (Typ.), V

DS(ON)

(tot) = 95nC (Typ.), V

g

Body Diode

RR

DRAIN

TO-220AB

FDP SERIES

= 10V, ID = 80A

GS

= 10V

GS

SOURCE

DRAIN

GATE

= 25°C unless otherwise noted

C

DRAIN

(FLANGE)

Applications

• Motor / Body Load Control

• ABS Systems

• Powertrain Management

• Injection Syste m s

• DC-DC converter s and Off-line UPS

• Distributed P ower Arc hitectures and VRMs

• Primary Switch for 12V and 24V systems

SOURCE

TO-262AB

FDI SERIES

DRAIN

GATE

D

G

S

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Sou r c e Voltage 60 V
Gate to Source Voltage ±20 V
Drain Curr e nt

I

D

Continuous (T
Continuous (T

< 151oC, VGS = 10V)

C

= 25oC, VGS = 10V, with R

amb

= 62oC/W) 17 A

θJA

80 A

Pulsed Figure 4 A

E

AS

P

D

, T

T

J

STG

Single Pulse Avalanche Energy (Note 1) 625 mJ
Power dissipation 310 W
Derate above 25

o

C2.07W/

Operating and Storage Temperature -55 to 175

o

C

o

C

Thermal Charact eristics

R

θJC

R

θJA

This product has been designed to meet the extreme test conditions and environment demanded by the automotive

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality

©2002 Fairchild Semiconductor Corporation

Thermal Resistance Junction t o Case TO-220, TO-262 0.48
Thermal Resistance Junction t o Ambient TO-220, TO-262 (Note 2) 62

industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

systems certification.

FDP038AN06A0 / FDI038AN06A0 Rev. A1

o

C/W

o

C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDP038AN06A0 FDP038AN06A0 TO-220AB Tube N/A 50 units

FDI038A N06A0 FDI038A N06A0 TO- 262AB Tube N/A 50 unit s

FDP038AN06A0 / FDI038AN06A0

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Con ditions Min Typ Max Units

Off Characteristics

B
I

DSS

I

GSS

VDSS

Drain to Sou r c e Br ea k down Volt ag e ID = 250µA, VGS = 0V 60 - - V

V

= 50V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150oC- -250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2-4V

I

= 80A, VGS = 10V - 0.0035 0.0038

D

I

= 40A, VGS = 6V - 0.0049 0.0074

Drain to S ou r c e On Re si st ance

D

= 80A, VGS = 10V,

I

D

T

= 175oC

J

- 0.0071 0.0078

Dynamic Characteristics

C
C
C
Q
Q
Q
Q
Q

ISS
OSS
RSS

g(TOT)
g(TH)
gs
gs2
gd

Input Capacitance
Output Capacitance - 1123 - pF
Reverse Transfer Capacitance - 367 - pF

= 25V, VGS = 0V,

V

DS

f = 1MHz

Total Gate Charge at 10V VGS = 0V to 10V
Threshold Gate Charge VGS = 0V to 2V - 12 15 nC
Gate to Source Gate Charg e - 30 - nC
Gate Charge Threshold to Plateau - 18 - nC

V

DD

I

= 80A

D

I

= 1.0m A

g

= 30V

Gate to Drain “Miller” Charge - 24 - nC

- 6400 - pF

95 124 nC

µA

Ω

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time
Turn-On Delay Time - 15 - ns
Rise Time - 93 - ns
Turn-Off D elay Time - 38 - ns
Fall Time - 13 - ns
Turn-Off Time - - 75 ns

(VGS = 10V)

V

= 30V, ID = 80A

DD

V

= 10V, RGS = 2.4Ω

GS

--163ns

Drain-Source Diode Characteristics

I

= 80A - - 1 .2 5 V

V

SD

t

rr

Q

RR

Notes:
1: Starting T
2: Pulse Width = 100s

©2002 Fairchild Semiconductor Corporation FDP038AN06A0 / FDI038AN06A0 Rev. A1

Source to Drain Diode Voltage
Reverse Recovery Time ISD = 75A, dISD/dt = 100A/µs- -38ns

Reverse Recovered Charge ISD = 75A, dISD/dt = 100A/µs- -39nC

= 25°C, L = 0.255mH, IAS = 70A.

J

SD

I

= 40A - - 1.0 V

SD

FDP038AN06A0 / FDI038AN06A0

Typical Characteristics T

= 25°C unless otherwise noted

C

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0255075100 175

125

TC, CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE

-4

10

10

250

200

150

100

, DRAIN CURRENT (A)

D

I

50

0

150

25 50 75 100 125 150 175

Figure 2. Maximum Continuous Drain Curr ent vs

-3

t, RECTANGULAR PULSE DURATION (s)

-2

10

CURRENT LIMITED
BY PACKAGE

TC, CASE TEMPERATURE (oC)

Case Temperature

P

DM

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

-1

10

1/t2

θJC

0

10

x R

θJC

t

+ T

1

t

2

C

1

10

Figure 3. Normalized Maximum Transient Thermal Impedance

3000

TRANSCONDUCTANCE
MAY LIMIT CURRENT

1000

IN THIS REGION

VGS = 10V

100

, PEAK CURRENT (A)

DM

I

10

-5

10

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

TC = 25oC
FOR TEMPERATURES

o

ABOVE 25

C DERATE PEAK

CURRENT AS FOLLOWS:

175 - T

I = I

25

10

C

150

0

1

10

Figure 4. Peak Current Capability

©2002 Fairchild Semiconductor Corporation FDP038AN06A0 / FDI038AN06A0 Rev. A1