Fairchild Semiconductor FDH400, FDLL400 Datasheet
FDH/FDLL 400
FDH400 / FDLL400
COLOR BAND MARKING
2ND BAND
VIOLET
DO-35
THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL
LL-34
DEVICE
FDLL400
1ST BAND
BROWN
High Voltage General Purpose Diode
Sourced from Process 1J. See MMBD1401-1405 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
W
IV
I
O
I
F
i
f
i
f(surge)
T
stg
T
J
Working Inverse Vol tage
FDH/FDLL400
Average Rectified Current 200 mA
DC Forward Current 500 mA
Recurrent Peak Forward Current 600 mA
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range -65 to +200
Operating Junction Temperature 175
150 V
1.0
4.0
A
A
°
C
°
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
FDH/FDLL 400
P
D
R
θ
JA
1997 Fairchild Semiconductor International
Total Device Dissipation
Derate above 25°C
500
3.33
Thermal Resistance, Junc tion to Ambient 300
mW
mW/°C
°
C/W
High Voltage General Purpose Diode
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
B
V
I
R
V
F
C
O
T
RR
Breakdown Voltage
Reverse Current
Forward Voltage
Diode Capacitance
FDH/FDLL400
FDH/FDLL400
FDH/FDLL400
FDH/FDLL400
Reverse Recovery Time
FDH/FDLL400
= 100 µA
I
R
= 150 V
V
R
= 150 V, TA = 150°C
V
R
= 200 mA
I
F
= 300 mA
I
F
V
= 0, f = 1.0 MHz 2.0 pF
R
= IR = 30 mA, I
I
F
R
= 100
L
Ω
= 3.0 mA,
rr
200 V
100
nA
100
1.0
1.1
V
V
50 nS
µ
A
FDH400 / FDLL400
Loading...