Fairchild Semiconductor FDH3595 Datasheet
FDH3595
DO-35
High Conductance Low Leakage Diode
Sourced from Process 1M. See MMBD1501-1505 for characteristics.
FDH3595
Discrete POWER & Signal
Technologies
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
W
IV
I
O
I
F
i
f
i
f(surge)
T
stg
T
J
Working Inverse Voltage 125 V
Average Rectified Current 200 mA
DC Forward Current 500 mA
Recurren t Peak Forward Current 600 mA
Peak Forward Surge Current
Storage Temperature Range -65 to +175
Operating Junction Temperature 175
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
1.0
4.0
A
A
°
°
C
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
MMBD7000*
P
D
R
θ
JA
Total Dev ice Dissipation
Derate above 25°C
Thermal Resistan ce, Junction to Ambient 300
500
3.33
mW
mW/°C
C/W
°
ã 1997 Fairchild Semiconductor Corporation
µ
High Conductance Low Leakage Diode
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
B
V
I
R
V
F
C
T
Breakdown Voltage
I
= 100 µA
R
Reverse Voltage Leakage Current VR = 125 V
V
= 30 V, TA = 125°C
R
V
= 125 V, TA = 125°C
R
V
= 125 V, TA = 150°C
R
Forward Voltage IF = 1.0 mA
= 5.0 mA
I
F
I
= 10 mA
F
I
= 50 mA
F
I
= 100 mA
F
I
= 200 mA
F
150 V
1.0
300
500
3.0
520
600
650
750
790
0.83
680
760
800
890
920
1.0
nA
nA
nA
mV
mV
mV
mV
mV
Diode Capacitance VR = 0, f = 1.0 MHz 8.0 pF
A
V
FDH3595
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