Fairchild Semiconductor BAV21, BAV20, BAV19 Datasheet
BAV19 / 20 / 21
DO-35
High Voltage General Purpose Diode
Sourced from Process 1J.
BAV19 / BAV20 / BAV21
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
W
IV
I
O
I
F
i
f
i
f(surge)
T
stg
T
J
Working Inverse Voltage
Average Rectified Current 200 mA
DC Forward Current 500 mA
Recurren t Peak Forward Current 600 mA
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range -65 to +200
Operating Junction Temperature 175
BAV19
BAV20
BAV21
100
150
200
1.0
4.0
V
V
V
A
A
°
°
C
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
BAV19 / 20 / 21
P
D
R
θ
JA
Total Dev ice Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient300
500
3.33
mW
mW/°C
C/W
°
2000 Fairchild Semiconductor International BAV19/20/21, Rev. A
µ
µ
µ
High Voltage General Purpose Diode
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
B
V
I
R
V
F
C
O
T
RR
Breakdown Voltage
Reverse Current
BAV19
BAV20
BAV21
BAV19
BAV20
BAV21
I
= 100 µA
R
I
= 100 µA
R
I
= 100 µA
R
VR = 100 V
V
= 100 V, TA = 150°C
R
V
= 150 V
R
V
= 150 V, TA = 150°C
R
= 200 V
V
R
V
= 200 V, TA = 150°C
R
Forward Voltage IF = 100 mA
I
= 200 mA
F
Diode Capacitance VR = 0, f = 1.0 MHz 5.0 pF
Reverse Recovery Time IF = IR = 30 mA, IRR = 3.0 mA,
R
= 100
Ω
L
120
200
250
100
100
100
100
100
100
1.0
1.25
50 nS
V
V
V
nA
A
nA
A
nA
A
V
V
Typical Characteristics
BAV19 / BAV20 / BAV21
BAV19 / BAV20 / BAV21
REVERSE VOLTAGE vs REVERSE CURRENT
BV - 1.0 to 100 uA
325
Ta= 25°C
300
R
R
V
V - REVERSE VOLTAGE (V)
275
3 5 10 20 30 50 100
I - REVERSE CURRENT (uA)
R
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 180 to 255 V
100
Ta= 25°C
90
80
70
60
50
40
30
20
R
R
I
I - REVERSE CURRENT (nA)
180 200 220 240
GENERAL RULE: The Reverse Current of a diode will approximately
V - REVERSE VOLTAGE (V)
R
double for every ten Degree C increase in Temperature
255
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 55 to 205 V
50
Ta= 25°C
40
30
20
10
0
R
R
I
I - REVERSE CURRENT (nA)
55 75 95 115 135 155 175 195
GENERAL RULE: The Reverse Current of a diode will approximately
V - REVERSE VOLTAGE (V)
R
double for every ten (10) Degree C increase in Temperature
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 1.0 to 100 uA
Ta= 25°C
450
400
350
300
250
F
F
V
V - FORWARD VOLTAGE (mV)
1 2 3 5 10 20 30 50 100
F
I - FORWARD CURRENT (uA)
Typical Characteristics (continued)
BAV19 / BAV20 / BAV21
High Voltage General Purpose Diode
(continued)
FORWARD VOLTAGE vs FORWARD CURRENT
725
Ta= 25°C
700
650
600
550
500
F
F
V
V - FORWARD VOLTAGE (mV)
450
0.1 0.2 0.3 0.5 1 2 3 5 10
VF - 0.1 to 10 mA
F
I - FORWARD CURRENT (mA)
Forward Voltage vs Ambient Temperature
VF - 1.0 uA - 10 mA (-40 to + 80 Deg C)
800
600
400
200
F
F
V
V - FORWARD VOLTAGE (mV)
0.001 0.003 0.01 0.03 0.1 0.3 1 3 10
I
F
I - FORWARD CURRENT (mA)
F
Ta= -40°C
Ta= 25°C
Ta= +80°C
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 10 to 800 mA
1.4
Ta= 25° C
1.3
1.2
1.1
1
0.9
0.8
F
F
V
V - FORWARD VOLTAGE (mV)
0.7
10 20 30 50 100 200 300 500
I - FORWARD CURRENT (mA)
F
800
CAPACITANCE vs REVERSE VOLTAGE
VR - 0 to 15 V
1.3
Ta= 25°C
1.2
1.1
1
CAPACITANCE (pF)
0.9
0.8
0 2 4 6 8 10 12 14
REVERSE VOLTAGE (V)
15
REVERSE RECOVERY TIME vs
REVERSE RECOVERY CURRENT (Irr)
50
40
30
IF = IR = 30 mA
REVERSE RECOVERY (nS)
Rloop = 100 Ohms
20
11.522.53
Irr - REVERSE RECOVERY CURRENT ( m A)
Average Rectified Current (Io) &
Forward Current (I ) versus
Ambient Temperature (T )
500
400
300
200
I - CURRENT (mA)
100
0
050100150
I - FORWARD CURRENT STEADY STATE - mA
R
Io - AVERAGE RECTIFIED CURRENT - mA
T - AMBIENT TEMPERATURE ( C)
A
F
A
o
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