Fairchild Semiconductor 74F1071SCX, 74F1071SC, 74F1071MTCX, 74F1071MTC, 74F1071MSAX Datasheet

© 1999 Fairchild Semiconductor Corporation DS011685 www.fairchildsemi.com

October 1994
Revised August 1999

74F1071 18-Bit Undershoot/Overshoot Clamp

74F1071
18-Bit Undershoot/Overshoot Clamp

and ESD Protection Device

General Description

The 74F1071 is an 18-bit undershoot/overshoot clamp
which is designed to limit bus volt ages and also to prot ect
more sensitive devices from electrical overstress due to
electrostatic discharge (ESD). The inputs of the device
aggressively clamp vo ltage excursions nominally at 0.5V
below and 7V above ground.

Features

■ 18-bit array structure in 20-pin package

■ FAST Bipolar voltage clamping action

■ Dual center pin grounds for min inductance

■ Robust design for ESD protection

■ Low input capacitance

■ Optimum voltage clamping for 5V CMOS/TTL

applications

Ordering Code:

Devices also availab le in Tape and Reel. Specify by appending th e s uffix let t er “X” to the ordering cod e.

Connection Diagram

Note: Simplified Comp onent Representatio n

FAST is a regist ered trademark of Fair c hild Semiconductor C orporation.

Order Number Package Number Package Description

74F1071SC M20B 20-Lead Small Outline Integrated Circuit (SOIC), JEDEC MS-013, 0.300 Wide
74F1071MSA MSA20 20-Lead Shrink Small Outline Package (SSOP), EIAJ TYPE II, 5.3mm Wide
74F1071MTC MTC20 20-Lead Thin Shrink Small Outline Package (TSSOP), JEDEC MO-153, 4.4mm Wide

www.fairchildsemi.com 2

74F1071

Absolute Maximum Ratings(Note 1) Recommended Operating

Conditions

Note 1: Absolute maximum ratings are DC values beyond which the device

may be damaged or have its useful life impaired. Functional operation
under these conditi ons is not implied.

Note 2: Voltage ratings may be e xceeded if curren t ratings and juncti on
temperature and pow er consumption rati ngs are not exceeded.

Note 3: ESD Rating for Dire ct contact discharge usi ng ESD Simulation
Tester. Higher rating may be realized in the actual application.

DC Electrical Characteristics

Storage Temperature −65°C to +150°C
Ambient Temperature under Bias −65°C to +125°C
Junction Temperature under Bias −65°C to +150°C
Input Voltage (Note 2) −0.5V to +6V
Input Current (Note 2) −200 mA to +50 mA
ESD (Note 3)

Human Body Model
(MIL-STD-883D method 3015.7) ±10 kV
IEC 801-2 ±6 kV
Machine Model (EIAJIC-121-1981) ±2 kV

DC Latchup Source Current

(JEDEC Method 17) ±500 mA

Package Power Dissipation @+70°C

SOIC Package 800 mW

Free Air Ambient Temperature 0°C to +70°C
Reverse Bias Voltage 0V to 5.25 V

DC

Thermal Resistance (θJA in Free Air)

SOIC Package 100°C/W
SSOP Package 110°C/W

Symbol Parameter

TA = +25°CT

A

= 0°C to +70°C

Units Conditions

Min Typ Max Min Max

I

IH

Input HIGH Current 1.5 10 50

µA

VIN = 5.25V; Untested Input @ GND

320 100 VIN = 5.5V; Untested Input @ GND

V

Z

Reverse Voltage 6.6 6.9 7.2 5.9 7.7

V

IZ = 1 mA; Untested Inputs @ GND

7.1 7.5 8.0 IZ = 50 mA; Untested Inputs @ GND

V

F

Forward Voltage −0.3 −0.6 −0.9 −0.3 −0.9

V

IF = −18 mA; Untested Inputs @ 5V

−0.5 −1.1 −1.5 −0.5 −1.5 IF = −200 mA; Untested Inputs @ 5V

I

CT

Adjacent Input Crosstalk 3 %

C

IN

Input Capacitance 25

pF

V

BIAS

= 0 V

DC

(small signal @ 1 MHz) 13 V

BIAS

= 5 V

DC