Features
• Low profile package.
• Glass passivated junction.
S3A - S3M
SMC/DO-214AB
COLOR BAND DENOTES CATHODE
Discrete POWER & Signal
Technologies
0.280 (7.112)
0.124 (3.150)
0.108 (2.743)
0.260 (6.604)
2
0.320 (8.128)
0.305 (7.747)
1
0.245 (6.223)
0.220 (5.588)
0.103 (2.616)
0.079 (2.007)
S3A-S3M
0.060 (1.524)
0.030 (0.762)
0.008 (0.203)
0.004 (0.102)
0.012 (0.305)
0.006 (0.152)
3.0 Ampere General Purpose Rectifiers
Absolute Maximum Ratings* T
Symbol Parameter Value Units
I
O
i
f(surge)
P
D
R
θ
JA
T
stg
T
J
Average Rectified Current
= 100°C
@ T
A
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient ** 47
Storage Temperature Range -55 to +150
Operating Junction Temperature -55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics T
Parameter Device Units
3A 3B 3D 3G 3J 3K 3M
Peak Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V
Maximum RMS Voltage 35 70 140 280 420 560 700 V
DC Reverse Voltage (Rated VR)
Maximum Reverse Current
@ rated V
R
TA = 25°C
= 125°C
T
A
Maximum Forward Voltage @ 3.0 A 1.2 V
Maximum Reverse Recovery Time
I
= 0.5 A, IR = 1.0 A, I
F
= 0.25 A
rr
Typical Junction Capacitanc e
V
= 4.0 V, f = 1.0 MHz
R
50 100 200 400 600 800 1000 V
= 25°C unless otherwise noted
A
= 25°C unless otherwise noted
A
3.0 A
100 A
2.7
21
W
mW/°C
°
C/W
°
C
°
C
5.0
250
2.5
60 pF
µA
µA
µS
1998 Fairchild Semiconductor Corporation
S3A-S3M, Rev. A
T ypical Characteristics
S3A-S3M
General Purpose Rectifiers
(continued)
Forward Current De ratin g Curve
4
3.5
3
2.5
SINGLE PHASE
HALF WAV E
2
60HZ
RESISTIVE OR
1.5
INDUCTIVE LOAD
P.C.B. MO UNTED
1
ON 0. 3x 0.3 "
FORWAR D CURRE NT (A )
(8.0x8.0 mm)
0.5
COPPER PAD AREAS
0
50 60 70 80 90 100 110 120 130 140 150
LEAD TEMPERATURE ( C)
º
Non-Repetitive Surge Current
120
100
80
60
40
8.3mm Single Half Sine-Wave
20
JEDEC Method
FORWARD SURGE CURRENT (A)
0
12 51020 50100
NUMBER OF CYCLES AT 60Hz
Forward Charact eristics
100
10
1
0.1
FORWARD CURRE NT (A)
0.01
0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
T = 25 C
º
J
Pulse Width = 300µs
2% Duty Cycle
FORWARD VOLTAGE (V)
Reverse Characteris tics
100
º
T = 125 C
µ
10
1
REVERSE CURRENT ( A)
0.1
0 20406080100120140
A
REVERSE VOLTAGE (V)
º
T = 25 C
A
Junction Capacitance
100
50
T = 25 C
º
CAPACITANCE (pF)
10
5
1 5 10 50 100
J
REVERSE VO LTA GE (V)
S3A-S3M, Rev. A
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
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