Fairchild MPSA63, MMBTA63, PZTA63 service manual
MPSA63 / MMBTA63 / PZTA63
PNP Darlington Transistor
Features
• This device is designed for applications requiring extremely high current gain at currents to 800 mA.
• Sourced from Process 61.
MPSA63 / MMBTA63 / PZTA63 — PNP Darlington Transistor
August 2010
MPSA63
TO-92 SOT-23 SOT-223
EBC
Absolute Maximum Ratings * T
= 25°C unless otherwise noted
a
MMBTA63 PZTA63
C
Mark:2U
E
B
C
E
C
B
Symbol Parameter Value Units
V
CES
V
CBO
V
EBO
I
C
T
J, Tstg
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Collector-Emitter Voltage -30 V
Collector-Base Voltage -30 V
Emitter-Base Voltage -10 V
Collector Current - Continuous -1.2 A
Operating and Storage Junction Temperature Range - 55 to +150 °C
Thermal Characteristics T
Symbol Parameter
P
D
R
θJC
R
θJA
* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”.
** Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
MPSA63 / MMBTA63 / PZTA63 Rev. A1 1
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °C/W
Thermal Resistance, Junction to Ambient 200 357 125 °C/W
= 25°C unless otherwise noted
a
MPSA63 *MMBTA63 **PZTA63
625
5.0
Max.
350
2.8
1,000
8.0
2
Units
mW
mW/°C
.
MPSA63 / MMBTA63 / PZTA63 — PNP Darlington Transistor
β
Electrical Characteristics T
Symbol
Parameter Test Condition Min. Max. Units
= 25°C unless otherwise noted
a
Off Characteristics
BV
(BR)CES
I
CBO
I
EBO
Collector-Emitter Breakdown Voltage IC = -100μA, IB = 0 -30 V
Collector-Cutoff Current VCB = -30V, IE = 0 -100 nA
Emitter-Cutoff Current VEB = -10V, IC = 0 -100 nA
On Characteristics *
h
V
CE(sat)
V
BE(on)
FE
DC Current Gain IC = -10mA, VCE = -5.0V
Collector-Emitter Saturation Voltage IC = -100mA, IB = -0.1mA -1.5 V
Base-Emitter On Voltage IC = -100mA, VCE = -5.0V -2.0 V
Small Signal Characteristics
f
T
Current Gain - Bandwidth Product IC = -10mA, VCE = -5.0V,
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
= -100mA, VCE = -5.0V
I
C
f = 100MHz
5,000
10,000
125 MHz
Typical Performance Characteristics
Typical Pulse d Cu rren t Gai n
vs Col lector Current
50
V = 5V
40
30
20
10
FE
h - TYPICAL PULSED CURRENT G AI N (K)
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
MPSA63 / MMBTA63 / PZTA63 Rev. A1 2
CE
125 °C
25 °C
- 40 °C
0
0.01 0.1 1
I - COLLECTOR CURRENT (A)
C
Figure 1. Typical Pulsed Current Gain
vs Collector Current
Co llector -Em itter Sa turati o n
Voltag e vs C o llector Cur re nt
1.6
ββ
= 1000
1.2
- 40 °C
0.8
0.4
0
0.001 0.01 0.1 1
CESAT
V - COLLECTOR EMITTER VOLTA GE (V)
I - COLLECTOR CURRENT (A)
C
Figure 2. Collector-Emitter Saturation Voltage
25 °C
125 °C
vs Collector Current
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