Fairchild MPS6514 service manual

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NPN General Purpose Amplifier
• This device is designed as a general purpose amplifier and switch.
• The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier.
MPS6514
MPS6514
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings*
Ta=25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
, T
T
J
stg
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
Collector-Emitter Voltage 25 V Collector-Base Voltage 40 V Emitter-Base Voltage 4.0 V Collector current - Continuous 200 mA Junction and Storage Temperature -55 ~ +150 °C
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CBO
Collector-Emitter Breakdown Voltage IC = 0.5mA, IB = 0 25 V Collector-Base Breakdown Voltage IC =10µA, IE = 0 40 V Emitter-Base Breakdown Voltage IC = 10µA, IC = 0 4.0 V Collector Cutoff Current VCE = 30V, IE = 0 50 nA Collector Cutoff Current VCB = 30V, IE = 0, T = 100°C1.0µA
On Characteristics *
h
FE
V
CE(sat)
DC Current Gain IC = 2.0mA, VCE = 10V
= 100mA, VCE = 10V
I
C
150
90
Collector-Emitter Saturation Voltage IC = 50mA, IB = 5.0mA 0.5 V
300
Small Signal Characteristics
C
obo
* Pulse Test: Pulse Width 300µs, Duty Cycle ≤ 2.0%
Output Capacitance VCB = 10V, IE = 0, f = 100kHz 3.5 pF
Thermal Characteristics
Ta=25°C unless otherwise noted
Symbol Parameter Max. Units
P
D
R
θJC
R
θJA
©2004 Fairchild Semiconductor Corporation Rev. A, May 2004
Total Device Dissipation Derate above 25°C
625
5.0
mW
mW/°C Thermal Resistance, Junction to Case 83.3 °C/W Thermal Resistance, Junction to Ambient 200 °C/W
Package Dimensions
MPS6514
TO-92
Dimensions in Millimeters
Rev. A, May 2004©2004 Fairchild Semiconductor Corporation
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