Fairchild MOCD223M service manual
MOCD223M — Dual Channel Phototransistor Small Outline Surface Mount Optocouplers
April 2009
MOCD223M
Dual Channel Phototransistor Small Outline Surface
Mount Optocouplers
Features
U.L. Recognized (File #E90700, Volume 2)
■
■
VDE Recognized (File #13616) (add option “V” for
VDE approval, i.e, MOCD223VM)
Convenient Plastic SOIC-8 Surface Mountable
■
Package Style
■
High Current Transfer Ratio of 500% Minimum at
I
= 1mA
F
■
Minimum BV
■
Standard SOIC-8 Footprint, with 0.050" Lead Spacing
Compatible with Dual Wave, Vapor Phase and IR
■
Reflow Soldering
High Input-Output Isolation Voltage of 2500 V
■
Guaranteed
of 30 Volts Guaranteed
CEO
AC(rms)
Description
The MOCD223M consist of two gallium arsenide infrared
emitting diodes optically coupled to two monolithic silicon
phototransistor darlington detectors, in a surface mountable, small outline plastic package. It is ideally suited for
high density applications that require low input current
and eliminates the need for through-the-board mounting.
Applications
■
Interfacing and coupling systems of different
potentials and impedances
General purpose switching circuits
■
■
Monitor and detection circuits
Schematic Package Outline
LED 1 ANODE
LED 1 CATHODE
LED 2 ANODE
LED 2 CATHODE
©2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOCD223M Rev. 1.0.1
1
2
3
4 5
8
COLLECTOR 1
EMITTER 1
7
6
COLLECTOR 2
EMITTER 2
MOCD223M — Dual Channel Phototransistor Small Outline Surface Mount Optocouplers
Absolute Maximum Ratings
(T
= 25°C Unless otherwise specified)
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Rating Value Unit
EMITTER
I
F
(pk) Forward Current – Peak (PW = 100µs,120pps) 1.0 A
I
F
V
R
P
D
DETECTOR
V
CEO
V
CBO
V
ECO
I
C
P
D
TOTAL DEVICE
V
ISO
P
D
T
A
T
stg
T
L
Forward Current – Continuous 60 mA
Reverse Voltage 6.0 V
LED Power Dissipation @ T
Derate above 25°C
= 25°C
A
90
0.8
mW
mW/°C
Collector-Emitter Voltage 30 V
Collector-Base Voltage 70 V
Emitter-Collector Voltage 7.0 V
Collector Current-Continuous 150 mA
Detector Power Dissipation @ T
Derate above 25°C
Input-Output Isolation Voltage
A
(1,2,3)
= 25°C
150
1.76
mW
mW/°C
2500 Vac(rms)
(f = 60Hz, t = 1 min. Duration)
Total Device Power Dissipation @ T
Derate above 25°C
= 25°C
A
250
2.94
mW
mW/°C
Ambient Operating Temperature Range -40 to +100 °C
Storage Temperature Range -40 to +150 °C
Lead Soldering Temperature
260 °C
(1/16" from case, 10 sec. duration)
©2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOCD223M Rev. 1.0.1 2
Ω
MOCD223M — Dual Channel Phototransistor Small Outline Surface Mount Optocouplers
Electrical Characteristics
Symbol
EMITTER
V
I
C
DETECTOR
I
CEO1
I
CEO2
BV
BV
C
COUPLED
CTR Collector-Output Current
V
CE (sat)
t
t
V
ISO
R
C
*Typical values at T
Parameter
Input Forward Voltage I
F
Reverse Leakage Current V
R
Capacitance 18 pF
IN
Collector-Emitter Dark Current V
Collector-Emitter Breakdown
CEO
Voltage
Emitter-Collector Breakdown
ECO
Voltage
Collector-Emitter Capacitance f = 1.0MHz, V
CE
Collector-Emitter Saturation
Voltage
Tu r n-On Time I
on
Tu r n-Off Time I
off
t
Rise Time I
r
t
Fall Time I
f
Isolation Surge Voltage
Isolation Resistance
ISO
Isolation Capacitance
ISO
= 25°C
A
(2)
(2)
(T
= 25°C unless otherwise specified)
A
Test Conditions Min. Typ.* Max. Unit
= 1.0mA 1.25 1.3 V
F
= 6.0V 0.001 100 µA
R
(4)
I
(1,2,3)
= 5.0V, T
CE
V
= 5.0V, T
CE
I
= 100µA 30 90 V
C
I
= 100µA 7.0 10 V
E
= 1.0mA, V
F
I
= 500µA, I
C
= 5.0mA, V
F
(Fig 6.)
= 5.0mA, V
F
(Fig 6.)
= 5.0mA, V
F
(Fig 6.)
= 5.0mA, V
F
(Fig 6.)
f = 60Hz, t = 1 min. 2500 Vac(rms)
V
= 500V 10
I-O
V
= 0V, f = 1 MHz 0.2 pF
I-O
= 25°C 1.0 50 nA
A
= 100°C 1.0 µA
A
= 0 5.5 pF
CE
= 5V 500 1000 %
CE
= 1.0mA 1.0 V
F
= 10V, R
CC
= 10V, R
CC
= 10V, R
CC
= 10V, R
CC
= 100 Ω
L
= 100 Ω
L
= 100 Ω
L
= 100 Ω
L
8µs
55 µs
6µs
45 µs
11
Notes:
1. Isolation Surge Voltage, V
, is an internal device dielectric breakdown rating.
ISO
2. For this test, Pins 1, 2, 3 and 4 are common and Pins 5, 6, 7 and 8 are common.
rating of 2500 V
3. V
ISO
4. Current Transfer Ratio (CTR) = I
©2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOCD223M Rev. 1.0.1 3
for t = 1 min. is equivalent to a rating of 3,000 V
AC(rms)
/
I
x 100%
C
F
AC(rms)
for t = 1 sec.
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