Fairchild MOCD217M service manual
MOCD217M — Dual Channel Phototransistor Small Outline Surface Mount Optocouplers (Low Input Current)
December 2009
MOCD217M
Dual Channel Phototransistor Small Outline
Surface Mount Optocouplers (Low Input Current)
Features
■
UL recognized (File #E90700, Volume 2)
VDE recognized (File #136616) (add option “V” for
■
VDE approval, i.e, MOCD217VM)
■
Low input current (specified @ 1mA)
Minimum BV
■
■
Convenient plastic SOIC-8 surface mountable
package style
Standard SOIC-8 footprint, with 0.050" lead spacing
■
■
Compatible with dual wave, vapor phase and
IR reflow soldering
High input-output isolation of 2500 V
■
guaranteed
of 30 Volts guaranteed
CEO
AC(rms)
Applications
■
Interfacing and coupling systems of different
potentials and impedances
■
General purpose switching circuits
■
Monitor and detection circuits
Schematic
Description
The MOCD217M device consists of two gallium arsenide
infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface
mountable, small outline plastic package. It is ideally
suited for high density applications and eliminates the
need for through-the-board mounting.
ANODE 1
CATHODE 1
ANODE 2
CATHODE 2
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOCD217M Rev. 1.0.4
1
2
3
4
8
COLLECTOR 1
EMITTER 1
7
6
COLLECTOR 2
5
EMITTER 2
MOCD217M — Dual Channel Phototransistor Small Outline Surface Mount Optocouplers (Low Input Current)
Absolute Maximum Ratings
(T
= 25°C Unless otherwise specified)
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Rating Value Unit
EMITTER
I
F
(pk)
I
F
V
R
P
D
DETECTOR
V
CEO
V
ECO
I
C
P
D
TOTAL DEVICE
V
ISO
P
D
T
A
T
stg
Notes:
1. Input-Output Isolation Voltage, V
2. For this test, Pins 1, 2, 3 and 4 are common and Pins 5, 6, 7 and 8 are common.
3. V
rating of 2500 V
ISO
Forward Current – Continuous
Forward Current – Peak (PW = 100µs, 120 pps)
Reverse Voltage
LED Power Dissipation @ T
= 25°C
A
Derate above 25°C
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Detector Power Dissipation @ T
= 25°C
A
Derate above 25°C
Input-Output Isolation Voltage (f = 60Hz, t = 1 min.)
Total Device Power Dissipation @ T
= 25°C
A
Derate above 25°C
Ambient Operating Temperature Range
Storage Temperature Range
, is an internal device dielectric breakdown rating.
ISO
for t = 1 min. is equivalent to a rating of 3,000 V
AC(rms)
60 mA
1.0 A
6.0 V
90
0.8
30 V
7.0 V
150 mA
150
1.76
2500 Vac(rms)
250
2.94
-40 to +100 °C
-40 to +150 °C
for t = 1 sec.
AC(rms)
mW
mW/°C
mW
mW/°C
mW
mW/°C
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOCD217M Rev. 1.0.4 2
Ω
MOCD217M — Dual Channel Phototransistor Small Outline Surface Mount Optocouplers (Low Input Current)
Electrical Characteristics
(T
= 25°C unless otherwise specified)
A
Symbol Parameter Test Conditions Min. Typ.* Max. Unit
EMITTER
V
I
Input Forward Voltage I
F
Reverse Leakage Current V
R
Capacitance
C
DETECTOR
I
I
BV
BV
CEO1
CEO2
C
Collector-Emitter Dark Current V
Collector-Emitter Breakdown
CEO
Voltage
Emitter-Collector Breakdown
ECO
Voltage
Collector-Emitter Capacitance f = 1.0MHz, V
CE
COUPLED
CTR
V
CE (sat)
t
t
V
R
C
Current Transfer Ratio
Collector-Emitter Saturation
Voltage
Tu r n-On Time I
on
Tu r n-Off Time I
off
Rise Time I
t
r
Fall Time I
t
f
Isolation Surge Voltage
ISO
Isolation Resistance
ISO
Isolation Capacitance
ISO
*Typical values at T
= 25°C
A
(4)
I
(1)(2)(3)
(2)
(2)
= 10mA
F
= 6.0V
R
= 10 V, T
CE
V
= 10 V, T
CE
I
= 100µA
C
I
= 100µA
E
= 1.0mA, V
F
I
= 2.0mA, I
C
= 2.0mA, V
C
= 25°C
A
= 100°C
A
= 0V
CE
= 5V
CE
= 10mA
F
= 10V, R
CC
(Fig. 6)
= 2.0mA, V
C
= 10V, R
CC
(Fig. 6)
= 2.0mA, V
C
= 10V, R
CC
(Fig. 6)
= 2.0mA, V
C
= 10V, R
CC
(Fig. 6)
f = 60Hz, t = 1 min.
V
= 500V
I-O
V
= 0V, f = 1MHz
I-O
= 100 Ω
L
= 100 Ω
L
= 100 Ω
L
= 100 Ω
L
1.05 1.3 V
0.1 100 µA
18 pF
1.0 50 nA
1.0 µA
30 90 V
7.0 7.8 V
7.0 pF
100 130 %
0.35 0.4 V
7.5 µs
5.7 µs
3.2 µs
4.7 µs
2500 Vac(rms)
11
10
0.2 pF
Notes:
1. Input-Output Isolation Voltage, V
, is an internal device dielectric breakdown rating.
ISO
2. For this test, Pins 1, 2, 3 and 4 are common and Pins 5, 6, 7 and 8 are common.
3. V
rating of 2500 V
ISO
4. Current Transfer Ratio (CTR) = I
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOCD217M Rev. 1.0.4 3
for t = 1 min. is equivalent to a rating of 3,000 V
AC(rms)
/I
x 100%.
C
F
AC(rms)
for t = 1 sec.
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