Fairchild MOCD213M service manual
MOCD213M — Dual Channel Phototransistor Small Outline Surface Mount Optocouplers
April 2009
MOCD213M
Dual Channel Phototransistor Small Outline
Surface Mount Optocouplers
Features
■
U.L. recognized (File #E90700, Volume 2)
VDE recognized (File #136616) (add option “V” for
■
VDE approval, i.e, MOCD213VM)
■
Dual channel coupler
Convenient plastic SOIC-8 surface mountable
■
package style
■
Minimum current transfer ratio 100% with input current
of 10mA
■
Minimum BV
■
Standard SOIC-8 footprint, with 0.050" lead spacing
Compatible with dual wave, vapor phase and
■
IR reflow soldering
High input-output isolation of 2500 V
■
guaranteed
Applications
Feedback control circuits
■
Interfacing and coupling systems of different
■
potentials and impedances
General purpose switching circuits
■
Monitor and detection circuits
■
of 70 Volts guaranteed
CEO
AC(rms)
Description
The MOCD213M device consists of two gallium arsenide
infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface
mountable, small outline plastic package. It is ideally
suited for high density applications and eliminates the
need for through-the-board mounting.
Schematic
ANODE 1
CATHODE 1
ANODE 2
CATHODE 2
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOCD213M Rev. 1.0.1
1
2
3
4
8
COLLECTOR 1
EMITTER 1
7
6
COLLECTOR 2
5
EMITTER 2
MOCD213M — Dual Channel Phototransistor Small Outline Surface Mount Optocouplers
Absolute Maximum Ratings
(T
= 25°C Unless otherwise specified)
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Rating Value Unit
EMITTER
I
F
(pk)
I
F
V
R
P
D
DETECTOR
V
CEO
V
ECO
I
C
P
D
TOTAL DEVICE
V
ISO
P
D
T
A
T
stg
Forward Current – Continuous
Forward Current – Peak (PW = 100µs, 120 pps)
Reverse Voltage
LED Power Dissipation @ T
= 25°C
A
Derate above 25°C
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Detector Power Dissipation @ T
= 25°C
A
Derate above 25°C
Input-Output Isolation Voltage (f = 60Hz, t = 1 min.)
Total Device Power Dissipation @ T
= 25°C
A
Derate above 25°C
Ambient Operating Temperature Range
Storage Temperature Range
60 mA
1.0 A
6.0 V
90
0.8
mW
mW/°C
70 V
7.0 V
150 mA
150
1.76
mW
mW/°C
2500 Vac(rms)
250
2.94
mW
mW/°C
-40 to +100 °C
-40 to +150 °C
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOCD213M Rev. 1.0.1 2
Ω
MOCD213M — Dual Channel Phototransistor Small Outline Surface Mount Optocouplers
Electrical Characteristics
(T
= 25°C unless otherwise specified)
A
Symbol Parameter Test Conditions Min. Typ.* Max. Unit
EMITTER
Input Forward Voltage I
V
F
Reverse Leakage Current V
I
R
Capacitance
C
DETECTOR
I
CEO1
I
CEO2
BV
BV
C
Collector-Emitter Dark Current V
Collector-Emitter Breakdown
CEO
Voltage
Emitter-Collector Breakdown
ECO
Voltage
Collector-Emitter Capacitance f = 1.0MHz, V
CE
COUPLED
t
on
t
off
ISO
ISO
ISO
Current Transfer Ratio
Collector-Emitter Saturation
Voltage
Tu r n-On Time I
Tu r n-Off Time I
Rise Time I
t
r
Fall Time I
t
f
Isolation Surge Voltage
Isolation Resistance
Isolation Capacitance
CTR
V
CE (sat)
V
R
C
*Typical values at T
= 25°C
A
(4)
I
(1)(2)(3)
(2)
(2)
= 30mA
F
= 6.0V
R
= 10 V, T
CE
V
= 10 V, T
CE
I
= 100µA
C
I
= 100µA
E
= 10mA, V
F
I
= 2.0mA, I
C
= 2.0mA, V
C
= 25°C
A
= 100°C
A
= 0V
CE
= 10V
CE
= 10mA
F
= 10V, R
CC
(Fig. 6)
= 2.0mA, V
C
= 10V, R
CC
(Fig. 6)
= 2.0mA, V
C
= 10V, R
CC
(Fig. 6)
= 2.0mA, V
C
= 10V, R
CC
(Fig. 6)
f = 60Hz, t = 1 min.
V
= 500V
I-O
V
= 0V, f = 1MHz
I-O
= 100 Ω
L
= 100 Ω
L
= 100 Ω
L
= 100 Ω
L
1.25 1.55 V
0.001 100 µA
18 pF
1.0 50 nA
1.0 µA
70 120 V
7.0 7.8 V
7.0 pF
100 %
0.15 0.4 V
3.0 µs
2.8 µs
1.6 µs
2.2 µs
2500 Vac(rms)
11
10
0.2 pF
Notes:
1. Input-Output Isolation Voltage, V
, is an internal device dielectric breakdown rating.
ISO
2. For this test, Pins 1, 2, 3 and 4 are common and Pins 5, 6, 7 and 8 are common.
3. V
rating of 2500 V
ISO
4. Current Transfer Ratio (CTR) = I
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOCD213M Rev. 1.0.1 3
for t = 1 min. is equivalent to a rating of 3,000 V
AC(rms)
/I
x 100%.
C
F
AC(rms)
for t = 1 sec.
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