Fairchild MOCD211M service manual

MOCD211M — Dual Channel Phototransistor Small Outline Surface Mount Optocouplers

April 2009

MOCD211M
Dual Channel Phototransistor Small Outline
Surface Mount Optocouplers

Features

■

UL recognized (File #E90700, Volume 2)
VDE recognized (File #136616) (add option “V” for

■

VDE approval, i.e, MOCD211VM)

■

Minimum BV
Standard SOIC-8 footprint, with 0.050" lead spacing

■

■

Compatible with dual wave, vapor phase and
IR reflow soldering

High input-output isolation of 2500 V

■

guaranteed

■

Compact dual channel optocoupler

of 30 Volts guaranteed

CEO

AC(rms)

Applications

Interfacing and coupling systems of different

■

potentials and impedances

■

General purpose switching circuits
Monitor and detection circuits

■

Schematic

Description

The MOCD211M device consists of two gallium arsenide
infrared emitting diodes optically coupled to two mono­lithic silicon phototransistor detectors, in a surface
mountable, small outline plastic package. It is ideally
suited for high density applications and eliminates the
need for through-the-board mounting.

ANODE 1

CATHODE 1

ANODE 2

CATHODE 2

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOCD211M Rev. 1.0.1

1

2

3

4

8

COLLECTOR 1

EMITTER 1

7

6

COLLECTOR 2

5

EMITTER 2

MOCD211M — Dual Channel Phototransistor Small Outline Surface Mount Optocouplers

Absolute Maximum Ratings

(T

= 25°C Unless otherwise specified)

A

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.

Symbol Rating Value Unit

EMITTER

I

F

(pk)

I

F

V

R

P

D

DETECTOR

V

CEO

V

ECO

I

C

P

D

TOTAL DEVICE

V

ISO

P

D

T

A

T

stg

Forward Current – Continuous

Forward Current – Peak (PW = 100µs, 120 pps)

Reverse Voltage

LED Power Dissipation @ T

= 25°C

A

Derate above 25°C

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Detector Power Dissipation @ T

= 25°C

A

Derate above 25°C

Input-Output Isolation Voltage (f = 60Hz, t = 1 min.)

Total Device Power Dissipation @ T

= 25°C

A

Derate above 25°C

Ambient Operating Temperature Range

Storage Temperature Range

60 mA

1.0 A

6.0 V

90

0.8

mW

mW/°C

30 V

7.0 V

150 mA

150

1.76

mW

mW/°C

2500 Vac(rms)

250

2.94

mW

mW/°C

-40 to +100 °C

-40 to +150 °C

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOCD211M Rev. 1.0.1 2

Ω

MOCD211M — Dual Channel Phototransistor Small Outline Surface Mount Optocouplers

Electrical Characteristics

(T

= 25°C unless otherwise specified)

A

Symbol Parameter Test Conditions Min. Typ.* Max. Unit

EMITTER

V

I

Input Forward Voltage I

F

Reverse Leakage Current V

R

Capacitance

C

DETECTOR

I

CEO1

I

CEO2

BV

BV

C

Collector-Emitter Dark Current V

Collector-Emitter Breakdown

CEO

Voltage

Emitter-Collector Breakdown

ECO

Voltage

Collector-Emitter Capacitance f = 1.0MHz, V

CE

COUPLED

CTR

V

CE (sat)

t

t

V

R

C

Current Transfer Ratio

Collector-Emitter Saturation
Voltage

Tu r n-On Time I

on

Tu r n-Off Time I

off

Rise Time I

t

r

Fall Time I

t

f

Isolation Surge Voltage

ISO

Isolation Resistance

ISO

Isolation Capacitance

ISO

*Typical values at T

= 25°C

A

(4)

I

(1)(2)(3)

(2)

(2)

= 10mA

F

= 6.0V

R

= 10 V, T

CE

V

= 10 V, T

CE

I

= 100µA

C

I

= 100µA

E

= 10mA, V

F

I

= 2.0mA, I

C

= 2.0mA, V

C

= 25°C

A

= 100°C

A

= 0V

CE

= 10V

CE

= 10mA

F

= 10V, R

CC

(Fig. 6)

= 2.0mA, V

C

= 10V, R

CC

(Fig. 6)

= 2.0mA, V

C

= 10V, R

CC

(Fig. 6)

= 2.0mA, V

C

= 10V, R

CC

(Fig. 6)

f = 60Hz, t = 1 min.

V

= 500V

I-O

V

= 0V, f = 1MHz

I-O

= 100 Ω

L

= 100 Ω

L

= 100 Ω

L

= 100 Ω

L

1.15 1.5 V

0.001 100 µA

18 pF

1.0 50 nA

1.0 µA

30 100 V

7.0 10 V

7.0 pF

20 %

0.4 V

7.5 µs

5.7 µs

3.2 µs

4.7 µs

2500 Vac(rms)

11

10

0.2 pF

Notes:

1. Input-Output Isolation Voltage, V

, is an internal device dielectric breakdown rating.

ISO

2. For this test, Pins 1, 2, 3 and 4 are common and Pins 5, 6, 7 and 8 are common.

3. V

rating of 2500 V

ISO

4. Current Transfer Ratio (CTR) = I

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOCD211M Rev. 1.0.1 3

for t = 1 min. is equivalent to a rating of 3,000 V

AC(rms)

/I

x 100%.

C

F

AC(rms)

for t = 1 sec.