Fairchild MOC8021M, MOC8050M service manual
MOC8021M, MOC8050M — Photodarlington Optocoupler (No Base Connection)
September 2009
MOC8021M, MOC8050M
Photodarlington Optocoupler (No Base Connection)
Features
■
High BV
– Minimum 50V (MOC8021M)
– Minimum 80V (MOC8050M)
■
High current transfer ratio:
– Minimum 1,000% (MOC8021M)
– Minimum 500% (MOC8050M)
■
500%
No base connection for improved noise immunity
■
■
Underwriters Laboratory (UL) recognized
File #E90700, Volume 2
IEC 60747-5-2 approved (ordering option V)
■
CEO
Applications
Appliances, measuring instruments
■
■
I/O interface for computers
Programmable controllers
■
■
Portable electronics
Interfacing and coupling systems of different
■
potentials and impedance
■
Solid state relays
Description
The MOC8021M and MOC8050M are photodarlingtontype optically coupled optocouplers. The devices have a
gallium arsenide infrared emitting diode coupled with a
silicon darlington phototransistor.
Schematic Package Outlines
ANODE
CATHODE
©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC8021M, MOC8050M Rev. 1.0.6
N/C
1
2
3
N/C
6
COLLECT
5
4
EMITTER
OR
MOC8021M, MOC8050M — Photodarlington Optocoupler (No Base Connection)
Absolute Maximum Ratings
(T
= 25°C Unless otherwise specified.)
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameter Value Units
TOTAL DEVICE
T
STG
T
OPR
T
SOL
P
D
EMITTER
I
F
V
R
P
D
DETECTOR
V
CEO
P
D
I
C
Storage Temperature -40 to +150 °C
Operating Temperature -40 to +100 °C
Lead Solder Temperature (Wave solder) 260 for 10 sec °C
Total Device Power Dissipation @ T
= 25°C 250 mW
A
Derate above 25°C 2.94 mW/°C
DC/Average Forward Input Current 60 mA
Reverse Input Voltage 3 V
LED Power Dissipation @ T
= 25°C 120 mW
A
Derate above 25°C 1.41 mW/°C
Collector-Emitter Voltage
MOC8021M
MOC8050M
Detector Power Dissipation @ T
= 25°C 150 mW
A
50
80
V
Derate above 25°C 1.76 mW/°C
Continuous Collector Current 150 mA
©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC8021M, MOC8050M Rev. 1.0.6 2
Ω
MOC8021M, MOC8050M — Photodarlington Optocoupler (No Base Connection)
Electrical Characteristics
(T
= 25°C Unless otherwise specified.)
A
Individual Component Characteristics
Symbol Parameter Test Conditions Min. Typ.* Max. Unit
EMITTER
V
I
Input Forward Voltage
F
Reverse Leakage Current
R
I
= 10mA 1.18 2.00 V
F
V
= 3.0V 0.001 10 µA
R
DETECTOR
BV
BV
I
CEO
C
Collector-Emitter Breakdown Voltage
CEO
MOC8021M
MOC8050M
Emitter-Collector Breakdown Voltage I
ECO
Collector-Emitter Dark Current
Capacitance
CE
I
= 1.0mA, I
C
= 100µA, I
E
V
= 60V, I
CE
V
= 0V, f = 1MHz 8 pF
CE
= 0
F
50
80
= 0 5 10 V
F
= 0 1 µA
F
100
100
Transfer Characteristics
Symbol Parameter Test Conditions Min. Typ.* Max. Unit
DC CHARACTERISTICS
CTR
AC CHARACTERISTICS
t
on
t
off
Current Transfer Ratio,
Collector to Emitter
MOC8021M
MOC8050M
Non-Saturated Turn-on Time I
Tu r n-off Time I
I
= 10mA, V
F
I
= 10mA, V
F
= 5mA, V
F
R
= 100 Ω
L
= 5mA, V
F
R
= 100 Ω
L
CE
CE
= 10V,
CC
= 10V,
CC
= 5V
= 1.5V
1,000
500
8.5 µs
95 µs
V
%
Isolation Characteristics
Symbol Characteristic Test Conditions Min. Typ. Max. Units
V
ISO
R
ISO
C
ISO
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
Note:
*Typical values at T
©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC8021M, MOC8050M Rev. 1.0.6 3
= 25°C
A
f = 60Hz, t = 1 sec. 7500 Vac(pk)
V
= 500VDC 10
I-O
V
= Ø, f = 1MHz 0.2 2 pF
I-O
11
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