The MOC306XM and MOC316XM devices consist of a
GaAs infrared emitting diode optically coupled to a
monolithic silicon detector performing the function of a
zero voltage crossing bilateral triac driver. They are
designed for use with a triac in the interface of logic systems to equipment powered from 115/240 VAC lines,
such as solid-state relays, industrial controls, motors,
solenoids and consumer appliances, etc.
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
SymbolParametersDeviceValueUnits
TOTAL DEVICE
T
STG
T
OPR
T
SOL
T
V
ISO
P
D
EMITTER
I
F
V
R
P
D
DETECTOR
V
DRM
I
TSM
P
D
Storage TemperatureAll-40 to +150°C
Operating TemperatureAll-40 to +85°C
Lead Solder TemperatureAll260 for 10 sec°C
Junction Temperature RangeAll-40 to +100°C
J
Isolation Surge Voltage
(1)
All7500Vac(pk)
(peak AC voltage, 60Hz, 1 sec. duration)
Total Device Power Dissipation @ 25°C Ambient
Derate above 25°C
All250mW
2.94mW/°C
Continuous Forward CurrentAll60mA
Reverse VoltageAll6V
Total Power Dissipation @ 25°C Ambient
Derate above 25°C
All120mW
1.41mW/°C
Off-State Output Terminal VoltageAll600V
Peak Repetitive Surge Current
All1A
(PW = 100µs, 120pps)
Total Power Dissipation @ 25°C Ambient
Derate above 25°C
All150mW
1.76mW/°C
Note:
1. Isolation surge voltage, V
, is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.