Fairchild MOC3062M service manual

MOC306XM, MOC316XM — 6-Pin DIP Zero-Cross Phototriac Driver Optocoupler (600 Volt Peak)
September 2010
Features
Simplifies logic control of 115/240 VAC power
Zero voltage crossing dv/dt of 1000V/µs guaranteed (MOC316X-M),
– 600V/µs guaranteed (MOC306X-M) VDE recognized (File # 94766)
– ordering option V (e.g., MOC3063V-M)
Underwriters Laboratories (UL) recognized (File #E90700, volume 2)
Description
The MOC306XM and MOC316XM devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver. They are designed for use with a triac in the interface of logic sys­tems to equipment powered from 115/240 VAC lines, such as solid-state relays, industrial controls, motors, solenoids and consumer appliances, etc.
Applications
Solenoid/valve controls
Static power switches Temperature controls
AC motor starters Lighting controls
AC motor drives E.M. contactors
Solid state relays
Schematic Package Outlines
N/C
1
2
3
ZERO
CROSSING
CIRCUIT
*DO NOT CONNECT (TRIAC SUBSTRATE)
ANODE
CATHODE
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC306XM, MOC316XM Rev. 1.0.4
MAIN TERM.
6
NC*
5
4
MAIN TERM.
MOC306XM, MOC316XM — 6-Pin DIP Zero-Cross Phototriac Driver Optocoupler (600 Volt Peak)
Absolute Maximum Ratings
(T
= 25°C unless otherwise noted)
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
Symbol Parameters Device Value Units
TOTAL DEVICE
T
STG
T
OPR
T
SOL
T
V
ISO
P
D
EMITTER
I
F
V
R
P
D
DETECTOR
V
DRM
I
TSM
P
D
Storage Temperature All -40 to +150 °C
Operating Temperature All -40 to +85 °C
Lead Solder Temperature All 260 for 10 sec °C
Junction Temperature Range All -40 to +100 °C
J
Isolation Surge Voltage
(1)
All 7500 Vac(pk)
(peak AC voltage, 60Hz, 1 sec. duration)
Total Device Power Dissipation @ 25°C Ambient Derate above 25°C
All 250 mW
2.94 mW/°C
Continuous Forward Current All 60 mA
Reverse Voltage All 6 V
Total Power Dissipation @ 25°C Ambient Derate above 25°C
All 120 mW
1.41 mW/°C
Off-State Output Terminal Voltage All 600 V
Peak Repetitive Surge Current
All 1 A
(PW = 100µs, 120pps)
Total Power Dissipation @ 25°C Ambient Derate above 25°C
All 150 mW
1.76 mW/°C
Note:
1. Isolation surge voltage, V
, is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are
ISO
common, and Pins 4, 5 and 6 are common.
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC306XM, MOC316XM Rev. 1.0.4 2
MOC306XM, MOC316XM — 6-Pin DIP Zero-Cross Phototriac Driver Optocoupler (600 Volt Peak)
Electrical Characteristics
(T
= 25°C Unless otherwise specified)
A
Individual Component Characteristics
Symbol Parameters Test Conditions Device Min. Typ.* Max. Units
EMITTER
V
I
Input Forward Voltage I
F
Reverse Leakage Current V
R
= 30mA All 1.3 1.5 V
F
= 6V All 0.005 100 µA
R
DETECTOR
I
DRM1
Peak Blocking Current, Either Direction
dv/dt Critical Rate of Rise of
Off-State Voltage
V
= 600V, I
DRM
I
= 0 (Figure 9)
F
F
= 0
(3)
(2)
MOC316XM 10 100
MOC306XM 10 500
MOC306XM 600 1500
MOC316XM 1000
V/µs
Transfer Characteristics
Symbol DC Characteristics Test Conditions Device Min. Typ.* Max. Units
I
FT
V
TM
I
H
LED Trigger Current (rated I
FT
)
Peak On-State Voltage, Either Direction
Holding Current, Either Direction
Main Terminal Voltage = 3V
I
= 100 mA peak,
TM
I
= rated I
F
FT
(3)
MOC3061M 15 mA
MOC3062M/
10
MOC3162M
MOC3063M/
5
MOC3163M
All 1.8 3 V
All 500 µA
nA
Zero Crossing Characteristics
Symbol Characteristics Test Conditions Device Min. Typ.* Max. Units
V
INH
I
DRM2
Inhibit Voltage (MT1-MT2 voltage above which device will not trigger)
Leakage in Inhibited State I
I
= Rated I
F
= Rated I
F
V
= 600V,
DRM
off state
FT
FT
MOC3061M/2M/3M 12 20 V
MOC3162M/3M 12 15
,
Al 2 mA
Isolation Characteristics
Symbol Characteristics Test Conditions Device Min. Typ.* Max. Units
V
ISO
*Typical values at T
Notes:
2. Test voltage must be applied within dv/dt rating.
3. All devices are guaranteed to trigger at an I I
lies between max I
F
MOC3163M) and absolute max I
4. This is static dv/dt. See Figure 9 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only.
Isolation Voltage f = 60 Hz, t = 1 sec All 7500 V
= 25°C
A
value less than or equal to max I
(15mA for MOC3061M, 10mA for MOC3062M & MOC3162M, 5mA for MOC3063M &
FT
(60mA).
F
F
. Therefore, recommended operating
FT
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC306XM, MOC316XM Rev. 1.0.4 3
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol Parameter Min. Typ. Max. Unit
MOC306XM, MOC316XM — 6-Pin DIP Zero-Cross Phototriac Driver Optocoupler (600 Volt Peak)
Installation Classifications per DIN VDE 0110/1.89
Ta ble 1
For Rated Main Voltage < 150Vrms I-IV
For Rated Main voltage < 300Vrms I-IV
Climatic Classification 55/100/21
Pollution Degree (DIN VDE 0110/1.89) 2
CTI Comparative Tracking Index 175
V
PR
Input to Output Test Voltage, Method b, V
x 1.875 = V
IORM
, 100% Production Test
PR
1594 V
peak
with tm = 1 sec, Partial Discharge < 5pC
Input to Output Test Voltage, Method a, V
IORM
x 1.5 = V
, Type and Sample Test
PR
1275 V
peak
with tm = 60 sec, Partial Discharge < 5pC
V
V
IORM
IOTM
Max. Working Insulation Voltage 850 V
Highest Allowable Over Voltage 6000 V
peak
peak
External Creepage 7 mm
External Clearance 7 mm
Insulation Thickness 0.5 mm
RIO Insulation Resistance at Ts, V
= 500V 10
IO
9
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC306XM, MOC316XM Rev. 1.0.4 4
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