Fairchild MOC256M service manual
MOC256M — AC Input Phototransistor Small Outline Surface Mount Optocouplers
April 2009
MOC256M
AC Input Phototransistor Small Outline
Surface Mount Optocouplers
Features
■
UL recognized file (#E90700, Volume 2)
VDE recognized (File #136616)
■
– Ordering option V (i.e. MOC256VM)
■
Industry standard SOIC-8 surface mountable
package, with 0.050" lead spacing
■
Available in tape and reel option
Bidirectional AC input (protection against reversed DC
■
bias)
■
Guaranteed CTR symmetry of 2:1 maximum
High input-output isolation of 2500 Vac (rms)
■
guaranteed
Schematic
1
N/CAC IN
8
Description
The MOC256M is an AC input phototransistor optocoupler. The device consists of two infrared emitters
connected in anti-parallel and coupled to a silicon NPN
phototransistor detector. It is designed for applications
requiring the detection or monitoring of AC signals. The
device is constructed with a standard SOIC-8 footprint.
AC IN
2
3
N/C
4
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC256M Rev. 1.0.1
BASE
7
COLLECTORN/C
6
EMITTER
5
MOC256M — AC Input Phototransistor Small Outline Surface Mount Optocouplers
Absolute Maximum Ratings
(T
= 25°C Unless otherwise specified)
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Rating Value Unit
EMITTER
I
F
(pk)
I
F
P
D
DETECTOR
V
CEO
V
ECO
I
C
P
D
TOTAL DEVICE
V
ISO
P
D
T
A
T
stg
Forward Current – Continuous
Forward Current – Peak (PW = 100µs, 120 pps)
LED Power Dissipation @ T
= 25°C
A
Derate above 25°C
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Detector Power Dissipation @ T
= 25°C
A
Derate above 25°C
Input-Output Isolation Voltage (f = 60Hz, t = 1 min.)
Total Device Power Dissipation @ T
= 25°C
A
Derate above 25°C
Ambient Operating Temperature Range
Storage Temperature Range
60 mA
1.0 A
90
0.8
mW
mW/°C
30 V
7.0 V
150 mA
150
1.76
mW
mW/°C
2500 Vac(rms)
250
2.94
mW
mW/°C
-40 to +100 °C
-40 to +150 °C
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC256M Rev. 1.0.1 2
Ω
MOC256M — AC Input Phototransistor Small Outline Surface Mount Optocouplers
Electrical Characteristics
(T
= 25°C unless otherwise specified)
A
Symbol Parameter Test Conditions Min. Typ.* Max. Unit
EMITTER
V
C
DETECTOR
I
CEO1
I
CEO2
I
CBO
BV
BV
BV
C
C
C
COUPLED
CTR Current Transfer Ratio
V
CE (sat)
V
R
C
* Typical values at T
Input Forward Voltage I
F
Input Capacitance V = 0 V, f = 1MHz 20 pF
J
Collector-Emitter Dark Current V
Collector-Base Dark Current V
Collector-Emitter Breakdown Voltage I
CEO
Collector-Base Breakdown Voltage I
CBO
Emitter-Collector Breakdown Voltage I
ECO
Collector-Emitter Capacitance f = 1.0MHz, V
CE
Collector-Base Capacitance f = 1.0MHz, V
CB
Emitter-Base Capacitance f = 1.0MHz, V
EB
(1)
I
Output-Collector Current Symmetry I
Collector-Emitter Saturation Voltage I
Isolation Surge Voltage
ISO
Isolation Resistance
ISO
Isolation Capacitance
ISO
= 25°C
A
(2)(3)
(3)
(3)
= ±10mA 1.2 1.5 V
F
= 10V, T
CE
V
= 10V, T
CE
= 10V 0.2 nA
CB
= 10mA 30 100 nA
C
= 100µA 70 120 V
C
= 100µA 5 10 V
E
= ±10mA, V
F
@ I
C
()
@ I
I
C
= 0.5mA, I
C
= 25°C 1.0 100 nA
A
= 100°C 1.0 µA
A
= 0 7 pF
CE
= 0 20 pF
CB
= 0 10 pF
EB
= 10V 20 150 %
CE
= +10mA, V
F
= –10mA, V
F
= ±10mA 0.1 0.4 V
F
CE
CE
= 10V
= 10V
0.5 2.0
f = 60Hz AC Peak, t = min. 2500 Vac(rms)
V = 500V 10
11
V = 0V, f = 1MHz — 0.2 pF
Notes:
1. Current Transfer Ratio (CTR) = I
2. Isolation Surge Voltage, V
ISO
/I
x 100%.
C
F
, is an internal device dielectric breakdown rating.
3. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC256M Rev. 1.0.1 3
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