Fairchild MOC223M service manual

MOC223M — Small Outline Optocouplers Darlington Output

April 2009

MOC223M
Small Outline Optocouplers Darlington Output

Features

■

U.L. Recognized (File #E90700, Volume 2)
VDE Recognized (File #136616) (add option “V” for

■

VDE approval, i.e, MOC223VM)

■

Industry Standard SOIC-8 Surface Mountable
Package with 0.050" lead spacing

High Current Transfer Ratio of 500% Minimum at

■

I

= 1mA

F

Standard SOIC-8 Footprint, with 0.050" Lead Spacing

■

■

Compatible with Dual Wave, Vapor Phase and IR
Reflow Soldering

High Input-Output Isolation Voltage of 2500 V

■

Guaranteed

AC(rms)

Applications

■

Low power logic circuits
Interfacing and coupling systems of different

■

potentials and impedances

■

Telecommunications equipment
Portable electronics

■

■

Solid state relays

Description

The MOC223M consists of a gallium arsenide infrared
emitting diode optically coupled to a monolithic silicon
photodarlington detector, in a surface mountable, small
outline, plastic package. It is ideally suited for high
density applications, and eliminates the need for through
the board mounting.

Schematic Package Outline

ANODE

CATHODE

©2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC223M Rev. 1.0.2

1

2

3

N/C

N/C

4 5

N/C

8

7

BASE

6

COLLECTOR

EMITTER

MOC223M — Small Outline Optocouplers Darlington Output

Absolute Maximum Ratings

(T

= 25°C Unless otherwise specified)

A

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.

Symbol Rating Value Unit

EMITTER

I

F

I

(pk) Forward Current – Peak (PW = 100µs, 120pps) 1.0 A

F

V

R

P

D

DETECTOR

V

CEO

V

ECO

V

CBO

I

C

P

D

TOTAL DEVICE

V

ISO

P

D

T

A

T

stg

Forward Current – Continuous 60 mA

Reverse Voltage 6.0 V

LED Power Dissipation @ T
Derate above 25°C

= 25°C

A

90

0.8

mW

mW/°C

Collector-Emitter Voltage 30 V

Emitter-Collector Voltage 7.0 V

Collector-Base Voltage 70 V

Collector Current-Continuous 150 mA

Detector Power Dissipation @ T
Derate above 25°C

= 25°C

A

150

1.76

mW

mW/°C

Input-Output Isolation Voltage (f = 60Hz, t = 1 min.) 2500 Vac(rms)

Total Device Power Dissipation @ T
Derate above 25°C

= 25°C

A

250

2.94

mW

mW/°C

Ambient Operating Temperature Range -40 to +100 °C

Storage Temperature Range -40 to +150 °C

©2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC223M Rev. 1.0.2 2

Ω

MOC223M — Small Outline Optocouplers Darlington Output

Electrical Characteristics

(T

= 25°C unless otherwise specified)

A

Symbol Parameter Test Conditions Min. Typ.* Max. Unit

EMITTER

V

I

C

DETECTOR

I

CEO1

I

CEO2

BV

BV

C

COUPLED

CTR Current Transfer Ratio

V

ISO

R

V

CE (sat)

C

t

t

Input Forward Voltage I

F

Reverse Leakage Current V

R

Input Capacitance 18 pF

IN

Collector-Emitter Dark Current V

Collector-Emitter Breakdown

CEO

= 1.0mA 1.08 1.3 V

F

= 6.0V 0.001 100 µA

R

= 5.0 V, T

CE

V

= 5.0 V, T

CE

I

= 100µA 30 100 V

C

= 25°C 1.0 50 nA

A

= 100°C 10 µA

A

Voltage

Emitter-Collector Breakdown

ECO

I

= 100µA 7.0 10 V

E

Voltage

Collector-Emitter Capacitance f = 1.0 MHz, V

CE

(3)

I

Isolation Surge Voltage

Isolation Resistance

ISO

(1,2)

(2)

Collector-Emitter Saturation

= 1.0mA, V

F

f = 60Hz AC Peak, t = 1 min. 2500 Vac(rms)

V = 500V 10

I

= 500µA, I

C

= 0 5.5 pF

CE

= 5.0V 500 1000 %

CE

11

= 1.0mA 1.0 V

F

Voltage

Isolation Capacitance

ISO

Tu r n-On Time I

on

(2)

V

= 0V, f = 1MHz 0.2 pF

I-O

= 5.0mA, V

F

= 10V, R

CC

= 100 Ω

L

10 µs

(Fig. 6)

Tu r n-Off Time I

off

= 5.0mA, V

F

= 10V, R

CC

= 100 Ω

L

125 ns

(Fig. 6)

t

Rise Time I

r

= 5.0mA, V

F

= 10V, R

CC

= 100 Ω

L

8µs

(Fig. 6)

t

Fall Time I

f

= 5.0mA, V

F

= 10V, R

CC

= 100 Ω

L

110 µs

(Fig. 6)

*All typicals at T

= 25°C

A

Notes:

1. Isolation Surge Voltage, V

, is an internal device dielectric breakdown rating.

ISO

2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.
/ I

3. Current Transfer Ratio (CTR) = I

©2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC223M Rev. 1.0.2 3

C

x 100%.

F