Fairchild MOC215M, MOC216M, MOC217M service manual
MOC215M, MOC216M, MOC217M — Small Outline Surface Mount Phototransistor Optocouplers
April 2009
MOC215M, MOC216M, MOC217M
Small Outline Surface Mount Phototransistor
Optocouplers
Features
■
U.L. recognized (File #E90700, Volume 2)
VDE recognized (File #136616)
■
(add option “V” for VDE approval, i.e, MOC205VM)
■
Convenient plastic SOIC-8 surface mountable
package style
■
Low LED input current required for easier logic
interfacing
Standard SOIC-8 footprint, with 0.050" lead spacing
■
■
Compatible with dual wave, vapor phase and
IR reflow soldering
High input-output isolation of 2500 V
■
guaranteed
AC(rms)
Applications
■
Low power logic circuits
Interfacing and coupling systems of different
■
potentials and impedances
■
Telecommunications equipment
Portable electronics
■
Description
These devices consist of a gallium arsenide infrared
emitting diode optically coupled to a monolithic silicon
phototransistor detector, in a surface mountable, small
outline, plastic package. They are ideally suited for high
density applications, and eliminate the need for throughthe-board mounting.
Marking Information
MOC215M = 215
■
■
MOC216M = 216
MOC217M = 217
■
Schematic
1
N/C
2
3
4
CATHODE
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC215M, MOC216M, MOC217M Rev. 1.0.1
N/CANODE
8
7
BASE
COLLECTORN/C
6
EMITTER
5
MOC215M, MOC216M, MOC217M — Small Outline Surface Mount Phototransistor Optocouplers
Absolute Maximum Ratings
(T
= 25°C Unless otherwise specified)
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Rating Value Unit
EMITTER
I
F
I
(pk) Forward Current – Peak (PW = 100µs, 120pps) 1.0 A
F
V
R
P
D
DETECTOR
V
CEO
V
CBO
V
ECO
I
C
P
D
TOTAL DEVICE
V
ISO
P
D
T
A
T
stg
Forward Current – Continuous 60 mA
Reverse Voltage 6.0 V
LED Power Dissipation @ T
Derate above 25°C
= 25°C
A
90
0.8
mW
mW/°C
Collector-Emitter Voltage 30 V
Collector-Base Voltage 70 V
Emitter-Collector Voltage 7.0 V
Collector Current-Continuous 150 mA
Detector Power Dissipation @ T
Derate above 25°C
Input-Output Isolation Voltage (f = 60Hz, t = 1 min.)
Total Device Power Dissipation @ T
Derate above 25°C
= 25°C
A
A
= 25°C
(1)(2)
150
1.76
mW
mW/°C
2500 Vac(rms)
250
2.94
mW
mW/°C
Ambient Operating Temperature Range -40 to +100 °C
Storage Temperature Range -40 to +125 °C
Notes:
1. Isolation Surge Voltage, V
, is an internal device dielectric breakdown rating.
ISO
2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC215M, MOC216M, MOC217M Rev. 1.0.1 2
Ω
MOC215M, MOC216M, MOC217M — Small Outline Surface Mount Phototransistor Optocouplers
Electrical Characteristics
(T
= 25°C unless otherwise specified)
A
Symbol Characteristic Test Conditions Min. Typ.* Max. Unit
EMITTER
V
Forward Voltage I
F
Reverse Leakage Current V
I
R
C Capacitance 18 pF
DETECTOR
BV
BV
I
CEO
C
Collector-Emitter Dark Current V
Collector-Emitter Breakdown Voltage I
CEO
Emitter-Collector Breakdown Voltage I
ECO
Collector-Emitter Capacitance f = 1.0MHz, V
CE
COUPLED
CTR Output Collector Current
(4)
MOC215M
MOC216M
MOC217M
V
CE(sat)
V
R
C
*Typical values at T
Collector-Emitter Saturation Voltage I
Tu r n-On Time I
t
on
Tu r n-Off Time I
t
off
Rise Time I
t
r
Fall Time I
t
f
Input-Output Isolation Voltage
ISO
Isolation Resistance
ISO
Isolation Capacitance
ISO
= 25°C
A
(2)
(2)
(1)(2)(3)
= 1.0mA 1.07 1.3 V
F
= 6.0V 0.001 100 µA
R
= 5.0V, T
CE
= 5.0V, T
V
CE
= 100µA 30 100 V
C
= 100µA 7.0 10 V
E
= 1.0mA, V
I
F
= 25°C 1.0 50 nA
A
= 100°C 1.0 µA
A
= 0 7.0 pF
CE
= 5.0V
CE
20
50
100
= 100µA, I
C
= 2.0mA, V
C
= 100 Ω , (Fig. 10)
R
L
= 2.0mA, V
C
= 100 Ω (Fig. 10)
R
L
= 2.0mA, V
C
= 100 Ω (Fig. 10)
R
L
= 2.0mA, V
C
= 100 Ω (Fig. 10)
R
L
= 1.0mA 0.4 V
F
= 10V,
CC
= 10V,
CC
= 10V,
CC
= 10V,
CC
4.0 µs
4.0 µs
3.0 µs
3.0 µs
f = 60 Hz, t = 1.0 min. 2500 Vac(rms)
V
= 500V 10
I-O
V
= 0, f = 1.0MHz 0.2 pF
I-O
11
%
Notes:
1. Isolation Surge Voltage, V
, is an internal device dielectric breakdown rating.
ISO
2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.
3. V
rating of 2500 V
ISO
4. Current Transfer Ratio (CTR) = I
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC215M, MOC216M, MOC217M Rev. 1.0.1 3
for t = 1 min. is equivalent to a rating of 3,000 V
AC(rms)
/I
x 100%.
C
F
AC(rms)
for t = 1 sec.
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