Fairchild MOC211-M, MOC212-M, MOC213-M service manual
MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output
April 2009
MOC211M, MOC212M, MOC213M
Small Ouline Optocouplers Transistor Output
Features
UL recognized (File #E90700, Volume 2)
■
■
VDE recognized (File #136616) (add option ‘V’ for
VDE approval, e.g., MOC211VM)
Convenient plastic SOIC-8 surface mountable
■
package style
■
Standard SOIC-8 footprint, with 0.050" lead spacing
Compatible with dual wave, vapor phase and
■
IR reflow soldering
High input-output isolation of 2500 V
■
AC(rms)
guaranteed
■
Minimum BV
of 30V guaranteed
CEO
Applications
■
General purpose switching circuits
Interfacing and coupling systems of different
■
potentials and impedances
Regulation feedback circuits
■
■
Monitor and detection circuits
Schematic
Description
These devices consist of a gallium arsenide infrared
emitting diode optically coupled to a monolithic silicon
phototransistor detector, in a surface mountable, small
outline, plastic package. They are ideally suited for high
density applications, and eliminate the need for throughthe-board mounting.
1
N/C
2
3
4
CATHODE
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC211M, MOC212M, MOC213M Rev. 1.0.1
N/CANODE
8
7
BASE
COLLECTORN/C
6
EMITTER
5
MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output
Absolute Maximum Ratings
(T
= 25°C Unless otherwise specified)
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Rating Value Unit
EMITTER
I
F
I
(pk) Forward Current – Peak (PW = 100µs, 120pps) 1.0 A
F
V
R
P
D
DETECTOR
V
CEO
V
ECO
V
CBO
I
C
P
D
TOTAL DEVICE
V
ISO
P
D
T
A
T
stg
T
L
Forward Current – Continuous 60 mA
Reverse Voltage 6.0 V
LED Power Dissipation @ T
Derate above 25°C
= 25°C
A
90
0.8
mW
mW/°C
Collector-Emitter Voltage 30 V
Emitter-Collector Voltage 7.0 V
Collector-Base Voltage 70 V
Collector Current-Continuous 150 mA
Detector Power Dissipation @ T
Derate above 25°C
Input-Output Isolation Voltage (f = 60Hz, t = 1 min.)
Total Device Power Dissipation @ T
Derate above 25°C
= 25°C
A
A
= 25°C
(1)(2)(3)
150
1.76
mW
mW/°C
2500 Vac(rms)
250
2.94
mW
mW/°C
Ambient Operating Temperature Range -40 to +100 °C
Storage Temperature Range -40 to +150 °C
Lead Soldering Temperature
260 °C
(1/16 " from case, 10 sec. duration)
Notes:
1. Isolation Surge Voltage, V
, is an internal device dielectric breakdown rating.
ISO
2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.
3. V
rating of 2500 V
ISO
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC211M, MOC212M, MOC213M Rev. 1.0.1 2
for t = 1 min. is equivalent to a rating of 3,000 V
AC(rms)
AC(rms)
for t = 1 sec.
Ω
MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output
Electrical Characteristics
(T
= 25°C unless otherwise specified)
A
Symbol Parameter Test Conditions Min. Typ.* Max. Unit
EMITTER
V
Input Forward Voltage I
F
Reverse Leakage Current V
I
R
Input Capacitance 18 pF
C
IN
DETECTOR
I
CEO1
I
CEO2
BV
Collector-Emitter Dark Current V
Collector-Emitter Breakdown
CEO
Voltage
BV
Emitter-Collector Breakdown
ECO
Voltage
C
Collector-Emitter Capacitance f = 1.0MHz, V
CE
COUPLED
CTR Collector-Output Current
MOC211M
MOC212M
MOC213M
V
R
V
CE (sat)
C
Isolation Surge Voltage
ISO
Isolation Resistance
ISO
Collector-Emitter Saturation Voltage I
Isolation Capacitance
ISO
Tu r n-On Time I
t
on
Tu r n-Off Time I
t
off
Rise Time I
t
r
Fall Time I
t
f
(2)
(2)
(4)
(1)(2)(3)
= 10mA 1.15 1.5 V
F
= 6.0V 0.001 100 µA
R
= 10V, T
CE
= 10V, T
V
CE
I
= 100µA 30 100 V
C
I
= 100µA 7.0 10 V
E
= 10mA, V
I
F
= 25°C
A
= 100°C
A
= 0 7.0 pF
CE
= 10V
CE
1.0
1.0
50 nA
µA
20
50
100
f = 60 Hz AC Peak, t = 1 min. 2500 Vac(rms)
V = 500V 10
= 2.0mA, I
C
= 10mA 0.4 V
F
11
V = 0V, f = 1MHz 0.2 pF
= 2.0mA, V
C
= 10V, R
CC
= 100 Ω
L
7.5 µs
(Fig. 10)
= 2.0mA, V
C
= 10V, R
CC
= 100 Ω
L
5.7 µs
(Fig. 10)
= 2.0mA, V
C
= 10V, R
CC
= 100 Ω
L
3.2 µs
(Fig. 10)
= 2.0mA, V
C
= 10V, R
CC
= 100 Ω
L
4.7 µs
(Fig. 10)
%
*Typical values at T
= 25°C
A
Notes:
1. Isolation Surge Voltage, V
, is an internal device dielectric breakdown rating.
ISO
2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.
rating of 2500 V
3. V
ISO
4. Current Transfer Ratio (CTR) = I
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC211M, MOC212M, MOC213M Rev. 1.0.1 3
for t = 1 min. is equivalent to a rating of 3,000 V
AC(rms)
/I
x 100%.
C
F
AC(rms)
for t = 1 sec.
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