Fairchild MOC205M, MOC206M, MOC207M, MOC208M service manual

MOC205M, MOC206M, MOC207M, MOC208M — Small Outline Optocouplers Transistor Output

April 2009

MOC205M, MOC206M, MOC207M, MOC208M
Small Outline Optocouplers Transistor Output

Features

■

U.L. recognized (File #E90700, Volume 2)
VDE recognized (File #136616)

■

(add option “V” for VDE approval, i.e, MOC205VM)

■

Closely matched current transfer ratios
Convenient plastic SOIC-8 surface mountable

■

package style

■

Minimum BV
Standard SOIC-8 footprint, with 0.050" lead spacing

■

■

Compatible with dual wave, vapor phase and

of 70 Volts guaranteed

CEO

IR reflow soldering
High input-output isolation of 2500 V

■

AC(rms)

guaranteed

Applications

■

Feedback control circuits
Interfacing and coupling systems of different

■

potentials and impedances

■

General purpose switching circuits
Monitor and detection circuits

■

Description

These devices consist of a gallium arsenide infrared
emitting diode optically coupled to a monolithic silicon
phototransistor detector, in a surface mountable, small
outline, plastic package. They are ideally suited for high
density applications, and eliminate the need for through­the-board mounting.

Schematic

1

N/C

2

3

4

CATHODE

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC205M, MOC206M, MOC207M, MOC208M Rev. 1.0.1

N/CANODE

8

7

BASE

COLLECTORN/C

6

EMITTER

5

MOC205M, MOC206M, MOC207M, MOC208M — Small Outline Optocouplers Transistor Output

Absolute Maximum Ratings

(T

= 25°C Unless otherwise specified)

A

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.

Symbol Rating Value Unit

EMITTER

I

F

I

(pk) Forward Current – Peak (PW = 100µs, 120pps) 1.0 A

F

V

R

P

D

DETECTOR

V

CEO

V

ECO

V

CBO

I

C

P

D

TOTAL DEVICE

V

ISO

P

D

T

A

T

stg

Forward Current – Continuous 60 mA

Reverse Voltage 6.0 V

LED Power Dissipation @ T
Derate above 25°C

= 25°C

A

90

0.8

mW

mW/°C

Collector-Emitter Voltage 70 V

Emitter-Collector Voltage 7.0 V

Collector-Base Voltage 70 V

Collector Current-Continuous 150 mA

Detector Power Dissipation @ T
Derate above 25°C

Input-Output Isolation Voltage (f = 60Hz, t = 1 min.)

Total Device Power Dissipation @ T
Derate above 25°C

= 25°C

A

A

= 25°C

(1)(2)(3)

150

1.76

mW

mW/°C

2500 Vac(rms)

250

2.94

mW

mW/°C

Ambient Operating Temperature Range -40 to +100 °C

Storage Temperature Range -40 to +150 °C

Notes:

1. Isolation Surge Voltage, V

, is an internal device dielectric breakdown rating.

ISO

2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.

3. V

rating of 2500 V

ISO

for t = 1 min. is equivalent to a rating of 3,000 V

AC(rms)

AC(rms)

for t = 1 sec.

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC205M, MOC206M, MOC207M, MOC208M Rev. 1.0.1 2

Ω

MOC205M, MOC206M, MOC207M, MOC208M — Small Outline Optocouplers Transistor Output

Electrical Characteristics

(T

= 25°C unless otherwise specified)

A

Symbol Parameter Test Conditions Min. Typ.* Max. Unit

EMITTER

V

Input Forward Voltage I

F

Reverse Leakage Current V

I

R

C

Input Capacitance 18 pF

IN

DETECTOR

I

CEO1

I

CEO2

BV

BV

C

Collector-Emitter Dark Current V

Collector-Emitter Breakdown Voltage I

CEO

Emitter-Collector Breakdown Voltage I

ECO

Collector-Emitter Capacitance f = 1.0 MHz, V

CE

COUPLED

CTR Collector-Output Current

MOC205M
MOC206M
MOC207M
MOC208M1

V

R

V

CE (sat)

C

*Typical values at T

Isolation Surge Voltage

ISO

Isolation Resistance

ISO

Collector-Emitter Saturation Voltage I

Isolation Capacitance

ISO

Tu r n-On Time I

t

on

Tu r n-Off Time I

t

off

Rise Time I

t

r

Fall Time I

t

f

= 25°C

A

(4)

(1)(2)(3)

(2)

(2)

= 10mA 1.15 1.5 V

F

= 6.0V 0.001 100 µA

R

= 10V, T

CE

= 10V, T

V

CE

= 100µA 70 100 V

C

= 100µA 7.0 10 V

E

= 10mA, V

I

F

= 25°C

A

= 100°C

A

= 0 7.0 pF

CE

= 10V

CE

1.0

1.0

40
63

100

40

50 nA

µA

80
125
200
125

f = 60 Hz AC Peak, t = 1 min. 2500 Vac(rms)

V = 500V 10

= 2mA, I

C

= 10mA 0.4 V

F

11

V = 0V, f = 1MHz 0.2 pF

= 2.0mA, V

C

R

= 100 Ω (Fig. 6)

L

= 2.0mA, V

C

R

= 100 Ω (Fig. 6)

L

= 2.0mA, V

C

R

= 100 Ω (Fig. 6)

L

= 2.0 mA, V

C

R

= 100 Ω (Fig. 6)

L

= 10 V,

CC

= 10V,

CC

= 10V,

CC

= 10 V,

CC

7.5 µs

5.7 µs

3.2 µs

4.7 µs

%

Notes:

1. Isolation Surge Voltage, V

, is an internal device dielectric breakdown rating.

ISO

2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.

3. V

rating of 2500 V

ISO

4. Current Transfer Ratio (CTR) = I

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC205M, MOC206M, MOC207M, MOC208M Rev. 1.0.1 3

for t = 1 min. is equivalent to a rating of 3,000 V

AC(rms)

/I

x 100%.

C

F

AC(rms)

for t = 1 sec.