Fairchild MJD31CITU, MJD31CTF, MJD31CITU, MJD31CTF Schematic

MJD31/31C NPN Epitaxial Silicon Transistor

Features

• General Purpose Amplifier

• Low Speed Switching Applications

• Load Formed for Surface Mount Application (No Suffix)

• Straight Lead (I-PAK, “- I” Suffix)

• Electrically Similar to Popular TIP31 and TIP31C

MJD31/31C — NPN Epitaxial Silicon Transistor

February 2012

11

Absolute Maximum Ratings T

a

D-PAK I-PAK

1.Base 2.Collector 3.Emitter

= 25°C unless otherwise noted

Symbol Parameter Value Units

V

T

CBO

CEO

EBO

I

PC

T

STG

C

CP

B

J

Collector-Base Voltage

: MJD31 : MJD31C

Collector-Emitter Voltage

: MJD31

: MJD31C Emitter-Base Voltage 5 V Collector Current (DC) 3 A Collector Current (Pulse) 1 A Base Current 1 A Collector Dissipation (TC = 25°C) 15 W Collector Dissipation (T Junction Temperature 150 °C Storage Temperature - 65 to 150 °C

= 25°C) 1.56 W

a

40

100

40

100

V V

Ordering Information

Part Number Marking Package Packing Method Remarks

MJD31CTF MJD31C D-PAK Tape & Reel

MJD31CITU MJD31C-I I-PAK Tube

MJD31/31C — NPN Epitaxial Silicon Transistor

Electrical Characteristics T

= 25°C unless otherwise noted

a

Symbol Parameter Test Condition Min. Max. Units

V

(sus) * Collector-Emitter Sustaining Voltage

CEO

: MJD31

: MJD31C

I

CEO

Collector Cut-off Current

: MJD31

: MJD31C

I

CES

Collector Cut-off Current

: MJD31

: MJD31C

I

EBO

hFE

V

(sat) * Collector-Emitter Saturation Voltage IC = 3A, IB = 375mA 1.2 V

CE

Emitter Cut-off Current V * DC Current Gain V

VBE(on) * Base-Emitter On Voltage V

f

T

Current Gain Bandwidth Product V

* Pulse Test: PW≤300μs, Duty Cycle≤2%

= 30mA, IB = 0

I

C

IC = 30mA, IB = 0

= 40V, IB = 0

V

CE

V

= 60V, IB = 0

CE

40

100

50 50

= 40V, V

V

CE

VCE = 100V, V

= 5V, IC = 0 1 mA

BE

= 4V, IC = 1A

CE

V

= 4V, IC = 3A

CE

= 4A, IC = 3A 1.8 V

CE

= 10V, IC = 500mA 3 MHz

CE

BE

= 0

20 20

25 10 50

V V

μA μA

Typical Performance Characteristics

MJD31/31C — NPN Epitaxial Silicon Transistor

1000

100

10

, DC CURRENT GAIN

FE

h

1

0.01 0.1 1 10

IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage

1000

100

10

[pF], CAPACITANCE

ob

C

VCE = 2V

VCE(sat)

IC = 10 I

B

10

1

VBE(sat)

0.1

(sat)[V], SATURATION VOLTAGE

CE

(sat), V

BE

V

0.01 1E-3 0.01 0.1 1 10

IC[A], COLLECTOR CURRENT

Collector-Emitter Saturation Voltage

tC = 10.I

B

1

[μs], TURN ON TIME

D

, t

0.1

R

t

tR, VCC=30V

tR, VCC=10V

tD, VBE(off)=2V

1

0.1 1 10 100

VCB[V], COLLECTOR BASE VOLTAGE

0.01 0.1 1 10

IC[A], COLLECTOR CURRENT

Figure 3. Collector Capacitance Figure 4. Turn On Time

1

0

μ

5

s

0

μ

s

1

m

s

D

C

MJD31C

MJD31

t

1

[μs], TURN OFF TIME

STG

0.1

,t

F

t

0.01 0.1 1 10

STG

tF, VCC=30V

tF, VCC(off)=10V

IC[A], COLLECTOR CURRENT

tC = 10.I

10

B

ICP(max)

IC(max)

1

0.1

[A], COLLECTOR CURRENT

C

I

0.01 1 10 100 1000

VCE[V], COLL E C T O R-EMITTER V O L T A G E

Figure 5. Turn Off Time Figure 6. Safe Operating

Fairchild MJD31CITU, MJD31CTF, MJD31CITU, MJD31CTF Schematic [ru]