MJD31/31C
NPN Epitaxial Silicon Transistor
Features
• General Purpose Amplifier
• Low Speed Switching Applications
• Load Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP31 and TIP31C
MJD31/31C — NPN Epitaxial Silicon Transistor
February 2012
11
Absolute Maximum Ratings T
a
D-PAK I-PAK
1.Base 2.Collector 3.Emitter
= 25°C unless otherwise noted
Symbol Parameter Value Units
V
V
V
T
CBO
CEO
EBO
I
I
I
PC
T
STG
C
CP
B
J
Collector-Base Voltage
: MJD31
: MJD31C
Collector-Emitter Voltage
: MJD31
: MJD31C
Emitter-Base Voltage 5 V
Collector Current (DC) 3 A
Collector Current (Pulse) 1 A
Base Current 1 A
Collector Dissipation (TC = 25°C) 15 W
Collector Dissipation (T
Junction Temperature 150 °C
Storage Temperature - 65 to 150 °C
= 25°C) 1.56 W
a
40
100
40
100
V
V
V
V
Ordering Information
Part Number Marking Package Packing Method Remarks
MJD31CTF MJD31C D-PAK Tape & Reel
MJD31CITU MJD31C-I I-PAK Tube
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
MJD31/31C Rev. A4 1
MJD31/31C — NPN Epitaxial Silicon Transistor
Electrical Characteristics T
= 25°C unless otherwise noted
a
Symbol Parameter Test Condition Min. Max. Units
V
(sus) * Collector-Emitter Sustaining Voltage
CEO
: MJD31
: MJD31C
I
CEO
Collector Cut-off Current
: MJD31
: MJD31C
I
CES
Collector Cut-off Current
: MJD31
: MJD31C
I
EBO
hFE
V
(sat) * Collector-Emitter Saturation Voltage IC = 3A, IB = 375mA 1.2 V
CE
Emitter Cut-off Current V
* DC Current Gain V
VBE(on) * Base-Emitter On Voltage V
f
T
Current Gain Bandwidth Product V
* Pulse Test: PW≤300μs, Duty Cycle≤2%
= 30mA, IB = 0
I
C
IC = 30mA, IB = 0
= 40V, IB = 0
V
CE
V
= 60V, IB = 0
CE
40
100
50
50
= 40V, V
V
CE
VCE = 100V, V
= 5V, IC = 0 1 mA
BE
= 4V, IC = 1A
CE
V
= 4V, IC = 3A
CE
= 4A, IC = 3A 1.8 V
CE
= 10V, IC = 500mA 3 MHz
CE
BE
BE
= 0
= 0
20
20
25
10 50
V
V
μA
μA
μA
μA
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
MJD31/31C Rev. A4 2
Typical Performance Characteristics
MJD31/31C — NPN Epitaxial Silicon Transistor
1000
100
10
, DC CURRENT GAIN
FE
h
1
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
1000
100
10
[pF], CAPACITANCE
ob
C
VCE = 2V
VCE(sat)
IC = 10 I
B
10
1
VBE(sat)
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
1E-3 0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
tC = 10.I
B
1
[μs], TURN ON TIME
D
, t
0.1
R
t
tR, VCC=30V
tR, VCC=10V
tD, VBE(off)=2V
1
0.1 1 10 100
VCB[V], COLLECTOR BASE VOLTAGE
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 3. Collector Capacitance Figure 4. Turn On Time
1
0
0
μ
5
s
0
0
μ
s
1
m
s
D
C
MJD31C
MJD31
t
1
[μs], TURN OFF TIME
STG
0.1
,t
F
t
0.01 0.1 1 10
STG
tF, VCC=30V
tF, VCC(off)=10V
IC[A], COLLECTOR CURRENT
tC = 10.I
10
B
ICP(max)
IC(max)
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
1 10 100 1000
VCE[V], COLL E C T O R-EMITTER V O L T A G E
Figure 5. Turn Off Time Figure 6. Safe Operating
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
MJD31/31C Rev. A4 3
Typical Performance Characteristics (Continued)
MJD31/31C — NPN Epitaxial Silicon Transistor
20
15
10
5
[W], POWER DISSIPATION
C
P
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 7. Power Derating
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
MJD31/31C Rev. A4 4
Physical Dimensions
MJD31/31C — NPN Epitaxial Silicon Transistor
D-PAK
Dimensions in Millimeters
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
MJD31/31C Rev. A4 5
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Definition of Terms
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Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I61
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