Fairchild MCT52XXM service manual

MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers

September 2009

MCT5201M, MCT5210M, MCT5211M Low Input Current Phototransistor Optocouplers

Features

■

High CTR CTR guaranteed 0°C to 70°C

■

High common mode transient rejection 5kV/µs Data rates up to 150kbits/s (NRZ)

■

Underwriters Laboratory (UL) recognized, file #E90700, volume 2

IEC60747-5-2 approved (ordering option V)

■

comparable to Darlingtons

CE(SAT)

Applications

■

CMOS to CMOS/LSTTL logic isolation

■

LSTTL to CMOS/LSTTL logic isolation RS-232 line receiver

■

Telephone ring detector AC line voltage sensing

■

Switching power supply

Description

The MCT52XXM series consists of a high-efficiency AlGaAs, infrared emitting diode, coupled with an NPN phototransistor in a six pin dual-in-line package.

The MCT52XXM is well suited for CMOS to LSTT/TTL interfaces, offering 250% CTR input current. When an LED input current of 1.6mA is supplied data rates to 20K bits/s are possible.

The MCT52XXM can easily interface LSTTL to LSTTL/ TTL, and with use of an external base to emitter resistor data rates of 100K bits/s can be achieved.

Schematic Package Outlines

with 1mA of LED

CE(SAT)

ANODE

CATHODE

1

2

3

6

BASE

5 COL

4 EMITTER

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.

Symbol Parameters Value Units

TOTAL DEVICE

T

STG

T

OPR

T

SOL

P

EMITTER

I

V

(pk) Forward Current - Peak (1 µs pulse, 300 pps) 3.0 A

I

F

P

DETECTOR

I

P

Storage Temperature -55 to +150 °C Operating Temperature -40 to +100 °C Lead Solder Temperature 260 for 10 sec °C Total Device Power Dissipation @ 25°C (LED plus detector) 260 mW

D

Derate Linearly From 25°C 3.5 mW/°C

Continuous Forward Current 50 mA

F

Reverse Input Voltage 6 V

R

LED Power Dissipation 75 mW

D

Derate Linearly From 25°C 1.0 mW/°C

Continuous Collector Current 150 mA

C

Detector Power Dissipation 150 mW

D

Derate Linearly from 25°C 2.0 mW/°C

MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers

∆

Ω

MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers

Electrical Characteristics

(T

= 25°C unless otherwise speciﬁed)

A

Individual Component Characteristics

Symbol Parameters Test Conditions Device Min. Typ.* Max. Units

EMITTER

V

V C

Input Forward Voltage I

F

Forward Voltage Temp. Coefﬁcient I

F

T

A

Reverse Voltage I

R

Junction Capacitance V

J

= 5mA All 1.25 1.5 V

F

= 2mA All -1.75 mV/°C

F

= 10µA All 6 V

R

= 0V, f = 1.0MHz All 18 pF

F

DETECTOR

BV BV BV

I

CER

C C C

Collector-Emitter Breakdown Voltage I

CEO

Collector-Base Breakdown Voltage I

CBO

Emitter-Base Breakdown Voltage I

EBO

Collector-Emitter Dark Current V

Capacitance, Collector to Emitter V

CE

Capacitance, Collector to Base V

CB

Capacitance, Emitter to Base V

EB

= 1.0mA, I

C

= 10µA, I

C

= 10µA, I

E

= 10V, I

CE

R

= 1M Ω

BE

= 0, f = 1MHz All 10 pF

CE

= 0, f = 1MHz All 80 pF

CB

= 0, f = 1MHz All 15 pF

EB

= 0 All 30 100 V

F

= 0 All 30 120 V

F

= 0 All 5 10 V

F

= 0,

F

All 1 100 nA

Isolation Characteristics

Symbol Characteristic Test Conditions Device Min. Typ.* Max. Units

V

R C CM

CM

*All typical T

Input-Output Isolation

ISO

H

(10)

Voltage Isolation Resistance Isolation Capacitance Common Mode Transient V

Rejection – Output HIGH V

Common Mode Transient V

L

Rejection – Output LOW V

= 25°C

A

(10)

f = 60Hz, t = 1 sec. All 7500 Vac(peak)

11

(9)

V

= 500 VDC, T

I-O

V

= 0, f = 1 MHz All 0.4 0.6 pF

I-O

= 50 V

CM

= 0

I

F

= 50 V

CM

= 0

I

F

= 50 V

CM

=1.6mA

I

F

= 50 V

CM

= 5mA

I

F

= 25°C All 10

A

P-P1

P-P

P-P1

, R

= 750 Ω ,

L

= 1K Ω ,

L

= 750 Ω ,

L

= 1K Ω ,

L

MCT5210M/11M 5000 V/µs

MCT5201M

MCT5210M/11M 5000 V/µs

MCT5201M

MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers

Electrical Characteristics

(Continued) (T

= 25°C unless otherwise speciﬁed)

A

Transfer Characteristics

Symbol Characteristics Test Conditions Device Min. Typ.* Max. Units

DC CHARACTERISTICS

CTR

CE(SAT)

Saturated Current Tr ansfer Ratio (Collector to Emitter)

CTR

Current Transfer Ratio

(CE)

(Collector to Emitter)

CTR

Current Transfer Ratio

(CB)

Collector to Base

V

CE(SAT)

Saturation Voltage IF = 5mA, ICE = 6mA MCT5201M 0.4 V

AC CHARACTERISTICS

T

PHL

Propagation Delay HIGH-to-LOW

T

PLH

Propagation Delay LOW-to-HIGH

d

t

r

s

t

f

Delay Time

Rise Time

Storage Time

Fall Time

= 25°C

A

t

*All typicals at T

(1)

(3)

(4)

(5)

(6)

(7)

(8)

I

(2)

= 5mA, V

F

= 3.0mA, V

I

F

= 1.6mA, V

I

F

= 1.0mA, V

I

F

I

= 3.0mA, V

F

(1)

= 1.6mA, V

I

F

= 1.0mA, V

I

F

I

= 5mA, VCB = 4.3V MCT5201M 0.28 %

F

= 3.0mA, VCE = 4.3V MCT5210M 0.2

I

F

= 1.6mA, VCE = 4.3V MCT5211M 0.3

I

F

= 1.0mA, VCE = 4.3V 0.25

I

F

= 3.0mA, ICE = 1.8mA MCT5210M 0.4

I

F

= 1.6mA, ICE = 1.6mA MCT5211M 0.4

I

F

= 0.4V MCT5201M 120 %

CE

= 0.4V MCT5210M 60

CE

= 0.4V MCT5211M 100

CE

= 0.4V 75

CE

= 5.0V MCT5210M 70 %

CE

= 5.0V MCT5211M 150

CE

= 5.0V 110

CE

RL = 330 Ω, RBE = ∞ IF = 3.0mA, R

= 3.3 kΩ, R

L

= 750 Ω, RBE = ∞ IF = 1.6mA,

R

L

R

= 4.7 kΩ, RBE = 91kΩ 15

L

= 1.5 kΩ, RBE = ∞ IF = 1.0mA,

R

L

R

= 10 kΩ, RBE = 160kΩ 24

L

= 0.4V, VCC = 5V,

V

CE

= ﬁg. 13, RBE = 330kΩ

R

L

= 39kΩ 7

BE

RL = 330 Ω, RBE = ∞ IF = 3.0mA, R

= 3.3 kΩ, R

L

= 750 Ω, R

R

L

R

= 4.7 kΩ, R

L

= 1.5 kΩ, R

R

L

R

= 10 kΩ, R

L

= 0.4V, VCC = 5V,

V

CE

= ﬁg. 13, RBE = 330kΩ

R

L

= 39kΩ 8

BE

= ∞ IF = 1.6mA,

BE

= 91kΩ 11

BE

= ∞ IF = 1.0mA,

BE

= 160kΩ 16

BE

VCE = 0.4V, RBE = 330kΩ,

= 1 kΩ, VCC = 5V

R

L

VCE = 0.4V, RBE = 330kΩ,

= 1 kΩ, VCC = 5V

R

L

VCE = 0.4V, RBE = 330 kΩ,

= 1 kΩ, VCC = 5V

R

L

VCE = 0.4V, RBE = 330 kΩ,

= 1 kΩ, VCC = 5V

R

L

MCT5210M 10 µs

= 5.0V

V

CC

MCT5211M 14

= 5.0V

V

CC

17

= 5.0V

V

CC

I

= 5mA MCT5201M 3 30

F

MCT5210M 0.4 µs

= 5.0V

V

CC

MCT5211M 2.5

= 5.0V

V

CC

7

= 5.0V

V

CC

I

= 5mA MCT5201M 12 13

F

I

= 5mA MCT5201M 1.1 15 µs

F

I

= 5mA MCT5201M 2.5 20 µs

F

I

= 5mA MCT5201M 10 13 µs

F

I

= 5mA MCT5201M 16 30 µs

F

Notes:

1. DC Current Transfer Ratio (CTR current (I

) x 100%, at a speciﬁed voltage between the collector and emitter (VCE).

F

2. The collector base Current Transfer Ratio (CTR divided by the input LED current (I

3. Referring to Figure 14 the T

) is deﬁned as the transistor collector current (ICE) divided by the input LED

CE

) is deﬁned as the transistor collector base photocurrent(ICB)

) time 100%.

F

propagation delay is measured from the 50% point of the rising edge of the data

PHL

CB

input pulse to the 1.3V point on the falling edge of the output pulse.

4. Referring to Figure 14 the T

propagation delay is measured from the 50% point of the falling edge of data input

PLH

pulse to the 1.3V point on the rising edge of the output pulse.

5. Delay time (t

6. Rise time (t

7. Storage time (t

8. Fall time (t

9. C

is the capacitance between the input (pins 1, 2, 3 connected) and the output, (pin 4, 5, 6 connected).

ISO

) is measured from 50% of rising edge of LED current to 90% of Vo falling edge.

d

) is measured from 90% to 10% of Vo falling edge.

r

) is measured from 50% of falling edge of LED current to 10% of Vo rising edge.

s

) is measured from 10% to 90% of Vo rising edge.

f

10. Device considered a two terminal device: Pins 1, 2, and 3 shorted together, and pins 5, 6 and 7 are shorted together.

MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers

Safety and Insulation Ratings

As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.

Symbol Parameter Min. Typ. Max. Unit

MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers

Installation Classiﬁcations per DIN VDE 0110/1.89

Ta ble 1 For Rated Main Voltage < 150Vrms I-IV For Rated Main voltage < 300Vrms I-IV Climatic Classiﬁcation 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2

CTI Comparative Tracking Index 175 V

PR

Input to Output Test Voltage, Method b,

V

x 1.875 = VPR, 100% Production Test

IORM

1594 V

peak

with tm = 1 sec, Partial Discharge < 5pC

Input to Output Test Voltage, Method a,

V

x 1.5 = VPR, Type and Sample Test

IORM

1275 V

peak

with tm = 60 sec, Partial Discharge < 5pC

V

IORM

V

IOTM

Max. Working Insulation Voltage 850 V

Highest Allowable Over Voltage 6000 V

peak

External Creepage 7 mm External Clearance 7 mm

Insulation Thickness 0.5 mm

RIO Insulation Resistance at Ts, V

= 500V 10

IO

9

Ω

Typical Performance Curves

MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers

Fig. 1 LED Forward Voltage vs. Forward Current

2.0

1.8

1.6

1.4

TA = -40°C

1.2

TA = 25°C

– FORWARD VOLTAGE (V)

1.0

F

V

0.8

0.1 1 10

TA = 100°C

IF – LED FORWARD CURRENT (mA)

Fig. 3 Normalized CTR vs. Temperature

1.4

Normalized to:

= 5mA

I

F

1.2

1.0

0.8

0.6

0.4

0.2

0.0

NORMALIZED CURRENT TRANSFER RATIO

= 5V

V

CE

= 25°C

T

A

-40 -20 100 120

= 10mA

I

F

-20 0 20 40 60

– AMBIENT TEMPERATURE (°C)

T

A

= 5mA

I

F

I

= 2mA

F

= 1mA

I

F

= 0.5mA

I

F

I

= 0.2mA

F

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

100 0.1

NORMALIZED CURRENT TRANSFER RATIO

10

1

–

CE

0.1

0.01

NORMALIZED I

0.001

COLLECTOR-EMITTER CURRENT

0.0001

0.1 1 10

Fig. 2 Normalized Current Transfer Ratio vs.

Forward Current

Normalized to:

= 5mA

I

F

= 5V

V

CE

= 25°C

T

A

110

I

– FORWARD CURRENT (mA)

F

Fig. 4 Normalized Collector vs.

Collector-Emitter Voltage

I

= 10mA

F

I

= 5mA

I

F

= 1mA

I

F

= 0.5mA

I

F

IF = 0.2mA

Normalized to:

= 5mA

I

F

= 5V

V

CE

= 25°C

T

A

V

– COLLECTOR-EMITTER VOLTAGE (V)

CE

F

= 2mA

Fig. 5 Normalized Collector Base Photocurrent

Ratio vs. Forward Current

100

10

1

– COLLECTOR-BASE

CB

0.1

PHOTO CURRENT

0.01

NORMALIZED I

0.1 1 10010

– FORWARD CURRENT (mA)

I

F

Normalized to:

= 5mA

I

F

= 4.3V

V

CB

= 25°C

T

A

NORMALIZED COLLECTOR-BASE

Fig. 6 Normalized Collector-Base Current

vs. Temperature

10

= 10mA

I

F

I

= 5mA

1

0.1

CURRENT

0.01

Normalized to:

= 5mA

I

F

= 4.3V

V

CB

= 25°C

T

A

0.001

-60 -40 -20 0 20 40 60 80 100

– AMBIENT TEMPERATURE (°C)

T

A

F

= 1mA

I

F

I

= 0.5mA

F

IF = 0.2mA

= 2mA

I

F

Typical Performance Curves (Continued)

MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers

Fig. 7 Collector-Emitter Dark Current vs.

Ambient Temperature

10000

IF = 0mA

= 10V

V

CE

1000

100

10

– DARK CURRENT (nA)

1

CEO

I

0.1 0102030405060708090

TA – AMBIENT TEMPERATURE (°C) TA – AMBIENT TEMPERATURE (°C)

Fig. 9 Switching Time vs.

30

I

= 10mA

F

V

CC

25

= 1kΩ

R

L

R

BE

20

15

10

t – SWITCHING TIME (µs)

5

0

Ambient Temperature

Refer to Figure 13 for switching time circuit

= 5V

= 100kΩ

t

f

t

PLH

t

s

t

r

– AMBIENT TEMPERATURE (°C)

T

A

t

PHL

t

d

100

120-40 -20 0 20 40 60 80 100

Fig. 8 Switching Time vs.

30

IF = 10mA V

CC

25

= 1kΩ

R

L

R

BE

20

15

10

t – SWITCHING TIME (µs)

5

0

Ambient Temperature

= 5V

= 330kΩ

Refer to Figure 13 for switching time circuit

t

f

t

r

t

PHL

PLH

t

s

t

d

120-40 -20 0 20 40 60 80 100

Fig. 10 Switching Time vs.

Ambient Temperature

20

= 5mA

I

F

= 5V

V

CC

= 1kΩ

R

L

16

= 330kΩ

R

BE

12

8

4

t – SWITCHING TIME (µs)

0

Refer to Figure 13 for switching time circuit

t

f

t

PLH

t

s

t

r

t

PHL

t

d

TA – AMBIENT TEMPERATURE (°C)

120-20-40 0 20 40 60 80 100

Fig. 11 Switching Time vs.

20

= 5mA

I

F

V

CC

R

L

16

R

BE

12

8

4

t – SWITCHING TIME (µs)

0

-40 -20 0 20 40 60 80 100 120

Ambient Temperature

= 5V

= 1kΩ

= 100kΩ

Refer to Figure 13 for switching time circuit

t

f

t

PLH

t

s

t

r

– AMBIENT TEMPERATURE (°C) RBE – BASE-EMITTER RESISTANCE (kΩ)

T

A

t

PHL

t

d

100

t

PLH

IF = 3mA RL = 3.3kΩ

10

VCC = 5V

t – SWITCHING TIME (µs)

T

1

10 100 1000 10000

Fig. 12 Switching Time vs.

Base-Emitter Resistance

t

PLH

IF = 1.6mA RL = 4.7kΩ

= 25°C

A

t

, IF = 1mA, RL = 10kΩ

PLH

t

, IF = 1mA, RL = 10kΩ

PHL

t

, IF = 1.6mA, RL = 4.7kΩ

PHL

t

, IF = 3mA, RL = 3.3kΩ

PHL

MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers

Typical Electro-Optical Characteristics (T

V

= 5.0 V

CC

Pulse Gen

= 50Ω

Z

O

f = 10KHz 10% D.F.

monitor

I

F

100 Ω

tr, tf, td, t

s

TEST CIRCUIT

0

330K

INPUT

(I

1K

V

O

Figure 13.

50%

)

F

t

d

= 25°C unless otherwise specified)

A

= 5.0 V

V

CC

Pulse Gen

= 50Ω

Z

O

f = 10KHz 10% D.F.

monitor

I

F

100 Ω

330K

t

TEST CIRCUIT

1K 4.7K

D1

V

O

, t

PHL

PLH

D2

D3

D4

OUTPUT

)

(V

O

0

90%

t

PHL

t

1.3 V

PLH

1.3 V

10% 10%

t

r

t

s

Figure 14. Switching Circuit Waveforms

90%

t

f

Package Dimensions

Through Hole 0.4" Lead Spacing

8.13–8.89

64

8.13–8.89

64

MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers

6.10–6.60

5.08 (Max.)

3.28–3.53

0.38 (Min.)

(0.86)

1.02–1.78

Pin 1

13

0.41–0.51

0.25–0.36

0.76–1.14

2.54–3.81

2.54 (Bsc)

Surface Mount

7.62 (Typ.)

15° (Typ.)

8.13–8.89

64

0.20–0.30

6.10–6.60

5.08 (Max.)

3.28–3.53

0.38 (Min.)

(0.86)

1.02–1.78

Pin 1

13

0.41–0.51

(1.78)

0.25–0.36

0.76–1.14

2.54–3.81

2.54 (Bsc)

(1.52)

0.20–0.30

10.16–10.80

(2.54)

(0.76)

8.43–9.90

6.10–6.60

Pin 1

(7.49)

(10.54)

13

Rcommended Pad Layout

0.25–0.36

3.28–3.53

5.08

(Max.)

0.38 (Min.)

(0.86)

1.02–1.78

0.41–0.51

0.76–1.14

2.54 (Bsc)

0.16–0.88

(8.13)

0.20–0.30

Note:

All dimensions in mm.

Ordering Information

Order Entry Identiﬁer

Option

No sufﬁx MCT5201M Standard Through Hole Device (50 units per tube)

S MCT5201SM Surface Mount Lead Bend

SR2 MCT5201SR2M Surface Mount; Tape and Reel (1,000 units per reel)

T MCT5201TM 0.4" Lead Spacing

V MCT5201VM IEC60747-5-2 TV MCT5201TVM IEC60747-5-2, 0.4" Lead Spacing SV MCT5201SVM IEC60747-5-2, Surface Mount

SR2V MCT5201SR2VM IEC60747-5-2, Surface Mount, Tape and Reel (1,000 units per reel)

(Example) Description

Marking Information

1

MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers

MCT5201

V X YY Q

43

5

2

6

Deﬁnitions

1Fairchild logo

2Device number

VDE mark (Note: Only appears on parts ordered with VDE

3

option – See order entry table)

4 One digit year code, e.g., ‘7’

5Two digit work week ranging from ‘01’ to ‘53’

6 Assembly package code

*Note – Parts that do not have the ‘V’ option (see deﬁnition 3 above) that are marked with date code ‘325’ or earlier are marked in portrait format.

Carrier Tape Specification

4.5 ± 0.20

0.30 ± 0.05

21.0 ± 0.1

0.1 MAX

User Direction of Feed

Reflow Profile

4.0 ± 0.1

10.1 ± 0.20

12.0 ± 0.1

2.0 ± 0.05

1.5 MIN

Ø

11.5 ± 1.0

9.1 ± 0.20

1.5 ± 0.1/-0

Ø

MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers

1.75 ± 0.10

24.0 ± 0.3

°C

300

280

260°C

260

240

220

200

180

160

Time above

183°C = 90 Sec

140

120

100

1.822°C/Sec Ramp up rate

80

60

40

20

33 Sec

0

0 60 180120 270

Time (s)

>245°C = 42 Sec

360

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries,andis not intended to be an exhaustive list of all such trademarks.

Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™

CROSSVOLT™

CTL™ Current Transfer Logic™ EcoSPARK EfficentMax™ EZSWITCH™*

®

™*

®

Fairchild Fairchild Semiconductor FACT Quiet Series™

®

FACT

®

FAST

®

F-PFS™

®

FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC OPTOPLANAR

®

FastvCore™ FETBench™ FlashWriter FPS™

®

*

PDP SPM™ Power-SPM™

PowerTrench

SM

PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET™

®

SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™

®

ThePower Franchise

TinyBoost™ TinyBuck™

®

TinyLogic

®

TINYOPTO™

™

TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™

®

TRUECURRENT™* µSerDes™

®

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™

®

*

XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failedapplications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technicalandproduct information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary

First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I40

Fairchild MCT52XXM service manual

Specifications and Main Features

Frequently Asked Questions

User Manual