Fairchild MCT52XXM service manual

MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers

September 2009

MCT5201M, MCT5210M, MCT5211M Low Input Current Phototransistor Optocouplers

Features

■

High CTR CTR guaranteed 0°C to 70°C

■

High common mode transient rejection 5kV/µs Data rates up to 150kbits/s (NRZ)

■

Underwriters Laboratory (UL) recognized, file #E90700, volume 2

IEC60747-5-2 approved (ordering option V)

■

comparable to Darlingtons

CE(SAT)

Applications

■

CMOS to CMOS/LSTTL logic isolation

■

LSTTL to CMOS/LSTTL logic isolation RS-232 line receiver

■

Telephone ring detector AC line voltage sensing

■

Switching power supply

Description

The MCT52XXM series consists of a high-efficiency AlGaAs, infrared emitting diode, coupled with an NPN phototransistor in a six pin dual-in-line package.

The MCT52XXM is well suited for CMOS to LSTT/TTL interfaces, offering 250% CTR input current. When an LED input current of 1.6mA is supplied data rates to 20K bits/s are possible.

The MCT52XXM can easily interface LSTTL to LSTTL/ TTL, and with use of an external base to emitter resistor data rates of 100K bits/s can be achieved.

Schematic Package Outlines

with 1mA of LED

CE(SAT)

ANODE

CATHODE

1

2

3

6

BASE

5 COL

4 EMITTER

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.

Symbol Parameters Value Units

TOTAL DEVICE

T

STG

T

OPR

T

SOL

P

EMITTER

I

V

(pk) Forward Current - Peak (1 µs pulse, 300 pps) 3.0 A

I

F

P

DETECTOR

I

P

Storage Temperature -55 to +150 °C Operating Temperature -40 to +100 °C Lead Solder Temperature 260 for 10 sec °C Total Device Power Dissipation @ 25°C (LED plus detector) 260 mW

D

Derate Linearly From 25°C 3.5 mW/°C

Continuous Forward Current 50 mA

F

Reverse Input Voltage 6 V

R

LED Power Dissipation 75 mW

D

Derate Linearly From 25°C 1.0 mW/°C

Continuous Collector Current 150 mA

C

Detector Power Dissipation 150 mW

D

Derate Linearly from 25°C 2.0 mW/°C

MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers

∆

Ω

MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers

Electrical Characteristics

(T

= 25°C unless otherwise speciﬁed)

A

Individual Component Characteristics

Symbol Parameters Test Conditions Device Min. Typ.* Max. Units

EMITTER

V

V C

Input Forward Voltage I

F

Forward Voltage Temp. Coefﬁcient I

F

T

A

Reverse Voltage I

R

Junction Capacitance V

J

= 5mA All 1.25 1.5 V

F

= 2mA All -1.75 mV/°C

F

= 10µA All 6 V

R

= 0V, f = 1.0MHz All 18 pF

F

DETECTOR

BV BV BV

I

CER

C C C

Collector-Emitter Breakdown Voltage I

CEO

Collector-Base Breakdown Voltage I

CBO

Emitter-Base Breakdown Voltage I

EBO

Collector-Emitter Dark Current V

Capacitance, Collector to Emitter V

CE

Capacitance, Collector to Base V

CB

Capacitance, Emitter to Base V

EB

= 1.0mA, I

C

= 10µA, I

C

= 10µA, I

E

= 10V, I

CE

R

= 1M Ω

BE

= 0, f = 1MHz All 10 pF

CE

= 0, f = 1MHz All 80 pF

CB

= 0, f = 1MHz All 15 pF

EB

= 0 All 30 100 V

F

= 0 All 30 120 V

F

= 0 All 5 10 V

F

= 0,

F

All 1 100 nA

Isolation Characteristics

Symbol Characteristic Test Conditions Device Min. Typ.* Max. Units

V

R C CM

CM

*All typical T

Input-Output Isolation

ISO

H

(10)

Voltage Isolation Resistance Isolation Capacitance Common Mode Transient V

Rejection – Output HIGH V

Common Mode Transient V

L

Rejection – Output LOW V

= 25°C

A

(10)

f = 60Hz, t = 1 sec. All 7500 Vac(peak)

11

(9)

V

= 500 VDC, T

I-O

V

= 0, f = 1 MHz All 0.4 0.6 pF

I-O

= 50 V

CM

= 0

I

F

= 50 V

CM

= 0

I

F

= 50 V

CM

=1.6mA

I

F

= 50 V

CM

= 5mA

I

F

= 25°C All 10

A

P-P1

P-P

P-P1

, R

= 750 Ω ,

L

= 1K Ω ,

L

= 750 Ω ,

L

= 1K Ω ,

L

MCT5210M/11M 5000 V/µs

MCT5201M

MCT5210M/11M 5000 V/µs

MCT5201M

MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers

Electrical Characteristics

(Continued) (T

= 25°C unless otherwise speciﬁed)

A

Transfer Characteristics

Symbol Characteristics Test Conditions Device Min. Typ.* Max. Units

DC CHARACTERISTICS

CTR

CE(SAT)

Saturated Current Tr ansfer Ratio (Collector to Emitter)

CTR

Current Transfer Ratio

(CE)

(Collector to Emitter)

CTR

Current Transfer Ratio

(CB)

Collector to Base

V

CE(SAT)

Saturation Voltage IF = 5mA, ICE = 6mA MCT5201M 0.4 V

AC CHARACTERISTICS

T

PHL

Propagation Delay HIGH-to-LOW

T

PLH

Propagation Delay LOW-to-HIGH

d

t

r

s

t

f

Delay Time

Rise Time

Storage Time

Fall Time

= 25°C

A

t

*All typicals at T

(1)

(3)

(4)

(5)

(6)

(7)

(8)

I

(2)

= 5mA, V

F

= 3.0mA, V

I

F

= 1.6mA, V

I

F

= 1.0mA, V

I

F

I

= 3.0mA, V

F

(1)

= 1.6mA, V

I

F

= 1.0mA, V

I

F

I

= 5mA, VCB = 4.3V MCT5201M 0.28 %

F

= 3.0mA, VCE = 4.3V MCT5210M 0.2

I

F

= 1.6mA, VCE = 4.3V MCT5211M 0.3

I

F

= 1.0mA, VCE = 4.3V 0.25

I

F

= 3.0mA, ICE = 1.8mA MCT5210M 0.4

I

F

= 1.6mA, ICE = 1.6mA MCT5211M 0.4

I

F

= 0.4V MCT5201M 120 %

CE

= 0.4V MCT5210M 60

CE

= 0.4V MCT5211M 100

CE

= 0.4V 75

CE

= 5.0V MCT5210M 70 %

CE

= 5.0V MCT5211M 150

CE

= 5.0V 110

CE

RL = 330 Ω, RBE = ∞ IF = 3.0mA, R

= 3.3 kΩ, R

L

= 750 Ω, RBE = ∞ IF = 1.6mA,

R

L

R

= 4.7 kΩ, RBE = 91kΩ 15

L

= 1.5 kΩ, RBE = ∞ IF = 1.0mA,

R

L

R

= 10 kΩ, RBE = 160kΩ 24

L

= 0.4V, VCC = 5V,

V

CE

= ﬁg. 13, RBE = 330kΩ

R

L

= 39kΩ 7

BE

RL = 330 Ω, RBE = ∞ IF = 3.0mA, R

= 3.3 kΩ, R

L

= 750 Ω, R

R

L

R

= 4.7 kΩ, R

L

= 1.5 kΩ, R

R

L

R

= 10 kΩ, R

L

= 0.4V, VCC = 5V,

V

CE

= ﬁg. 13, RBE = 330kΩ

R

L

= 39kΩ 8

BE

= ∞ IF = 1.6mA,

BE

= 91kΩ 11

BE

= ∞ IF = 1.0mA,

BE

= 160kΩ 16

BE

VCE = 0.4V, RBE = 330kΩ,

= 1 kΩ, VCC = 5V

R

L

VCE = 0.4V, RBE = 330kΩ,

= 1 kΩ, VCC = 5V

R

L

VCE = 0.4V, RBE = 330 kΩ,

= 1 kΩ, VCC = 5V

R

L

VCE = 0.4V, RBE = 330 kΩ,

= 1 kΩ, VCC = 5V

R

L

MCT5210M 10 µs

= 5.0V

V

CC

MCT5211M 14

= 5.0V

V

CC

17

= 5.0V

V

CC

I

= 5mA MCT5201M 3 30

F

MCT5210M 0.4 µs

= 5.0V

V

CC

MCT5211M 2.5

= 5.0V

V

CC

7

= 5.0V

V

CC

I

= 5mA MCT5201M 12 13

F

I

= 5mA MCT5201M 1.1 15 µs

F

I

= 5mA MCT5201M 2.5 20 µs

F

I

= 5mA MCT5201M 10 13 µs

F

I

= 5mA MCT5201M 16 30 µs

F