MBR0520L
Features
• 0.5 Ampere, low forward voltage, less then 385mV
• 400 milliwatt Power Dissipation package
• Compact surface mount package with the same
footprint as mini-melf
Schottky Rectifier
SOD123
SOD123
SOD123
Color Band Denotes
Mark: B4
Color Band Denotes Cathode
Mark: B2
Cathode
Mark: B2
Mark: B2
Actual Size
MBR0520L
Absolute Maximum Ratings* T
Symbol
V
Maximum Repetitive Reverse Voltage 20 V
RRM
I
Average Rectified Forward Current 500 mA
F(AV)
I
Non Repetitive Peak Forward Current
FSM
T
Storage Temperature Range -65 to +150
stg
T
j max
(Surge applied at rated load conditions half wave, single phase, 60 Hz)
Operating Junction Temperature -65 to +125
= 25°C unless otherwise noted
A
Parameter
Value
5.5 A
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
R
JA
θ
R
JL
θ
Thermal Resistance Junction to Ambient* 340
Thermal Resistance Junction to Lead 150
*FR-4 or FR-5 = 3.5 x 1.5 inches using minimum recommended Land Pads.
Electrical Characteristics T
Symbol
VF Forward Voltage @ IF = 100 mA,
IR Reverse Current @ VR = 10 V,
Parameter
Parameter
= 25°C unless otherwise noted
A
= 100 mA, TA = 100 °C
IF
= 500 mA,
IF
= 500 mA, TA = 100 °C
IF
= 10 V, TA = 100 °C
VR
= 20 V,
VR
= 20 V, TA = 100 °C
VR
Value
Value
300
220
385
330
75
5.0
250
8.0
Units
C
°
C
°
Units
C/W
°
C/W
°
Units
mV
mV
mV
mV
µA
mA
µA
mA
2001 Fairchild Semiconductor Corporation
MBR0520L, Rev. B
T ypical Characteristics
MBR0520L
Schottky Rectifier
(continued)
1
[A]
F
0.5
0.1
100 C
o
o
-25 C
0.01
o
+25 C
0.001
75 C
o
Forward Current, I
0.0001
0 0.1 0.2 0.3 0.4 0.5
Forward Voltage, VF [V]
Figure 1. Forward Voltage Characteristics
120
110
[pF]
100
T
90
80
70
60
50
Total Capacitance, C
40
0 2 4 6 8 10 12 14 16 18 20
Reverse Voltage, VR [V]
40
20
10
[mA]
R
0.1
5
2
1
125 C
100 C
o
75 C
o
25 C
o
o
Reverse Current, I
0.01
0 5 10 15 20
Reverse Voltage, VR[V]
Figure 2. Reverse Current vs Reverse Voltage
Figure 3. Total Capacitance
MBR0520L, Rev. B