Fairchild LMV321, LMV358, LMV324 service manual

Features at +2.7V
•80µA supply current per channel
• 1.2MHz gain bandwidth product
• Output voltage range: 0.01V to 2.69V
• Input voltage range: -0.25V to +1.5V
• 1.5V/µs slew rate
• LMV321 directly replaces other industry standard LMV321 amplifiers; available in SC70-5 and SOT23-5 packages
• LMV358 directly replaces other industry standard LMV358 amplifiers; available in MSOP-8 and SOIC-8 packages
• LMV324 directly replaces other industry standard LMV324 amplifiers; available in TSSOP-14 and SOIC-14 packages
• Fully specified at +2.7V and +5V supplies
• Operating temperature range: -40°C to +125°C
Applications
• Low cost general purpose applications
• Cellular phones
• Personal data assistants
• A/D buffer
• DSP interface
• Smart card readers
• Portable test instruments
• Keyless entry
• Infrared receivers for remote controls
•Telephone systems
• Audio applications
• Digital still cameras
• Hard disk drives
• MP3 players
Description
The LMV321 (single), LMV358 (dual), and LMV324 (quad) are a low cost, voltage feedback amplifiers that consume only 80µA of supply current per amplifier. The LMV3XX family is designed to operate from 2.7V (±1.35V) to 5.5V (±2.75V) supplies. The common mode voltage range extends below the negative rail and the output provides rail-to-rail performance.
The LMV3XX family is designed on a CMOS process and provides 1.2MHz of bandwidth and 1.5V/µs of slew rate at a low supply voltage of 2.7V. The combination of low power, rail-to-rail performance, low voltage operation, and tiny pack­age options make the LMV3XX family well suited for use in personal electronics equipment such as cellular handsets, pagers, PDAs, and other battery powered applications.
LMV321, LMV358, LMV324
General Purpose, Low Voltage, Rail-to-Rail Output Amplifiers
www.fairchildsemi.com
Rev. 1 November 2002
Typical Application
查询LMV321AP5NL供应商
Frequency Response vs. C
CL = 200pF
= 0
R
s
CL = 50pF
= 0
R
s
CL = 20pF
R
s
+
R
­10k
Frequency (MHz)
s
0.1
C
2k
L
Magnitude (1dB/div)
10k
0.01
= 0
L
CL = 200pF R
CL = 100pF R
CL = 10pF R
1
= 225
s
= 0
s
= 0
s
CL = 2pF
= 0
R
s
10
+In
R
g
+V
s
+
LMV3XX
-
6.8µF
+
0.01µF
R
f
Out
DATA SHEET LMV321/LMV358/LMV324
2 Rev. 1 November 2002
LMV321
SC70-5
LMV358
MSOP-8
SOIC-8
LMV324
TSSOP-14
SOT23-5
Pin Assignments
SOIC-14
+In
-V
s
-In
Out1
-In1
+In1
-V
s
1
2
3
1
2
3
4
+
-
+
+V
5
4
8
7
6
-
+
5
s
Out
+V
s
Out2
-In2
+In2
Out1
-In1
+In1
+In
-V
-In
-V
1
+
2
s
3
1
2
-
+
3
4
s
-
+
+V
5
4
8
7
6
5
s
Out
+V
s
Out2
-In2
+In2
Out1
-In1
+In1
+V
s
+In2
-In2
Out2
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Out4
-In4
+In4
-V
s
+In3
-In3
Out3
Out1
-In1
+In1
+V
+In2
-In2
Out2
1
2
3
4
s
5
6
7
14
13
12
11
10
9
8
Out4
-In4
+In4
-V
s
+In3
-In3
Out3
LMV321/LMV358/LMV324 DATA SHEET
Rev. 1 November 2002 3
Absolute Maximum Ratings
Parameter Min. Max. Unit
Supply Voltages 0+6V Maximum Junction Temperature +175 °C Storage Temperature Range -65 +150 °C Lead Temperature, 10 seconds +260 °C Input Voltage Range -
Vs-0.5 +Vs+0.5
V
Electrical Specifications
(Tc= 25°C, Vs= +2.7V, G = 2, RL= 10kto Vs/2, Rf= 10k, V
o (DC)
= Vcc/2; unless otherwise noted)
Parameter Conditions Min. Typ. Max. Unit AC Performance
Gain Bandwidth Product CL= 50pF,RL=2kΩ to Vs/2 1.2 MHz Phase Margin 52 deg Gain Margin 17 dB Slew Rate Vo= 1V
pp
1.5 V/µs
Input Voltage Noise >50kHz 36 nV/Hz Crosstalk: LMV358 100kHz 91 dB
LMV324 100kHz 80 dB
DC Performance
Input Offset Voltage
1
1.7 7 mV
Average Drift 8 µV/°C Input Bias Current
2
<1 nA
Input Offset Current
2
<1 nA
Power Supply Rejection Ratio
1
DC 50 65 dB
Supply Current (Per Channel)
1
80 120 µA
Input Characteristics
Input Common Mode Voltage Range1LO 0 -0.25 V
HI 1.5 1.3 V
Common Mode Rejection Ratio
1
50 70 dB
Output Characteristics
Output Voltage Swing RL= 10kto Vs/2; LO
1
0.1 0.01 V
RL= 10kto Vs/2; HI
1
2.69 2.6 V
Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels are determined from tested parameters.
Notes:
1. Guaranteed by testing or statistical analysis at +25°C.
2. +IN and -IN are gates to CMOS transistors with typical input bias current of <1nA. CMOS leakage is too small to practically measure.
Recommended Operating Conditions
Parameter Min. Max. Unit
Operating Temperature Range -40 +125 °C Power Supply Operating Range 2.5 5.5 V
DATA SHEET LMV321/LMV358/LMV324
4 Rev. 1 November 2002
Electrical Specifications
(Tc= 25°C, Vs= +5V, G = 2, RL= 10kto Vs/2, Rf= 10k, V
o (DC)
= Vcc/2; unless otherwise noted)
Parameter Conditions Min. Typ. Max. Unit AC Performance
Gain Bandwidth Product CL= 50pF,RL=2kΩ to Vs/2 1.4 MHz Phase Margin 73 deg Gain Margin 12 dB Slew Rate 1.5 V/µs Input Voltage Noise >50kHz 33 nV/Hz Crosstalk: LMV358 100kHz 91 dB
LMV324 100kHz 80 dB
DC Performance
Input Offset Voltage
1
17mV
Average Drift 6 µV/°C Input Bias Current
2
<1 nA
Input Offset Current
2
<1 nA
Power Supply Rejection Ratio
1
DC 50 65 dB
Open Loop Gain
1
50 70 dB
Supply Current (Per Channel)
1
100 150 µA
Input Characteristics
Input Common Mode Voltage Range1LO 0 -0.4 V
HI 3.8 3.6 V
Common Mode Rejection Ratio
1
50 75 dB
Output Characteristics
Output Voltage Swing RL= 2kto Vs/2; LO/HI 0.036 to 4.95 V
RL= 10kto Vs/2; LO
1
0.1 0.013 V
RL= 10kto Vs/2; HI
1
4.98 4.9 V
Short Circuit Output Current
1
sourcing; Vo= 0V 5 +34 mA sinking; Vo= 5V 10 -23 mA
Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels are determined from tested parameters.
Notes:
1. Guaranteed by testing or statistical analysis at +25°C.
2. +IN and -IN are gates to CMOS transistors with typical input bias current of <1nA. CMOS leakage is too small to practically measure.
Package Thermal Resistance
Package θ
JA
5 lead SC70 331.4°C/W 5 lead SOT23 256°C/W 8 lead SOIC 152°C/W 8 lead MSOP 206°C/W 14 lead TSSOP 100°C/W 14 lead SOIC 88°C/W
LMV321/LMV358/LMV324 DATA SHEET
Rev. 1 November 2002 5
Typical Operating Characteristics
(Tc= 25°C, Vs= +5V, G = 2, RL= 10kto Vs/2, Rf= 10k, V
o (DC)
= Vcc/2; unless otherwise noted)
Non-Inverting Freq. Response Vs = +5V
G = 2
G = 10
G = 5
G = 1
Normalized Magnitude (1dB/div)
0.01
0.1
1
Frequency (MHz)
Non-Inverting Freq. Response Vs = +2.7V
G = 1
G = 2
G = 10
G = 5
Normalized Magnitude (1dB/div)
0.01
0.1
1
Frequency (MHz)
Inverting Frequency Response Vs = +5V
G = -2
G = -1
G = -10
G = -5
Normalized Magnitude (1dB/div)
10
0.01
0.1
1
10
Frequency (MHz)
Inverting Freq. Response Vs = +2.7V
G = -1
G = -2
G = -10
G = -5
Normalized Magnitude (1dB/div)
10
0.01
0.1
1
10
Frequency (MHz)
Frequency Response vs. C
CL = 200pF
= 0
R
s
CL = 50pF
= 0
R
s
CL = 20pF
= 0
R
s
+
R
Magnitude (1dB/div)
10k
0.01
s
­10k
0.1
C
2k
L
1
Frequency (MHz)
Small Signal Pulse Response
0.25
0.2
0.15
0.1
Output (V)
0.05
0
-0.05 02024681012141618
Time (µs)
L
CL = 200pF
= 225
R
s
CL = 100pF
= 0
R
s
CL = 10pF
= 0
R
s
CL = 2pF
= 0
R
s
Frequency Response vs. R
RL = 1k
RL = 10k
Magnitude (1dB/div)
10
0.01
RL = 2k
0.1
L
RL = 100k
1
10
Frequency (MHz)
Large Signal Pulse Response
2.5
2
1.5
0.1
Output (V)
0.5
0
-0.5 02024681012141618
Time (µs)
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