Fairchild HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S service manual

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HUF75343G3, HUF75343P3, HUF75343S3,

HUF75343S3S

Data Sheet March 2003

75A, 55V, 0.009 Ohm, N-Channel UltraFET
Power MOSFETs

These N-Channel pow er MOSFETs
are manufactured using the
innovat ive Ul traFET® pr ocess . This
advanced process technology

achieves the lowest possible on­resistance per silicon area, resulting in outstanding
performance. This device is capable of w ithstanding high
energy in the avalanche mode and the diode exhibits very
low reverse recovery time and stored charge. It was
designed for use in applications where power efficiency is
important, such as switching regulators, switching
converters, motor drivers, relay drivers, low -voltage bus
switches, and power management in portable and battery
operated products .

Formerly developmental type TA75343.

Ordering Information

PART NUMBER PACKAGE BRAND

HUF75343G3 TO-247 75343G
HUF75343P3 TO-220AB 75343P
HUF75343S3 TO-262AA 75343S
HUF75343S3S TO-263AB 75343S

NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75343S3ST.

Features

• 75A, 55V

• Simulation Models

- Temperature Compensating PSPICE® and SABER™
Models

- Thermal Impedance PSPICE™ and SABER Models
Available on the WEB at: www.fairchildsemi.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

Packaging

JEDEC STYLE TO-247 JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN
(TAB)

JEDEC TO-263AB JEDEC TO-262AA

GATE

SOURCE

Product reliabil it y information can be found at http ://www.fairchildsem i.com/products/di s crete/reliability/index.html

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 qualit y systems certification.

DRAIN

(FLANGE)

For severe environments, see our Automotive HUFA series.

DRAIN

(FLANGE)

SOURCE

DRAIN

(FLANGE)

DRAIN

GATE

SOURCE

DRAIN

GATE

©2003 Fairchild Semiconductor Corporation HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S Rev. B1

HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (R

= 20kΩ) (Note 1) . . . . . . . . . . . . . V

GS

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

GS

55 V
55 V

±20 V

Drain Current

Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

DM

AS

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . .T

, T

J

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

75

Figure 4

Figure 6

270

1.81

-55 to 175

300
260

A

W

W/oC

o

C

o

C

o

C

NOTE:

1. T

= 25oC to 150oC.

J

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

DSSID

DSS

GSS

= 250µA, VGS = 0V (Figure 11) 55 - - V

VDS = 50V, VGS = 0V - - 1 µA

= 45V, VGS = 0V, TC = 150oC--250µA

V

DS

VGS = ±20V - - ±100 nA

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

GS(TH)VGS

DS(ON)ID

= VDS, ID = 250µA (Figure 10) 2 - 4 V

= 75A, VGS = 10V (Figure 9) - 0.007 0.009 Ω

THERMAL SPECI FICATIONS

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

SWITCHING SPECIFICATIONS (V

GS

= 10V)
Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t

θJC
θJA

ON

r

f

OFF

(Figure 3) - - 0.55
TO-247 - - 30
TO-220, TO-263 - - 62

VDD = 30V, ID ≅ 75A,

= 0.4Ω, VGS = 10V,

R

L

= 2.5Ω

R

GS

--125ns

-9-ns

-75- ns

-32- ns

-18- ns

- - 75 ns

o

C/W

o

C/W

o

C/W

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q
Gate Charge at 10V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain “Miller” Charge Q

g(TOT)VGS

g(10)

g(TH)

gs
gd

= 0V to 20V VDD = 30V,

≅ 75A,

I

VGS = 0V to 10V - 92 110 nC
VGS = 0V to 2V - 6.0 7.2 nC

D

R

= 0.4Ω

L

I

g(REF)

= 1.0mA

(Figure 13)

- 170 205 nC

-13-nC

-42-nC

©2003 Fairchild Semiconductor Corporation HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S Rev. B1

HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q

Typical Performance Curves

1.2

1.0

0.8

ISS

OSS

RSS

SD

rr

RR

VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)

- 3000 - pF

- 1100 - pF

- 230 - pF

ISD = 75A - - 1.25 V
ISD = 75A, dISD/dt = 100A/µs - - 100 ns
ISD = 75A, dISD/dt = 100A/µs - - 200 nC

80

60

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TC, CASE TEMPERATURE (oC)

125 175

FIGURE 1. NORMALIZED POWER DISSIP ATION vs CASE

TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

JC

θ

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

40

20

, DRAIN CURRENT (A)

D

I

0

25

50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-2

10

-1

10

1/t2

x R

θ

JC

0

10

t

1

t

2

+ T

θ

JC

C

1

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

©2003 Fairchild Semiconductor Corporation HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S Rev. B1