Fairchild H11N1M service manual

H11N1M, H11N2M, H11N3M — 6-Pin DIP High Speed Logic Optocouplers

September 2009

H11N1M, H11N2M, H11N3M 6-Pin DIP High Speed Logic Optocouplers

Features

■

High data rate, 5MHz typical (NRZ) Free from latch up and oscilliation throughout voltage

■

and temperature ranges.

■

Microprocessor compatible drive Logic compatible output sinks 16mA at 0.5V

■

maximum Guaranteed on/off threshold hysteresis

■

Wide supply voltage capability, compatible with all popular logic systems

High common mode transient immunity, 2000V/µs

■

minimum

■

Fast switching t Underwriter Laboratory (UL) recognized—

■

= 7.5ns typical, t

r

= 12ns typical

f

file #E90700

■

VDE recognized—File#102497 – Add option V (e.g., H11N1VM)

Applications

Logic to logic isolator

■

Programmable current level sensor Line receiver—eliminate noise and transient problems

■

A.C. to TTL conversion—square wave shaping Interfaces computers with peripherals

■

Isolated power MOS driver for power supplies

Description

The H11NXM series has a high speed integrated circuit detector optically coupled to an AlGaAs infrared emitting diode. The output incorporates a Schmitt trigger, which provides hysteresis for noise immunity and pulse shaping. The detector circuit is optimized for simplicity of operation and utilizes an open collector output for maximum application flexibility.

Schematic Package Outlines

ANODE

CATHODE

1

2

3

V

6

CC

5 GND

V

4

O

Truth Table

Input Output

HL

LH

H11N1M, H11N2M, H11N3M — 6-Pin DIP High Speed Logic Optocouplers

Absolute Maximum Ratings

(T

= 25°C unless otherwise specified.)

A

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.

Symbol Parameters Value Units

TOTAL DEVICE

T

STG

T

OPR

T

SOL

P

D

EMITTER

I

F

V

R

I

(pk) Forward Current – Peak (1µs pulse, 300 pps) 1.0 A

F

P

D

DETECTOR

P

D

V

O

V

CC

I

O

Storage Temperature -40 to +150 °C Operating Temperature -40 to +85 °C Lead Solder Temperature 260 for 10 sec °C Total Device Power Dissipation @ 25°C 250 mW Derate Above 25°C 2.94 mW/°C

Continuous Forward Current 30 mA Reverse Voltage 6 V

LED Power Dissipation 25°C Ambient 120 mW Derate Linearly From 25°C 1.41 mW/°C

Detector Power Dissipation @ 25°C 150 mW Derate Linearly from 25°C 1.76 mW/°C V

Allowed Range 0 to 16 V

45

V

Allowed Range 0 to 16 V

65

I

Output Current 50 mA

4

H11N1M, H11N2M, H11N3M — 6-Pin DIP High Speed Logic Optocouplers

Electrical Characteristics

(T

= 25°C unless otherwise speciﬁed.)

A

Individual Component Characteristics

Symbol Parameters Test Conditions Device Min. Typ.* Max. Units

EMITTER

V

C

Input Forward Voltage I

F

I

Reverse Current V

R

Capacitance V = 0, f = 1.0MHz All 100 pF

J

= 10mA All 1.4 2 V

F

I

= 0.3mA 0.75 1.25

F

= 5V All 10 µA

R

DETECTOR

V

I

CC(off)

I

OH

Operating Voltage Range All 4 15 V

CC

Supply Current I Output Current, High I

= 0, V

F

CC

= 0.3mA, V

= 5V All 6 10 mA

= V

CC

= 15V All 100 µA

O

Transfer Characteristics

Symbol DC Characteristics Test Conditions Device Min. Typ.* Max. Units

I

F(off)

I

CC(on)

V

OL

I

F(on)

I

F(off)

/ I

Supply Current I Output Voltage, Low R

Tu r n-On Threshold Current R

Tu r n-Off Threshold Current R Hysteresis Ratio R

F(on)

= 10mA, V

F

=270 Ω ,V

L

I

= I

F

F(on)

=270 Ω , V

L

= 270 Ω , V

L

= 270 Ω , V

L

= 5V All 6.5 10 mA

CC

=5V,

All 0.5 V

max.

CC

= 5V

H11N1M 0.8 3.2 mA

(1)

H11N2M 2.3 5 H11N3M 4.1 10

= 5V All 0.3 mA

CC

= 5V All 0.65 0.95

CC

Switching Speed

Symbol AC Characteristics Test Conditions Device Min. Typ.* Max. Units

t

PHL

t

PLH

t

Propagation Delay Time HIGH-to-LOW

Rise Time C = 120pF, t

r

Propagation Delay Time LOW-to-HIGH

Fall Time C = 120pF, t

f

C = 120pF, t

(2)

R

=

, Figure 1

E

(2)

R

=

, Figure 1

E

C = 120pF, t

(2)

R

=

, Figure 1

E

(2)

R

=

, Figure 1

E

= 1µs,

P

= 1µs,

P

= 1µs,

P

= 1µs,

P

All 100 330 ns

All 7.5 ns

All 150 330 ns

All 12 ns

Data Rate All 5 MHz

Isolation Characteristics

Symbol Parameters Test Conditions Min. Typ.* Max. Units

V

ISO

C

ISO

R

ISO

*Typical values at T

Notes:

1. Maximum I would require the LED to be driven at a current greater than 3.2mA to guarantee the device will turn on. A 10% guard band is recommended to account for degradation of the LED over its lifetime. The maximum allowable LED drive current is 30mA.

2. H11N1: R

Input-Output Isolation Voltage f = 60 Hz, t =1 sec. 7500 V Isolation Capacitance V Isolation Resistance V

= 25°C

A

is the maximum current required to trigger the output. For example, a 3.2mA maximum trigger current

F(ON)

= 910 Ω , H11N2: R

E

= 560 Ω , H11N3: R

E

= 0V, f = 1 MHz 0.4 0.6 pF

I-O

= ±500 VDC 10

I-O

= 240 Ω

E

11

PEAK

Ω