Fairchild H11F1M service manual

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≤

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H11F1M, H11F2M, H11F3M — Photo FET Optocouplers

May 2012

H11F1M, H11F2M, H11F3M
Photo FET Optocouplers

Features

As a remote variable resistor:

100 Ω to ≥ 300M Ω

■

■

15pF shunt capacitance

■

100G Ω I/O isolation resistance

As an analog switch:

■

Extremely low offset voltage
60 V

■

■

No charge injection or latch-up
UL recognized (File #E90700)

■

signal capability

pk-pk

Applications

As a remote variable resistor:

■

Isolated variable attenuator
Automatic gain control

■

■

Active filter fine tuning/band switching

As an analog switch:

■

Isolated sample and hold circuit
Multiplexed, optically isolated A/D conversion

■

General Description

The H11FXM series consists of a Gallium-Aluminum­Arsenide IRED emitting diode coupled to a symmetrical
bilateral silicon photo-detector. The detector is electri­cally isolated from the input and performs like an ideal
isolated FET designed for distortion-free control of low
level AC and DC analog signals. The H11FXM series
devices are mounted in dual in-line packages.

Schematic Package Outlines

ANODE

CATHODE

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11F1M, H11F2M, H11F3M Rev. 1.0.5

1

2

3

OUTPUT

6

TERM.

5

OUTPUT

4

TERM.

°C

°C

°C

mA

V

A

mW

mW

H11F1M, H11F2M, H11F3M — Photo FET Optocouplers

Absolute Maximum Ratings

(T

= 25°C unless otherwise specified)

A

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.

Symbol Parameter Device Value

Units

TOTAL DEVICE

T

T

T

STG

OPR

SOL

Storage Temperature All -40 to +150

Operating Temperature All -40 to +100

Lead Solder Temperature All 260 for 10 sec

EMITTER

I

V

I

F(pk)

P

F

R

D

Continuous Forward Current All 60

Reverse Voltage All 5

Forward Current – Peak (10µs pulse, 1% duty cycle) All 1

LED Power Dissipation 25°C Ambient All 100

Derate Linearly from 25°C 1.33

mW/°C

DETECTOR

BV

P

D

4-6

Detector Power Dissipation @ 25°C All 300

Derate linearly from 25°C 4.0

Breakdown Voltage (either polarity) H11F1M,

±30 V

mW/°C

H11F2M

H11F3M ±15 V

I

4-6

Continuous Detector Current (either polarity) All ±100 mA

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11F1M, H11F2M, H11F3M Rev. 1.0.5 2

Ω

Ω

Ω

(T

Electrical Characteristics

= 25°C unless otherwise specified.)

A

Individual Component Characteristics

Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit

EMITTER

V

Input Forward Voltage I

F

I

Reverse Leakage Current V

R

C

Capacitance V = 0 V, f = 1.0MHz All 50 pF

J

OUTPUT DETECTOR

BV

Breakdown Voltage

4-6

Either Polarity

I

R

C

Off-State Dark Current V

4-6

Off-State Resistance V

4-6

Capacitance V

4-6

= 16mA All 1.3 1.75 V

F

= 5V All 10 µA

R

I

= 10µA, I

4-6

= 0 H11F1M, H11F2M 30 V

F

H11F3M 15

= 15 V, I

4-6

V

= 15 V, I

4-6

T

= 100°C

A

= 15 V, I

4-6

= 15 V, I

4-6

= 0 All 50 nA

F

= 0,

F

= 0 All 300 M Ω

F

= 0,

F

All 50 µA

All 15 pF

f = 1MHz

H11F1M, H11F2M, H11F3M — Photo FET Optocouplers

Transfer Characteristics

Symbol Characteristics Test Conditions Device Min Typ* Max Units

DC CHARACTERISTICS

R

On-State Resistance I

4-6

= 16mA,

F

I

= 100µA

4-6

H11F1M 200

H11F2M 330

H11F3M 470

R

On-State Resistance I

6-4

= 16mA,

F

I

= 100µA

6-4

H11F1M 200

H11F2M 330

H11F3M 470

Resistance, non-linearity
and assymetry

= 16mA,

I

F

I

= 25µA RMS,

4-6

All 2 %

f = 1kHz

AC CHARACTERISTICS

t

t

Turn-On Time R

on

Turn-Off Time R

off

= 50 Ω , I

L

V

= 5V

4-6

= 50 Ω , I

L

V

= 5V

4-6

= 16mA,

F

= 16mA,

F

All 45 µs

All 45 µs

Isolation Characteristics

Symbol Characteristic Test Conditions Device Min. Typ.* Max. Units

V

ISO

R

ISO

C

ISO

*All Typical values at T

Isolation Voltage f = 60Hz, t = 1 sec. All 7500 V

Isolation Resistance V

= 500 VDC All 10

I-O

11

AC

PEAK

Isolation Capacitance f = 1MHz All 0.2 pF

= 25°C

A

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11F1M, H11F2M, H11F3M Rev. 1.0.5 3

Safety and Insulation Ratings

As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.

Symbol Parameter Min. Typ. Max. Unit

Installation Classifications per DIN VDE 0110/1.89
Table 1

For Rated Main Voltage < 150Vrms I-IV

For Rated Main voltage < 300Vrms I-IV

Climatic Classification 55/100/21

Pollution Degree (DIN VDE 0110/1.89) 2

CTI Comparative Tracking Index 175

V

PR

Input to Output Test Voltage, Method b, V
= V

, 100% Production Test with tm = 1 sec, Partial

PR

Discharge < 5pC

Input to Output Test Voltage, Method a, V
V

, Type and Sample Test with tm = 60 sec, Partial

PR

Discharge < 5pC

V

IORM

V

IOTM

Max. Working Insulation Voltage 850 V

Highest Allowable Over Voltage 6000 V

External Creepage 7 mm

External Clearance 7 mm

Insulation Thickness 0.5 mm

RIO Insulation Resistance at Ts, V

x 1.875

IORM

x 1.5 =

IORM

= 500V 10

IO

1594 V

1275 V

9

peak

peak

peak

peak

Ω

H11F1M, H11F2M, H11F3M — Photo FET Optocouplers

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11F1M, H11F2M, H11F3M Rev. 1.0.5 4