Fairchild H11F1M service manual

≤

≥

H11F1M, H11F2M, H11F3M — Photo FET Optocouplers

May 2012

H11F1M, H11F2M, H11F3M Photo FET Optocouplers

Features

As a remote variable resistor:

100 Ω to ≥ 300M Ω

■

15pF shunt capacitance

■

100G Ω I/O isolation resistance

As an analog switch:

■

Extremely low offset voltage 60 V

■

No charge injection or latch-up UL recognized (File #E90700)

■

signal capability

pk-pk

Applications

As a remote variable resistor:

■

Isolated variable attenuator Automatic gain control

■

Active filter fine tuning/band switching

As an analog switch:

■

Isolated sample and hold circuit Multiplexed, optically isolated A/D conversion

■

General Description

The H11FXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages.

Schematic Package Outlines

ANODE

CATHODE

1

2

3

OUTPUT

6

TERM.

5

OUTPUT

4

TERM.

°C

mA

V

A

mW

H11F1M, H11F2M, H11F3M — Photo FET Optocouplers

Absolute Maximum Ratings

(T

= 25°C unless otherwise speciﬁed)

A

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.

Symbol Parameter Device Value

Units

TOTAL DEVICE

T

STG

OPR

SOL

Storage Temperature All -40 to +150

Operating Temperature All -40 to +100

Lead Solder Temperature All 260 for 10 sec

EMITTER

I

V

I

F(pk)

P

F

R

D

Continuous Forward Current All 60

Reverse Voltage All 5

Forward Current – Peak (10µs pulse, 1% duty cycle) All 1

LED Power Dissipation 25°C Ambient All 100

Derate Linearly from 25°C 1.33

mW/°C

DETECTOR

BV

P

D

4-6

Detector Power Dissipation @ 25°C All 300

Derate linearly from 25°C 4.0

Breakdown Voltage (either polarity) H11F1M,

±30 V

mW/°C

H11F2M

H11F3M ±15 V

I

4-6

Continuous Detector Current (either polarity) All ±100 mA

Ω

(T

Electrical Characteristics

= 25°C unless otherwise specified.)

A

Individual Component Characteristics

Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit

EMITTER

V

Input Forward Voltage I

F

I

Reverse Leakage Current V

R

C

Capacitance V = 0 V, f = 1.0MHz All 50 pF

J

OUTPUT DETECTOR

BV

Breakdown Voltage

4-6

Either Polarity

I

R

C

Off-State Dark Current V

4-6

Off-State Resistance V

4-6

Capacitance V

4-6

= 16mA All 1.3 1.75 V

F

= 5V All 10 µA

R

I

= 10µA, I

4-6

= 0 H11F1M, H11F2M 30 V

F

H11F3M 15

= 15 V, I

4-6

V

= 15 V, I

4-6

T

= 100°C

A

= 15 V, I

4-6

= 15 V, I

4-6

= 0 All 50 nA

F

= 0,

F

= 0 All 300 M Ω

F

= 0,

F

All 50 µA

All 15 pF

f = 1MHz

H11F1M, H11F2M, H11F3M — Photo FET Optocouplers

Transfer Characteristics

Symbol Characteristics Test Conditions Device Min Typ* Max Units

DC CHARACTERISTICS

R

On-State Resistance I

4-6

= 16mA,

F

I

= 100µA

4-6

H11F1M 200

H11F2M 330

H11F3M 470

R

On-State Resistance I

6-4

= 16mA,

F

I

= 100µA

6-4

H11F1M 200

H11F2M 330

H11F3M 470

Resistance, non-linearity and assymetry

= 16mA,

I

F

I

= 25µA RMS,

4-6

All 2 %

f = 1kHz

AC CHARACTERISTICS

t

Turn-On Time R

on

Turn-Off Time R

off

= 50 Ω , I

L

V

= 5V

4-6

= 50 Ω , I

L

V

= 5V

4-6

= 16mA,

F

= 16mA,

F

All 45 µs

Isolation Characteristics

Symbol Characteristic Test Conditions Device Min. Typ.* Max. Units

V

ISO

R

ISO

C

ISO

*All Typical values at T

Isolation Voltage f = 60Hz, t = 1 sec. All 7500 V

Isolation Resistance V

= 500 VDC All 10

I-O

11

AC

PEAK

Isolation Capacitance f = 1MHz All 0.2 pF

= 25°C

A

Safety and Insulation Ratings

As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.

Symbol Parameter Min. Typ. Max. Unit

Installation Classiﬁcations per DIN VDE 0110/1.89 Table 1

For Rated Main Voltage < 150Vrms I-IV

For Rated Main voltage < 300Vrms I-IV

Climatic Classiﬁcation 55/100/21

Pollution Degree (DIN VDE 0110/1.89) 2

CTI Comparative Tracking Index 175

V

PR

Input to Output Test Voltage, Method b, V = V

, 100% Production Test with tm = 1 sec, Partial

PR

Discharge < 5pC

Input to Output Test Voltage, Method a, V V

, Type and Sample Test with tm = 60 sec, Partial

PR

Discharge < 5pC

V

IORM

V

IOTM

Max. Working Insulation Voltage 850 V

Highest Allowable Over Voltage 6000 V

External Creepage 7 mm

External Clearance 7 mm

Insulation Thickness 0.5 mm

RIO Insulation Resistance at Ts, V

x 1.875

IORM

x 1.5 =

IORM

= 500V 10

IO

1594 V

1275 V

9

peak

Ω

H11F1M, H11F2M, H11F3M — Photo FET Optocouplers

Typical Performance Curves

H11F1M, H11F2M, H11F3M — Photo FET Optocouplers

Figure 1. Resistance vs. Input Current

10

1

r(on) – NORMALIZED RESISTANCE

Normalized to:

= 16mA

I

F

= 5μA RMS

I

46

0.1 1 1 0 100

– INPUT CURRENT (mA)

I

F

Figure 3. LED Forward Voltage vs. Forward Current

2.0

1.8

1.6

Figure 2. Output Characteristics

800

600

400

200

I

= 2mA

F

0

= 6mA

I

-200

– OUTPUT CURRENT (μA)

-400

46

I

-600

-800

F

= 10mA

I

F

= 14mA

I

F

= 18mA

I

F

-0.2 -0.1 0.0

– OUTPUT VOLTAGE (V)

V

46

I

= 18mA

F

I

= 14mA

F

I

= 10mA

F

I

= 6mA

F

I

= 2mA

F

0.1 0.2

Figure 4. Off-state Current vs. Ambient Temperature

10000

NORMALIZED TO: V

= 15V

46

I

= 0mA

F

= 25°C

T

A

1000

1.4

1.2

– FOR WARD VOLTAGE (V)

F

V

1.0

0.8

0.1 101 100

T

= -40°C

A

= 25°C

T

A

= 100°°C

T

A

– LED FOR WARD CURRENT (mA)

I

F

r(on) – CHANGE IN RESISTANCE (%)

100

10

– NORMALIZED DARK CURRENT

46

I

1

0204060

T

A

Figure 5. Resistive Non-Linearity vs. D.C. Bias

5

4

3

2

I

= 10μA RMS

4-6

r(on) = 200Ω

1

80 100

– AMBIENT TEMPERATURE (°C)

0

1 50 100 150 200 250 300 350

– D.C. BIAS VOLTAGE (mV)

V

4-6

Typical Applications

As a Variable Resistor As an Analog Signal Switch

ISOLATED VARIABLE ATTENUATORS

500K

H11F1M

≤ 30mA

F

V

OUT

V

IN

I

F

LOW FREQUENCY HIGH FREQUENCY

DYNAMIC RANGE 70db

@10KHz

FOR 0 ≤ I

V

IN

@1MHz

I

F

H11F1M

DYNAMIC RANGE 50db FOR 0 ≤ IF ≤ 30mA

V

50

OUT

Distortion free attenuation of low level A.C. signals is accomplished by varying the IRED current, I range and absence of coupling capacitors; D.C. level shifting or

Note the wide dynamic

F

parasitic feedback to the controlling function.

Accuracy and range are improved over conventional FET switches because the H11FXM has no charge injection from the control signal. The H11FXM also provides switching of either polarity input signal up to 30V magnitude..

ISOLATED SAMPLE AND HOLD CIRCUIT

+

V

IN

H11F1M

I

F

-

C

H11F1M, H11F2M, H11F3M — Photo FET Optocouplers

V

IN

I

V

F

OUT

V

OUT

t

AUTOMATIC GAIN CONTROL

V

H11F1M

IN

+

-

500K

I

F

AGC

SIGNAL

V

OUT

This simple circuit provides over 70db of stable gain control for an AGC signal range of from 0 to 30mA. This basic circuit can be used to provide programmable fade and attack for electronic music.

ACTIVE FILTER FINE TUNING/BAND SWITCHING

I

F1

A1

I

ADJUSTS f1, IF2 ADJUSTS f

F1

H11F1M

2

I

F2

H11F1M

A2

A3

The linearity of resistance and the low offset voltage of the H11FXM allows the remote tuning or band-switching of active ﬁlters without switching glitches or distortion. This schematic illustrates the concept, with current to the H11F1M IRED’s controlling the ﬁlter’s transfer characteristic.

MULTIPLEXED, OPTICALLY-ISOLATED A/D CONVERSION

H74A1

CALL V1

MSB

DATA

LSB

INPUT

DATA

ACQUISITION

PROCESS CONTROL

LOGIC

SYSTEM

CALL

V

n

H11F1M

V

1

V

2

V

n

H11F1M

A/D

CONVERTER

MSB

LSB

The optical isolation, linearity and low offset voltage of the H11FXM allows the remote multiplexing of low level analog signals from such transducers as thermocouplers, Hall effect devices, strain gauges, etc. to a single A/D converter.

TEST EQUIPMENT - KELVIN CONTACT POLARITY

I

TEST

DEVICE UNDER

TEST

H11F1M

I

F

I

F

H11F1M

I

F

AC

PARAMETER

SENSING

BOARD

B

D

I

F

H11F1M

I

TO

F

A & B FOR

POLARITY 1

C & D FOR

POLARITY 2

In many test equipment designs the auto polarity function uses reed relay contacts to switch the Kelvin Contact polarity. These reeds are normally one of the highest maintenance cost items due to sticking contacts and mechanical problems. The totally solid-State H11FXM eliminates these troubles while providing faster switching.

Package Dimensions

Through Hole 0.4" Lead Spacing

8.13–8.89

64

8.13–8.89

64

H11F1M, H11F2M, H11F3M — Photo FET Optocouplers

6.10–6.60

5.08 (Max.)

3.28–3.53

0.38 (Min.)

(0.86)

1.02–1.78

Pin 1

13

0.41–0.51

0.25–0.36

0.76–1.14

2.54–3.81

2.54 (Bsc)

7.62 (Typ.)

15° (Typ.)

Surface Mount

64

8.13–8.89

0.20–0.30

6.10–6.60

5.08 (Max.)

3.28–3.53

0.38 (Min.)

(0.86)

1.02–1.78

Pin 1

13

0.41–0.51

(1.78)

0.25–0.36

0.76–1.14

2.54–3.81

2.54 (Bsc)

(1.52)

0.20–0.30

10.16–10.80

(2.54)

(0.76)

8.43–9.90

6.10–6.60

Pin 1

(7.49)

(10.54)

13

Rcommended Pad Layout

0.25–0.36

3.28–3.53

5.08

(Max.)

0.38 (Min.)

(0.86)

1.02–1.78

0.41–0.51

0.76–1.14

2.54 (Bsc)

0.16–0.88

(8.13)

0.20–0.30

Note:

All dimensions in mm.

Ordering Information

Option

No option H11F1M Standard Through Hole Device

S H11F1SM Surface Mount Lead Bend

SR2 H11F1SR2M Surface Mount; Tape and Reel

V H11F1VM IEC60747-5-2 approval

TV H11F1TVM IEC60747-5-2 approval, 0.4" Lead Spacing

SV H11F1SVM IEC60747-5-2 approval, Surface Mount

SR2V H11F1SR2VM IEC60747-5-2 approval, Surface Mount, Tape and Reel

Marking Information

Order Entry Identiﬁer

(Example) Description

H11F1M, H11F2M, H11F3M — Photo FET Optocouplers

H11F1

V X YY Q

43

Deﬁnitions

1 Fairchild logo

2 Device number

VDE mark (Note: Only appears on parts ordered with VDE

3

option – See order entry table)

4 One digit year code, e.g., ‘7’

5 Two digit work week ranging from ‘01’ to ‘53’

6 Assembly package code

5

1

2

6

Carrier Tape Specification

4.5 ± 0.20

0.30 ± 0.05

21.0 ± 0.1

0.1 MAX

User Direction of Feed

4.0 ± 0.1

10.1 ± 0.20

12.0 ± 0.1

2.0 ± 0.05

1.5 MIN

Ø

11.5 ± 1.0

9.1 ± 0.20

1.5 ± 0.1/-0

Ø

H11F1M, H11F2M, H11F3M — Photo FET Optocouplers

1.75 ± 0.10

24.0 ± 0.3

Reﬂow Proﬁle

H11F1M, H11F2M, H11F3M — Photo FET Optocouplers

Max. Ramp-up Rate = 3°C/S

Max. Ramp-down Rate = 6°C/S

Ts ma x

Preheat Area

Ts mi n

t

L

t

s

260

240

220

200

180

160

140

120

T

P

T

L

100

80

60

Temperature (°C)

40

20

0

120

240 360

Time 25°C to Peak

Time (seconds)

Proﬁle Freature Pb-Free Assembly Proﬁle

Temperature Min. (Tsmin) 150°C

Temperature Max. (Tsmax) 200°C

Time (t

Ramp-up Rate (t

Liquidous Temperature (T

Time (t

Peak Body Package Temperature 260°C +0°C / –5°C

Time (t

Ramp-down Rate (T

Time 25°C to Peak Temperature 8 minutes max.

) from (Tsmin to Tsmax) 60–120 seconds

S

to tP) 3°C/second max.

L

) 217°C

L

) Maintained Above (TL) 60–150 seconds

L

) within 5°C of 260°C 30 seconds

P

to TL) 6°C/second max.

P

t

P

H11F1M, H11F2M, H11F3M — Photo FET Optocouplers

Fairchild H11F1M service manual

Specifications and Main Features

Frequently Asked Questions

User Manual