Fairchild H11AV1-M, H11AV1A-M, H11AV2-M, H11AV2A-M service manual
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers
September 2009
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM
Phototransistor Optocouplers
Features
■
H11AV1M and H11AV2M feature 0.3" input-output
lead spacing
■
H11AV1AM and H11AV2AM feature 0.4" input-output
lead spacing
UL recognized (File #E90700, Vol. 2)
■
■
VDE recognized (File #102497)
Add option V (e.g., H11AV1AVM)
■
Description
The general purpose optocouplers consist of a gallium
arsenide infrared emitting diode driving a silicon
phototransistor in a 6-pin dual in-line white package.
Applications
Power supply regulators
■
■
Digital logic inputs
Microprocessor inputs
■
Schematic Package Outlines
ANODE
CATHODE
1
2
6
BASE
5
COLLECTOR
H11AV1SM, H11AV2SM
3
N/C
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2
4
EMITTER
H11AV1M, H11AV2M
H11AV1AM, H11AV2AM
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers
Absolute Maximum Ratings
(T
= 25°C unless otherwise specified.)
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameter Value Units
TOTAL DEVICE
T
STG
T
OPR
T
SOL
P
D
EMITTER
I
F
V
R
P
D
DETECTOR
V
CEO
V
CBO
V
ECO
P
D
Storage Temperature -40 to +150 °C
Operating Temperature -40 to +100 °C
Wave Solder Temperature (see page 8 for reflow solder profiles) 260 for 10 sec °C
Total Device Power Dissipation @ T
Derate above 25°C
= 25°C
A
250 mW
2.94 mW/°C
DC / Average Forward Input Current 60 mA
Reverse Input Voltage 6 V
LED Power Dissipation @ T
Derate above 25°C
= 25°C
A
120 mW
1.41 mW/°C
Collector-Emitter Voltage 70 V
Collector-Base Voltage 70 V
Emitter-Collector Voltage 7 V
Detector Power Dissipation @ T
Derate above 25°C
= 25°C
A
150 mW
1.76 mW/°C
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 2
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers
Electrical Characteristics
(T
= 25°C unless otherwise specified.)
A
Individual Component Characteristics
Symbol Parameter Test Conditions Min. Typ.* Max. Unit
EMITTER
V
I
R
Input Forward Voltage (I
F
= 10mA) T
F
Reverse Leakage Current V
= 25°C 0.8 1.18 1.5 V
A
T
= -55°C 0.9 1.28 1.7
A
T
= 100°C 0.7 1.05 1.4
A
= 6.0V 10 µA
R
DETECTOR
BV
BV
BV
I
CEO
I
CBO
C
CEO
CBO
ECO
CE
Collector-Emitter Breakdown Voltage I
Collector-Base Breakdown Voltage I
Emitter-Collector Breakdown Voltage I
Collector-Emitter Dark Current V
Collector-Base Dark Current V
Capacitance V
= 1.0mA, I
C
= 100µA, I
C
= 100µA, I
E
= 10V, I
CE
= 10V 0.5 nA
CB
= 0V, f = 1MHz 8 pF
CE
= 0 70 100 V
F
= 0 70 120 V
F
= 0 7 10 V
F
= 0 1 50 nA
F
Transfer Characteristics
Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit
DC CHARACTERISTIC
CTR Current Transfer Ratio,
Collector to Emitter
V
CE (SAT)
Collector-Emitter
Saturation Voltage
AC CHARACTERISTIC
T
Non-Saturated Turn-on
ON
Time
T
Non Saturated Turn-off
ON
Time
I
= 10mA, V
F
I
= 2mA, I
C
I
= 2mA, V
C
R
= 100 Ω (Fig. 11)
L
I
= 2mA, V
C
R
= 100 Ω (Fig. 11)
L
F
CC
CC
= 10V H11AV1M
CE
100 300 %
H11AV1AM
H11AV2M
50
H11AV2AM
= 20mA All 0.4 V
= 10V,
= 10V,
All 15 µs
All 15 µs
Isolation Characteristics
Symbol Parameters Test Conditions Min. Typ.* Max. Units
V
ISO
C
ISO
R
ISO
*Typical values at T
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 3
Input-Output Isolation Voltage f = 60Hz, t = 1 sec. 7500 V
Isolation Capacitance V
Isolation Resistance V
= 25°C
A
= 0V, f = 1MHz 0.2 2 pF
I-O
= 500 VDC 10
I-O
11
AC(pk)
Ω
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