Fairchild H11AV1-M, H11AV1A-M, H11AV2-M, H11AV2A-M service manual

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers

September 2009

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Phototransistor Optocouplers

Features

■

H11AV1M and H11AV2M feature 0.3" input-output lead spacing

■

H11AV1AM and H11AV2AM feature 0.4" input-output lead spacing

UL recognized (File #E90700, Vol. 2)

■

VDE recognized (File #102497) Add option V (e.g., H11AV1AVM)

■

Description

The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line white package.

Applications

Power supply regulators

■

Digital logic inputs Microprocessor inputs

■

Schematic Package Outlines

ANODE

CATHODE

1

2

6

BASE

5

COLLECTOR

H11AV1SM, H11AV2SM

3

N/C

4

EMITTER

H11AV1M, H11AV2M

H11AV1AM, H11AV2AM

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers

Absolute Maximum Ratings

(T

= 25°C unless otherwise specified.)

A

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.

Symbol Parameter Value Units

TOTAL DEVICE

T

STG

T

OPR

T

SOL

P

D

EMITTER

I

F

V

R

P

D

DETECTOR

V

CEO

V

CBO

V

ECO

P

D

Storage Temperature -40 to +150 °C Operating Temperature -40 to +100 °C Wave Solder Temperature (see page 8 for reﬂow solder proﬁles) 260 for 10 sec °C Total Device Power Dissipation @ T

Derate above 25°C

= 25°C

A

250 mW

2.94 mW/°C

DC / Average Forward Input Current 60 mA Reverse Input Voltage 6 V LED Power Dissipation @ T

Derate above 25°C

= 25°C

A

120 mW

1.41 mW/°C

Collector-Emitter Voltage 70 V Collector-Base Voltage 70 V Emitter-Collector Voltage 7 V Detector Power Dissipation @ T

Derate above 25°C

= 25°C

A

150 mW

1.76 mW/°C

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers

Electrical Characteristics

(T

= 25°C unless otherwise speciﬁed.)

A

Individual Component Characteristics

Symbol Parameter Test Conditions Min. Typ.* Max. Unit

EMITTER

V

I

R

Input Forward Voltage (I

F

= 10mA) T

F

Reverse Leakage Current V

= 25°C 0.8 1.18 1.5 V

A

T

= -55°C 0.9 1.28 1.7

A

T

= 100°C 0.7 1.05 1.4

A

= 6.0V 10 µA

R

DETECTOR

BV BV BV

I

CEO

I

CBO

C

CEO

CBO

ECO

CE

Collector-Emitter Breakdown Voltage I Collector-Base Breakdown Voltage I Emitter-Collector Breakdown Voltage I Collector-Emitter Dark Current V Collector-Base Dark Current V Capacitance V

= 1.0mA, I

C

= 100µA, I

C

= 100µA, I

E

= 10V, I

CE

= 10V 0.5 nA

CB

= 0V, f = 1MHz 8 pF

CE

= 0 70 100 V

F

= 0 70 120 V

F

= 0 7 10 V

F

= 0 1 50 nA

F

Transfer Characteristics

Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit

DC CHARACTERISTIC

CTR Current Transfer Ratio,

Collector to Emitter

V

CE (SAT)

Collector-Emitter Saturation Voltage

AC CHARACTERISTIC

T

Non-Saturated Turn-on

ON

Time

T

Non Saturated Turn-off

ON

Time

I

= 10mA, V

F

I

= 2mA, I

C

I

= 2mA, V

C

R

= 100 Ω (Fig. 11)

L

I

= 2mA, V

C

R

= 100 Ω (Fig. 11)

L

F

CC

= 10V H11AV1M

CE

100 300 %

H11AV1AM

H11AV2M

50

H11AV2AM

= 20mA All 0.4 V

= 10V,

All 15 µs

Isolation Characteristics

Symbol Parameters Test Conditions Min. Typ.* Max. Units

V

ISO

C

ISO

R

ISO

*Typical values at T

Input-Output Isolation Voltage f = 60Hz, t = 1 sec. 7500 V Isolation Capacitance V Isolation Resistance V

= 25°C

A

= 0V, f = 1MHz 0.2 2 pF

I-O

= 500 VDC 10

I-O

11

AC(pk)

Ω

Safety and Insulation Ratings

As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.

Symbol Parameter Min. Typ. Max. Unit

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers

Installation Classiﬁcations per DIN VDE 0110/1.89

Ta ble 1 For Rated Main Voltage < 150Vrms I-IV For Rated Main voltage < 300Vrms I-IV Climatic Classiﬁcation 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2

CTI Comparative Tracking Index 175

V

PR

Input to Output Test Voltage, Method b,

V

x 1.875 = V

IORM

, 100% Production Test

PR

1594 V

peak

with tm = 1 sec, Partial Discharge < 5pC

Input to Output Test Voltage, Method a,

V

IORM

x 1.5 = V

, Type and Sample Test

PR

1275 V

peak

with tm = 60 sec, Partial Discharge < 5pC

V

IORM

V

IOTM

Max. Working Insulation Voltage 850 V

Highest Allowable Over Voltage 6000 V

peak

External Creepage 7 mm External Clearance 7 mm

Insulation Thickness 0.5 mm

RIO Insulation Resistance at Ts, V

= 500V 10

IO

9

Ω

Typical Performance Curves

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers

Fig. 1 LED Forward Voltage vs. Forward Current

1.8

1.7

1.6

1.5

1.4

1.3

– FORWARD VOLTAGE (V)

F

1.2

V

1.1

1.0 110100

= -55°C

T

A

TA = 25°C

T

= 100°C

A

IF – LED FORWARD CURRENT (mA)

Fig. 3 Normalized CTR vs. Ambient Temperature

1.4

1.2

1.0

0.8

= 10mA

= 25°C

A

I

F

0.6

NORMALIZED CTR

0.4

0.2

Normalized to I

F

T

-60 -40 -20 0 20 40 60 80 100

–

T

AMBIENT TEMPERATURE (°C)

A

I

= 10mA

F

= 20mA

IF = 5mA

Fig. 2 Normalized CTR vs. Forward Current

1.6

1.4

VCE = 5.0V

= 25°C

T

A

Normalized to

= 10mA

I

F

1.2

1.0

0.8

0.6

NORMALIZED CTR

0.4

0.2

0.0 02468101214161820

IF – FORWARD CURRENT (mA)

Fig. 4 CTR vs. RBE (Unsaturated)

1.0

)

0.9

= 20mA

I

F

0.8

RBE(OPEN)

0.7

/ CTR

0.6

RBE

0.5

0.4

0.3

0.2

0.1

0.0

NORMALIZED CTR ( CTR

10 100 1000

I

= 10mA

F

R

– BASE RESISTANCE (kΩ)

BE

I

= 5mA

F

V

= 5.0V

CE

Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current

100

= 25

˚C

T

A

10

1

1.0

)

0.9

0.8

RBE(OPEN)

0.7

/ CTR

0.6

RBE

Fig. 5 CTR vs. RBE (Saturated)

IF = 20mA

= 5mA

I

F

= 0.3 V

V

CE

0.5

I

= 10mA

0.4

F

0.3

0.2

0.1

NORMALIZED CTR ( CTR

0.0

10 100 1000

RBE- BASE RESISTANCE (kΩ)

0.1

0.01

- COLLECTOR-EMITTER SATURATION VOLTAGE (V)

0.001

0.01 0.1 1 10

CE (SAT)

V

IF = 2.5mA

IF = 5mA

IF = 10mA

IC - COLLECTOR CURRENT (mA)

IF = 20mA

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers

Typical Performance Curves

1000

100

µs)

10

1

SWITCHING SPEED - (

0.1

1.4

1.3

)

1.2

1.1

off(open)

1.0

/ t

)

BE

0.9

off(R

0.8

- (t

0.7

off

0.6

0.5

0.4

0.3

NORMALIZED t

0.2

0.1

Fig. 7 Switching Speed vs. Load Resistor

IF = 10 mA

= 10 V

V

CC

= 25°C

T

A

T

off

0.1 1 10 100

R – LOAD RESISTOR (kΩ)

Fig. 9 Normalized t

10 100 1000 10000 100000

RBE – BASE RESISTANCE (k Ω)

T

f

T

on

T

r

vs. R

off

(Continued)

BE

V

10V

CC =

= 2mA

I

C

= 100Ω

R

L

5.0

Fig. 8 Normalized ton vs. R

4.5

)

4.0

on(open)

/ t

3.5

)

BE

3.0

on(R

- (t

2.5

on

2.0

1.5

NORMALIZED t

1.0

0.5 10 100 1000 10000 100000

BE

RBE – BASE RESISTANCE (k Ω)

Fig. 10 Dark Current vs. Ambient Temperature

10000

VCE = 10 V

= 25°

C

T

A

1000

100

10

1

0.1

- COLLECTOR -EMITTER DARK CURRENT (nA)

0.01

CEO

I

0.001 020406080100

TA – AMBIENT TEMPERATURE

(°C)

V

CC =

= 2mA

I

C

R

= 100Ω

L

10V

TEST CIRCUIT

V

= 10V

CC

WAVE FORMS

INPUT PULSE

I

C

R

L

OUTPUT

I

Adjust

F to produce IC = 2 mA

10%

90%

OUTPUT PULSE

t

r

t

on

t

f

t

off

INPUT

I

F

R

BE

Figure 11. Switching Time Test Circuit and Waveforms

Package Dimensions

Through Hole 0.4" Lead Spacing

8.13–8.89

64

8.13–8.89

64

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers

6.10–6.60

5.08 (Max.)

3.28–3.53

0.38 (Min.)

(0.86)

1.02–1.78

Pin 1

13

0.41–0.51

0.25–0.36

0.76–1.14

2.54–3.81

2.54 (Bsc)

7.62 (Typ.)

15° (Typ.)

Surface Mount

64

8.13–8.89

0.20–0.30

6.10–6.60

5.08 (Max.)

3.28–3.53

0.38 (Min.)

(0.86)

1.02–1.78

Pin 1

13

0.41–0.51

(1.78)

0.25–0.36

0.76–1.14

2.54–3.81

2.54 (Bsc)

(1.52)

0.20–0.30

10.16–10.80

(2.54)

(0.76)

8.43–9.90

6.10–6.60

Pin 1

(7.49)

(10.54)

13

Rcommended Pad Layout

0.25–0.36

3.28–3.53

5.08

(Max.)

0.38 (Min.)

(0.86)

1.02–1.78

0.41–0.51

0.76–1.14

2.54 (Bsc)

0.16–0.88

(8.13)

0.20–0.30

Note:

All dimensions in mm.

Ordering Information

Option

No option H11AV1M Standard Through Hole Device

S H11AV1SM Surface Mount Lead Bend

SR2 H11AV1SR2M Surface Mount; Tape and Reel

T H11AV1TM 0.4" Lead Spacing

V H11AV1VM VDE 0884 TV H11AV1TVM VDE 0884, 0.4" Lead Spacing SV H11AV1SVM VDE 0884, Surface Mount

SR2V H11AV1SR2VM VDE 0884, Surface Mount, Tape and Reel

Marking Information

Order Entry Identiﬁer

(Example) Description

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers

1

H11AV1

V X YY

43

Q

5

2

6

Deﬁnitions

1Fairchild logo 2Device number

VDE mark (Note: Only appears on parts ordered with VDE

3

option – See order entry table) 4 One digit year code, e.g., ‘3’ 5Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code

*Note – Parts that do not have the ‘V’ option (see definition 3 above) that are marked with date code ‘325’ or earlier are marked in portrait format.

Tape Dimensions

4.5 ± 0.20

21.0 ± 0.1

0.30 ± 0.05

4.0 ± 0.1

12.0 ± 0.1

2.0 ± 0.05

Ø1.5 MIN

11.5 ± 1.0

9.1 ± 0.20

1.75 ± 0.10

24.0 ± 0.3

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers

0.1 MAX

User Direction of Feed

Note:

All dimensions are in millimeters.

Reflow Soldering Profile

300 280 260 240 220 200 180 160

°C

140 120 100

80 60 40 20

0

0 60 180120 270

10.1 ± 0.20

1.822°C/Sec Ramp up rate

33 Sec

Time (s)

Ø1.5 ± 0.1/-0

260°C

>245°C = 42 Sec

Time above

183°C = 90 Sec

360

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Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™

CROSSVOLT™

CTL™ Current Transfer Logic™ EcoSPARK EfficentMax™ EZSWITCH™*

®

™*

®

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®

FACT

®

FAST

®

F-PFS™

®

FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC OPTOPLANAR

®

FastvCore™ FETBench™ FlashWriter FPS™

®

*

PDP SPM™ Power-SPM™

PowerTrench

SM

PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET™

®

SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™

®

ThePower Franchise

TinyBoost™ TinyBuck™

®

TinyLogic

®

TINYOPTO™

™

TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™

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TRUECURRENT™* µSerDes™

®

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™

®

*

XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTORRESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANYPRODUCTS HEREIN TO IMPROVE RELIABILITY,FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OFTHE APPLICATION OR USE OF ANY PRODUCTOR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DONOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICHCOVERS THESE PRODUCTS.

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failedapplications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technicalandproduct information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary

First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I40

Fairchild H11AV1-M, H11AV1A-M, H11AV2-M, H11AV2A-M service manual

Specifications and Main Features

Frequently Asked Questions

User Manual