Fairchild H11AA814, H11A617, H11A817 service manual
查询H11A617供应商
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES H11A617 SERIES H11A817 SERIES
PACKAGE
4
1
DESCRIPTION
The H11AA814 Series consists of two gallium arsenide infrared emitting diodes,
connected in inverse parallel, driving a single silicon phototransistor in a 4-pin
dual in-line package.
The H11A617 and H11A817 Series consists of a gallium arsenide infrared
emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
FEATURES
• Compact 4-pin package
• Current transfer ratio in selected groups:
H11AA814: 20-300% H11A817: 50-600%
H11AA814A: 50-150% H11A817A: 80-160%
H11A617A: 40%-80% H11A817B: 130-260%
H11A617B: 63%-125% H11A817C: 200-400%
H11A617C: 100%-200% H11A817D: 300-600%
H11A617D: 160%-320%
• Minimum BV
of 70V guaranteed
CEO
H11AA814 SCHEMATIC
1
2
4
COLLECTOR
3 EMITTER
H11A617 & H11A817 SCHEMATIC
CATHODE
1
2
4
COLLECTORANODE
3EMITTER
APPLICATIONS
H11AA814 Series
•AC line monitor
• Unknown polarity DC sensor
•Telephone line interface
H11A617 and H11A817 Series
•Power supply regulators
• Digital logic inputs
• Microprocessor inputs
© 2003 Fairchild Semiconductor Corporation
Page 1 of 9
4/24/03
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES H11A617 SERIES H11A817 SERIES
Parameter Symbol Device Value Units
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation (-55°C to 50 °C)
EMITTER
Continuous Forward Current
Reverse Voltage
Forward Current - Peak (1 µs pulse, 300 pps)
LED Power Dissipation (25°C ambient)
Derate above 25°C
DETECTOR
Collector-Emitter Voltage
Emitter-Collector Voltage
Continuous Collector Current
Detector Power Dissipation (25°C ambient)
Derate above 25°C
T
T
T
I
V
V
P
V
F
P
P
STG
OPR
SOL
D
I
F
R
(pk)
D
CEO
ECO
I
C
D
H11A817/A/B/C/D
H11A817/A/B/C/D
All -55 to +150 °C
All -55 to +100 °C
All 260 for 10 sec °C
All 200 mW
All 50 mA
H11A617A/B/C/D
6
5
All 1.0 A
All
100 mW
1.33 mW/°C
All 70 V
H11AA814/A
H11A617A/B/C/D
6
7
6
All 50 mA
All
150 mW
2.0 mW/°C
V
V
(T
ELECTRICAL CHARACTERISTICS
= 25°C Unless otherwise specified.)
A
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter Test Conditions Symbol Device Min Typ* Max Unit
(I
EMITTER
Input Forward Voltage
Reverse Leakage Current
DETECTOR
Collector-Emitter Breakdown
Voltage
Emitter-Collector Breakdown
Voltage
Collector-Emitter Dark Current
Collector-Emitter Capacitance
*Typical values at T
© 2003 Fairchild Semiconductor Corporation
= 25°C.
A
(V
(I
C
(I
E
(V
CE
= 60 mA)
F
(I
= 20 mA)
F
(I
= ±20 mA)
F
(V
= 6.0 V)
R
(V
= 5.0 V)
R
= 1.0 mA, I
= 100 µA, I
= 10V, I
CE
= 0) BV
F
= 0) BV
F
= 0) I
F
= 0 V, f = 1 MHz) C
V
F
I
R
CEO
ECO
H11AA814/A, H11A817/A/B/C/D,
CEO
CE
Page 2 of 9
H11A617A/B/C/D 1.35 1.65
H11A817/A/B/C/D 1.2 1.5
H11AA814/A 1.2 1.5
H11A617A/B/C/D
H11A817/A/B/C/D
.001 10 µA
ALL 70 100 V
H11AA814/A 6
10 VH11A617A/B/C/D 7
H11A817/A/B/C/D 6
H11A617C/D
100
1
H11A617A/B 50
ALL 8 pF
4/24/03
V
nA
Ω
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES H11A617 SERIES H11A817 SERIES
TRANSFER CHARACTERISTICS
(T
= 25°C Unless otherwise specified.)
A
DC Characteristic Test Conditions Symbol Device Min Typ* Max Unit
(I
= ±1 mA, V
F
(I
= ±1 mA, V
F
= 5 V) (note 1)
CE
= 5 V) (note 1)
CE
H11AA814 20 300 %
H11AA814A 50 150 %
H11A617A 40 80 %
= 10 mA, V
(I
F
= 5 V) (note 1)
CE
H11A617B 63 125 %
H11A617C 100 200 %
H11A617D 160 320 %
Current Transfer
Ratio
= 5 mA, V
(I
F
= 5 V) (note 1)
CE
CTR
H11A817 50 600 %
H11A817A 80 160 %
H11A817B 130 260 %
H11A817C 200 400 %
H11A817D 300 600 %
H11A617A 13 %
= 1 mA, V
(I
F
= 5 V) (note 1)
CE
H11A617B 22 %
H11A617C 34 %
H11A617D 56 %
Collector-Emitter
Saturation Voltage
= 1 mA, I
(I
C
(I
= 2.5 mA, I
C
= 1 mA, I
(I
C
= ±20 mA)
F
= 10 mA)
F
= 20 mA)
F
V
CE (SAT)
H11AA814/A 0.2
VH11A617A/B/C/D 0.4
H11A817/A/B/C/D 0.2
AC Characteristic
Rise Time
Fall Time
= 2 mA, V
(I
C
(I
= 2 mA, V
C
= 2 V, R
CE
= 2 V, R
CE
= 100V) (note 2) t
L
= 100V) (note 2) t
L
r
f
ALL 2.4 18 µs
ALL 2.4 18 µs
ISOLATION CHARACTERISTICS
Characteristic Test Conditions Symbol Min Typ* Max Units
Input-Output Isolation Voltage (note 3) f = 60Hz, t = 1 min
(V
Isolation Resistance
Isolation Capacitance
*Typical values at T
= 25°C.
A
NOTES
1. Current Transfer Ratio (CTR) = I
/I
C
F
x 100%.
2. For test circuit setup and waveforms, refer to Figure 8.
3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
© 2003 Fairchild Semiconductor Corporation
= 500 VDC) R
I-O
(V
= 0, f = 1 MHz) C
I-O
Page 3 of 9
V
ISO
ISO
ISO
5300 Vac(rms)
11
10
0.5 pf
4/24/03
Loading...